Abstract: An organometallic compound represented by Formula 1 emits deep blue light. A light-emitting device including the organometallic compound, and an electronic apparatus including the light-emitting device may have excellent or suitable driving voltage, luminescence efficiency, color conversion efficiency, and/or lifespan characteristics: In Formula 1, X1 to X4 are each independently C or N, Y11 is C(Z11) or N, and Y12 is C(Z12) or N.

Abstract: Disclosed is a liquid crystal composition including at least one compound selected from the group consisting of a liquid crystal compound expressed by Formula 1-1 and a liquid crystal compound expressed by Formula 1-2; at least one compound selected from the group consisting of a self-alignment compound expressed by Formula 2-1 and a self-alignment compound expressed by Formula 2-2; and at least one compound selected from the group consisting of a reactive mesogen expressed by Formula 3-1, a reactive mesogen expressed by Formula 3-2, a reactive mesogen expressed by Formula 3-3, a reactive mesogen expressed by Formula 3-4, and a reactive mesogen expressed by Formula 3-5. The liquid crystal composition also has negative dielectric anisotropy.

Abstract: Disclosed is a liquid crystal composition including at least one compound selected from the group consisting of a liquid crystal compound expressed by Formula 1-1 and a liquid crystal compound expressed by Formula 1-2; at least one compound selected from the group consisting of a self-alignment compound expressed by Formula 2-1 and a self-alignment compound expressed by Formula 2-2; and at least one compound selected from the group consisting of a reactive mesogen expressed by Formula 3-1, a reactive mesogen expressed by Formula 3-2, a reactive mesogen expressed by Formula 3-3, a reactive mesogen expressed by Formula 3-4, and a reactive mesogen expressed by Formula 3-5. The liquid crystal composition also has negative dielectric anisotropy.

Abstract: An oxide semiconductor includes zinc (Zn), tin (Sn), and at least one of Ag and Au.

Abstract: An oxide semiconductor includes zinc (Zn), tin (Sn), and at least one of Ag and Au.

Abstract: According to an aspect of the present invention, there is provided a back plane for a flat-panel display device and a method of manufacturing the same. The back plane including: a substrate; a gate electrode on the substrate; a first insulation layer on the substrate and covering the gate electrode; a semiconductor layer on the first insulation layer and corresponding to the gate electrode; and a source electrode and a drain electrode on the semiconductor layer and electrically coupled to respective portions of the semiconductor layer. Here, the semiconductor layer includes indium, tin, zinc, and gallium, and an atomic concentration of the gallium is from about 5% to about 15%.