Abstract: A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.

Abstract: A phase change memory may be formed by defining a pore in an insulator over a semiconductor substrate. The pore may be filled with a metallic material to form a high resistance heater. A portion of the metallic material may be removed at the upper end of the pore. Thereafter, when the phase change material is deposited, a portion of the phase change material fills the upper end of the pore and the remainder of the phase change material overlies the pore and the insulator. A conductive material may be formed atop the phase change material. As a result, the creation of a parasitic path from a corner of the metallic heater to the overlying conductive material may be less likely.

Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.

Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.

Abstract: A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a guard ring may be utilized.

Abstract: A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.

Abstract: Crossing trenches of different depths may be formed in the same semiconductor structure by etching the deeper trench first. The deeper trench and the substrate may then be covered with a material that prevents further etching. The covering is etched through for the shallower trench, leaving a protective covering in the deeper trench.