Patents by Inventor Ill Seo KANG

Ill Seo KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical bipolar transistors
    Patent number: 10665702
    Abstract: A vertical bipolar transistor including a substrate including a first well of a first conductivity type and a second well of a second conductivity type different from the first conductivity type, the first well adjoining the second well, a first fin extending, from the first well, a second fin extending from the first well, a third fin extending from the second well, a first conductive region on the first fin, having the second conductivity type and configured to serve as an emitter of the vertical bipolar transistor, a second conductive region on the second fin, having the first conductivity type, and configured to serve as a base of the vertical bipolar transistor, and a third conductive region on the third fin, having the second conductivity type, and configured to serve as a collector of the vertical bipolar transistor may be provided.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: May 26, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung Gil Kang, Ill Seo Kang, Yong Hee Park, Sang Hoon Baek, Keon Yong Cheon
  • VERTICAL BIPOLAR TRANSISTORS
    Publication number: 20190198648
    Abstract: A vertical bipolar transistor including a substrate including a first well of a first conductivity type and a second well of a second conductivity type different from the first conductivity type, the first well adjoining the second well, a first fin extending, from the first well, a second fin extending from the first well, a third fin extending from the second well, a first conductive region on the first fin, having the second conductivity type and configured to serve as an emitter of the vertical bipolar transistor, a second conductive region on the second fin, having the first conductivity type, and configured to serve as a base of the vertical bipolar transistor, and a third conductive region on the third fin, having the second conductivity type, and configured to serve as a collector of the vertical bipolar transistor may be provided.
    Type: Application
    Filed: October 4, 2018
    Publication date: June 27, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Myung Gil KANG, Ill Seo KANG, Yong Hee PARK, Sang Hoon BAEK, Keon Yong CHEON