Abstract: A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

Abstract: The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.

Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed.

Abstract: Disclosed are a coating material for absorbing radiant heat, forming method thereof, a radiant heat cooling apparatus using the same, and an apparatus for growing a silicon single crystal using the same. The radiant heat absorbing coating material includes 10˜15 wt/% of silica gel, 5˜10 Wt/% of graphite powder, and 75˜85 wt/% of IPA, and is formed by agitation.

Abstract: A silicon single crystal growing apparatus supplemented with a low melting point dopant feeding instrument and a low melting point dopant feeding method thereof for producing a heavily doped silicon single crystal with a dopant of low melting point. The apparatus includes a quartz crucible containing molten silicon liquid, a heating unit supplying the quartz crucible with a radiant heat, a crystal pulling lifter pulling up a silicon single crystal from a molten silicon liquid contained in the quartz crucible, and a low melting point dopant feeding instrument. The low melting point dopant feeding instrument includes a sidewall portion, an upper portion, and an open bottom portion with net-like structure having many holes, the sidewall and upper portions being vacuum-tight sealed and a low melting point dopant being loaded inside the low melting point dopant feeding instrument.

Abstract: Disclosed are a coating material for absorbing radiant heat, forming method thereof, a radiant heat cooling apparatus using the same, and an apparatus for growing a silicon single crystal using the same. The radiant heat absorbing coating material includes 10˜15 wt/% of silica gel, 5˜10 Wt/% of graphite powder, and 75˜85 wt/% of IPA, and is formed by agitation.