Patents by Inventor Ill Kyoo Park

Ill Kyoo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9183978
    Abstract: The present invention discloses a filter for removing noise, which includes: a lower magnetic body; primary and secondary patterns spirally provided on the lower magnetic body in parallel to each other; an insulating layer for covering the primary and secondary patterns; and an upper magnetic body provided on the insulating layer, wherein the primary and secondary patterns are formed to have a ratio of vertical thickness (T) to horizontal width (W) of 0.27?T/W?2.4. According to the present invention, it is possible to improve performance and capacity by implementing high common-mode impedance in the same frequency and reduce manufacturing costs by simplifying structures and processes.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: November 10, 2015
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Young Ghyu Ahn, Sung Kwon Wi, Dong Seok Park, Yong Suk Kim, Ill Kyoo Park, Young Seuck Yoo, Sang Soo Park
  • Publication number: 20140104027
    Abstract: The present invention discloses a filter for removing noise, which includes: a lower magnetic body; primary and secondary patterns spirally provided on the lower magnetic body in parallel to each other; an insulating layer for covering the primary and secondary patterns; and an upper magnetic body provided on the insulating layer, wherein the primary and secondary patterns are formed to have a ratio of vertical thickness (T) to horizontal width (W) of 0.27?T/W?2.4. According to the present invention, it is possible to improve performance and capacity by implementing high common-mode impedance in the same frequency and reduce manufacturing costs by simplifying structures and processes.
    Type: Application
    Filed: August 7, 2013
    Publication date: April 17, 2014
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Young Ghyu AHN, Sung Kwon Wi, Dong Seok Park, Yong Suk Kim, Ill Kyoo Park, Young Seuck Yoo, Sang Soo Park
  • Patent number: 8295031
    Abstract: There is provided an electric double layer capacitor including: an exterior case having a housing space provided therein and formed of insulating resin; first and second external terminals buried in the exterior case, each having a first surface exposed to the housing space and a second surface exposed to an outside of the exterior case; and a chip-type electric double layer capacitor cell disposed in the housing space and electrically connected to the first surface. The chip-type electric double layer capacitor cell includes first and second electrodes facing each other and having electricity of opposite polarities applied thereto, at least one induction electrode layer disposed between the first and second electrodes and having no electricity applied thereto, and first and second separators disposed between the first electrode and the induction electrode layer and between the second electrode and the induction electrode layer, respectively.
    Type: Grant
    Filed: August 18, 2010
    Date of Patent: October 23, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang Kyun Lee, Ill Kyoo Park, Seung Heon Han, Jung Eun Noh
  • Patent number: 8264301
    Abstract: There are provided a modeling circuit of a high-frequency device capable of providing a more accurate modeling circuit having a higher-order resonance by dividedly modeling an overlap zone and a non-overlap zone of the high-frequency device, and a modeling method thereof.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: September 11, 2012
    Assignees: Samsung Electro-Mechanics Co., Ltd., Industry-University Cooperation Foundation Hanyang University
    Inventors: Ill Kyoo Park, Chan Seo Park, Myoung Gyun Kim, Tae Yeoul Yun, Zhe Jun Jin, Hyuk Sun, Young Duk Yoo
  • Patent number: 8254084
    Abstract: The present invention provides a chip type electric double layer capacitor including: a lower case having an internal space of which an upper surface is opened and an external terminal of which portions exposed to a bottom of the internal space and the outside are connected to each other; an electric double layer capacitor cell disposed in the internal space of the lower case to be electrically connected to the portion of the external terminal, which is exposed to the bottom of the internal space; and an upper cap mounted on the lower case to cover the internal space, and a method for manufacturing the same.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: August 28, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Dong Sup Park, Ill Kyoo Park, Chang Ryul Jung, Sang Kyun Lee, Yeong Su Cho, Sung Ho Lee
  • Publication number: 20110170235
    Abstract: There is provided an electric double layer capacitor including: an exterior case having a housing space provided therein and formed of insulating resin; first and second external terminals buried in the exterior case, each having a first surface exposed to the housing space and a second surface exposed to an outside of the exterior case; and a chip-type electric double layer capacitor cell disposed in the housing space and electrically connected to the first surface. The chip-type electric double layer capacitor cell includes first and second electrodes facing each other and having electricity of opposite polarities applied thereto, at least one induction electrode layer disposed between the first and second electrodes and having no electricity applied thereto, and first and second separators disposed between the first electrode and the induction electrode layer and between the second electrode and the induction electrode layer, respectively.
    Type: Application
    Filed: August 18, 2010
    Publication date: July 14, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Sang Kyun LEE, Ill Kyoo PARK, Seung Heon HAN, Jung Eun NOH
  • Publication number: 20110085283
    Abstract: The present invention provides a chip type electric double layer capacitor including: a lower case having an internal space of which an upper surface is opened and an external terminal of which portions exposed to a bottom of the internal space and the outside are connected to each other; an electric double layer capacitor cell disposed in the internal space of the lower case to be electrically connected to the portion of the external terminal, which is exposed to the bottom of the internal space; and an upper cap mounted on the lower case to cover the internal space, and a method for manufacturing the same.
    Type: Application
    Filed: December 18, 2009
    Publication date: April 14, 2011
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Dong Sup Park, Ill Kyoo Park, Chang Ryul Jung, Sang Kyun Lee, Yeong Su Cho, Sung Ho Lee
  • Publication number: 20100161291
    Abstract: There are provided a modeling circuit of a high-frequency device capable of providing a more accurate modeling circuit having a higher-order resonance by dividedly modeling an overlap zone and a non-overlap zone of the high-frequency device, and a modeling method thereof.
    Type: Application
    Filed: August 20, 2009
    Publication date: June 24, 2010
    Applicants: Samsung Electro-Mechanics Co., Ltd., INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Ill Kyoo Park, Chan Seo Park, Myoung Gyun Kim, Tae Yeoul Yun, Jin Zhe Jun, Hyuk Sun, Young Duk Yoo