Abstract: Method for producing a nanocomposite material reinforced by unidirectionally oriented pre-dispersed alumina nanofibers. The process is suited for industrial-scale production of the nanocomposite materials. The nanocomposite production process involves, synthesis of unidirectionally oriented pre-dispersed alumina nanofibers, casting a mat of pre-dispersed nanofibers with a predetermined orientation in the atmosphere of air or other gas(es) by saturating the nanofibers with liquid polymer matrix. Polymer matrix may include thermosets or/and thermoplastics. The material forming the polymer matrix may be heated to its melting point temperature to transform it to liquid phase. After saturation, the polymer matrix is hardened by lowering its temperature or by means of exposing the polymer matrix to UV radiation, electron beam and/or chemical hardeners. The nanomaterial is composed of polymer composite with homogeneously dispersed uniformly oriented reinforcing nanofibers.

Abstract: Carbon-fiber-reinforced polymers are composite materials. In this case the composite consists of two parts; a matrix and a reinforcement. In CFRP the reinforcement is carbon fiber, which provides the strength. The matrix is usually a polymer resin, such as epoxy, to bind the reinforcements together. Because CFRP consists of two distinct elements, the material properties depend on these two elements. In accordance with one aspect of the invention, there is provided a method and apparatus for producing carbon-fiber-reinforced polymers, wherein the polymer resin used in their manufacture is additionally reinforced by unidirectionally oriented pre-dispersed alumina nanofibers. The aforesaid process is well suited for industrial-scale production of the carbon-fiber-reinforced polymers.

Abstract: A method for producing a nanocomposite material reinforced by alumina Al2O3 nanofibers involving synthesizing the alumina Al2O3 nanofibers directly from a melt comprising molten metallic aluminum, the method comprising a controlled liquid phase oxidation of the melt, wherein the synthesized alumina Al2O3 nanofibers have a diameter between 3 and 45 nm and length of more than 100 nm and combining the synthesized alumina Al2O3 nanofibers with a polymer matrix to produce the nanocomposite material reinforced by the alumina Al2O3 nanofibers. The alumina Al2O3 nanofibers may be monocrystalline alumina Al2O3 nanofibers. The alumina Al2O3 nanofibers and the molecules of the polymer may be aligned.

Abstract: A method and apparatus for producing a cement-based material, such as concrete, mortar and/or grout reinforced by unidirectionally oriented pre-dispersed alumina nanofibers, as well as the resulting material. The aforesaid process is well suited for industrial-scale production of the cement-based composite materials. The resulting nanomaterial is composed of the cement base, various additives and homogeneously dispersed uniformly oriented reinforcing alumina nanofibers. In various embodiments, the aforesaid composite material may be manufactured by means of water-dispersion of the alumina nanofibers and combining the resulting dispersed nanofiber solution with the cement base and, if applicable, one or more additives. Additionally or alternatively, the alumina nanofibers with or without the cement base may be subject to mechanical or/and ultrasound coarse dispersing.

Abstract: Method for producing a nanocomposite material reinforced by unidirectionally oriented pre-dispersed alumina nanofibers. The process is suited for industrial-scale production of the nanocomposite materials. The nanocomposite production process involves, synthesis of unidirectionally oriented pre-dispersed alumina nanofibers, casting a mat of pre-dispersed nanofibers with a predetermined orientation in the atmosphere of air or other gas(es) by saturating the nanofibers with liquid polymer matrix. Polymer matrix may include thermosets or/and thermoplastics. The material forming the polymer matrix may be heated to its melting point temperature to transform it to liquid phase. After saturation, the polymer matrix is hardened by lowering its temperature or by means of exposing the polymer matrix to UV radiation, electron beam and/or chemical hardeners. The nanomaterial is composed of polymer composite with homogeneously dispersed uniformly oriented reinforcing nanofibers.

Abstract: A method for producing a nanocoating reinforced by alumina Al2O3 nanofibers involving synthesizing the alumina Al2O3 nanofibers directly from a melt comprising molten metallic aluminum, the method comprising a controlled liquid phase oxidation of the melt, wherein the synthesized alumina Al2O3 nanofibers have a diameter between 3 and 45 nm and length of more than 100 nm and combining the synthesized alumina Al2O3 nanofibers with a polymer matrix to produce the nanocoating material reinforced by the alumina Al2O3 nanofibers. The nanocoating is then applied onto a surface of a substrate using any known coating technique, such as by means of a roll coater. The alumina Al2O3 nanofibers may be monocrystalline alumina Al2O3 nanofibers. The alumina Al2O3 nanofibers and the molecules of the polymer may be aligned.

Abstract: A method for producing a nanocomposite material reinforced by alumina Al2O3 nanofibers involving synthesizing the alumina Al2O3 nanofibers directly from a melt comprising molten metallic aluminum, the method comprising a controlled liquid phase oxidation of the melt, wherein the synthesized alumina Al2O3 nanofibers have a diameter between 3 and 45 nm and length of more than 100 nm and combining the synthesized alumina Al2O3 nanofibers with a polymer matrix to produce the nanocomposite material reinforced by the alumina Al2O3 nanofibers. The alumina Al2O3 nanofibers may be monocrystalline alumina Al2O3 nanofibers. The alumina Al2O3 nanofibers and the molecules of the polymer may be aligned.

Abstract: A method for producing a nanocoating reinforced by alumina Al2O3 nanofibers involving synthesizing the alumina Al2O3 nanofibers directly from a melt comprising molten metallic aluminum, the method comprising a controlled liquid phase oxidation of the melt, wherein the synthesized alumina Al2O3 nanofibers have a diameter between 3 and 45 nm and length of more than 100 nm and combining the synthesized alumina Al2O3 nanofibers with a polymer matrix to produce the nanocoating material reinforced by the alumina Al2O3 nanofibers. The nanocoating is then applied onto a surface of a substrate using any known coating technique, such as by means of a roll coater. The alumina Al2O3 nanofibers may be monocrystalline alumina Al2O3 nanofibers. The alumina Al2O3 nanofibers and the molecules of the polymer may be aligned.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: Systems and techniques for alignment with latent images. In one implementation, a method includes detecting a location of a latent image on a substrate, repositioning the substrate based on the detected location of the latent image, and patterning the substrate.

Abstract: Systems and techniques for alignment with latent images. In one implementation, a method includes detecting a location of a latent image on a substrate, repositioning the substrate based on the detected location of the latent image, and patterning the substrate.

Abstract: A test mark, as well as methods for forming and using the test mark to facilitate the measurement of the critical dimensions of etched features in semiconductor and other wafer level processing is described. The test marks may be used to characterize, calibrate and/or monitor etch performance. Test marks are defined by imaging (typically at partial exposures) overlapping, angularly offset lines in a resist that covers a layer to be etched. The lines preferably have line widths that are equal (or related) to a critical dimension of interest. After the resist is developed and otherwise processed, the layer is etched as appropriate, thereby creating the test marks. The test marks are then imaged to facilitate the determination of a geometric parameter of each mark. Most commonly, the geometric parameter determined relates to the area of the mark and/or the length of its major dimension.

Abstract: Apparatus for performing measurement of a dimension of a test marked formed by overlapping feature imaged onto a an image forming layer of a semiconductor wafer and the calculation of the critical dimensions of the features from test mark. This is used in semiconductor processing. Also included is software configured to program a measurement device to perform the measurement and calculation of the dimension of a test mark.

Abstract: Variation in position of test marks formed of overlapping exposed features imaged by an imaging structure such as that of a lithography tool are characterized at high speed and with extremely high accuracy by imaging test marks formed in resist or on a target or wafer by a lithographic process, collecting irradiance distribution data and fitting a mathematical function to respective portions or regions of output data corresponding to a test mark of a test mark pattern such as respective maxima or minima regions or other regions of the irradiance distribution data to determine actual location and shift of position of respective patterns of test marks. Metrology fields are formed of patterns of test marks on test wafers or production wafers preferably including a critical dimension exposed at different focus distances and/or illumination conditions to capture position/aberration data for the imaging structure.

Abstract: Variation in position of test marks formed of overlapping exposed features imaged by an imaging structure such as that of a lithography tool are characterized at high speed and with extremely high accuracy by imaging test marks formed in resist or on a target or wafer by a lithographic process, collecting irradiance distribution data and fitting a mathematical function to respective portions or regions of output data corresponding to a test mark of a test mark pattern such as respective maxima or minima regions or other regions of the irradiance distribution data to determine actual location and shift of position of respective patterns of test marks. Metrology fields are formed of patterns of test marks on test wafers or production wafers preferably including a critical dimension exposed at different focus distances and/or illumination conditions to capture position/aberration data for the imaging structure.