Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Abstract: As associative thickener obtainable by free radical polymerization, the preparation thereof and the use thereof in paper coating slips are described. The associative thickener is formed from (a) acid monomers selected from ethylenically unsaturated C3- to C8-carboxylic acids, (b) associative monomers of the general formula H2C?CR1—COO-(EO)n—(PO)m—R2, in which R1 is hydrogen or methyl, n is a number of at least two, m is a number from zero to 50, EO is an ethylene oxide group, PO is a propylene oxide group and R2 is a C8-C30-alkyl group or a C8-C30-alkaryl group, and (c) nonionic, copolymerizable monomers differing from a) and b), the reaction product having been reacted, after the polymerization, with initiators forming nonionic radicals.

Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (a1) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making

Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: Provided is a method for performing a polymerization process in a stirred reactor, wherein a critical time window is determined by means of a monitor of at least one polymerization process parameter and an associated process window, and when a critical time window is present, an adaptation of process conditions is made in order to configure the polymerization process to conform to the process window.

Abstract: An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one kind of functional groups (al) capable of interacting with the metals and/or the metal oxides on top of the surfaces to be polished and forming complexes with the said metals and metal cations, the said polymer particles (A) being preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomer or polymer containing a plurality of functional groups (a1); graft copolymers preparable by the emulsion or suspension polymerization of at least one monomer containing at least one radically polymerizable double bond in the presence of at least one oligomeric or polymeric aminotriazine-polyamine condensate; and a process for the chemical and mechanical polishing of patterned and unstructured metal surfaces making

Abstract: A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start,—an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Abstract: Provided is a method for performing a polymerization process in a stirred reactor, wherein a critical time window is determined by means of a monitor of at least one polymerization process parameter and an associated process window, and when a critical time window is present, an adaptation of process conditions is made in order to configure the polymerization process to conform to the process window.

Abstract: The present invention relates to a method for performing a polymerization process in a stirred reactor, wherein a critical time window is determined by means of a monitor of at least one polymerization process parameter and an associated process window, and when a critical time window is present, an adaptation of process conditions is made in order to configure the polymerization process to conform to the process window.

Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

Abstract: A process for preparing an aqueous polymer dispersion using flush water.

Abstract: As associative thickener obtainable by free radical polymerization, the preparation thereof and the use thereof in paper coating slips are described. The associative thickener is formed from (a) acid monomers selected from ethylenically unsaturated C3- to C8-carboxylic acids, (b) associative monomers of the general formula H2C?CR1—COO(EO)n—(PO)m—R2, in which R1 is hydrogen or methyl, n is a number of at least two, m is a number from zero to 50, EO is an ethylene oxide group, PO is a propylene oxide group and R2 is a C8-C30-alkyl group or a C8-C30-alkaryl group, and (c) nonionic, copolymerizable monomers differing from a) and b), the reaction product having been reacted, after the polymerization, with initiators forming nonionic radicals.

Abstract: A paper coating slip which comprises metal salt pigments in an amount of at least 40 parts by weight, based on the total amount of pigments, and an aqueous dispersion of water-soluble copolymers is described. The copolymers are obtainable by free radical polymerization of ethylenically unsaturated, anionic monomers with ethylenically unsaturated, nonionic monomers in the presence of polymeric stabilizers for water-in-water polymer dispersions. The paper coating slips have good rheological properties and good water retention behavior in the coating of paper or cardboard.

Abstract: A process for preparing an aqueous polymer dispersion using flush water.

Abstract: The present invention relates to a method for performing a polymerization process in a stirred reactor, wherein a critical time window is determined by means of a monitor of at least one polymerization process parameter and an associated process window, and when a critical time window is present, an adaptation of process conditions is made in order to configure the polymerization process to conform to the process window.