Abstract: A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first direction, a phase-changeable pattern provided between the word line and the bit line, a bottom electrode provided between the phase-changeable pattern and the word line, and a spacer provided on a side surface of the bottom electrode and between the phase-changeable pattern and the word line. The bottom electrode may include a first portion and a second portion, and the second portion is provided between the first portion and the spacer. The first and second portions of the bottom electrodes may have different lengths from each other in the second direction.

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes first and second conductive lines, and a variable resistance material and a switching element between the first and second conductive lines. The switching element includes first and second portions that extend and/or face in different first and second directions, respectively. Methods of manufacturing a variable resistance memory device are also provided.