Abstract: Light-emitting devices including solid-state light-emitting devices, light-emitting diode (LED) devices, and LED packages with support elements for improved near-field and far-field emissions are disclosed. LED chips may be mounted to support elements in a manner that directs light through the support elements in desired emission directions. Support elements include optical structures that spread and mix light laterally within the support element. Optical structures include interior mixing chambers bounded by light-altering layers, such as light-diffusing layers or light-reflective layers, that effectively increase internal reflections within the mixing chambers for lateral spreading of light. Support elements as described may be well suited for low profile LED devices where device heights are less than or equal to device widths.

Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Abstract: A light emitting diode (LED) component comprises an LED comprising a dominant wavelength in a range of from about 425 nm to about 475 nm, and a phosphor composition in optical communication with the LED. The phosphor composition comprises a primary phase and one or more additional phases. An emission spectrum of the phosphor composition has a peak emission wavelength of between about 640 nm and about 670 nm and a FWHM of between about 40 nm and 65 nm. An x-ray diffraction pattern of the phosphor composition comprises a first intensity peak corresponding to the one or more additional phases at a 2-theta value of from about 26.5° to about 26.8°.

Abstract: Light emitting devices include a blue LED that emits blue light having a peak wavelength between 430 nanometers and 480 nanometers and a recipient luminophoric medium that includes luminescent materials that down-convert a portion of the blue light emitted by the blue LED to light having a peak wavelength that is between about 500 nanometers and about 545 nanometers. The combination of the blue light emitted by the blue LED and the light emitted by the luminescent materials in the recipient luminophoric medium comprises light that is perceived as blue light having a color point that falls within the region on the 1931 CIE Chromaticity Diagram defined by ccx, ccy chromaticity coordinates of (0.1355, 0.0399), (0.175, 0.0985), (0.1743 0.1581), (0.1096, 0.0868), (0.1355, 0.0399).

Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.