Patents by Inventor Ilona ARGUT

Ilona ARGUT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semipolar semiconductor crystal and method for manufacturing the same
    Patent number: 8536030
    Abstract: A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: September 17, 2013
    Assignee: Freiberger Compund Materials GmbH
    Inventors: Thomas Wunderer, Stephan Schwaiger, Ilona Argut, Rudolph Rosch, Frank Lipski, Ferdinand Scholz
  • SEMIPOLAR SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110227198
    Abstract: A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 22, 2011
    Applicant: FREIBERGER COMPOUND MATERIALS GMBH
    Inventors: Thomas WUNDERER, Stephan SCHWAIGER, Ilona ARGUT, Rudolph ROSCH, Frank LIPSKI, Ferdinand SCHOLZ