Patents by Inventor Ill Choi

Ill Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same
    Publication number: 20050120944
    Abstract: The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.
    Type: Application
    Filed: December 1, 2004
    Publication date: June 9, 2005
    Inventors: Young Hong, Ill Choi, Sang Kim, Man Kwak, Hong Lee