Patents by Inventor Ilya V. Karpov

Ilya V. Karpov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Read window in chalcogenide semiconductor memories
    Publication number: 20080112217
    Abstract: Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes phase.
    Type: Application
    Filed: November 9, 2006
    Publication date: May 15, 2008
    Inventors: Ilya V. Karpov, Sergey Kostylev, George A. Gordon, Ward D. Parkinson
  • RING HEATER FOR A PHASE CHANGE MEMORY DEVICE
    Publication number: 20080067486
    Abstract: A ring shaped heater surrounds a chalcogenide region along the length of a cylindrical solid phase portion thereof defining a change phase memory element. The chalcogenide region is formed in a sub-lithographic pore, so that a relatively compact structure is achieved. Furthermore, the ring contact between the heater and the cylindrical solid phase portion results in a more gradual transition of resistance versus programming current, enabling multilevel memories to be formed.
    Type: Application
    Filed: September 14, 2006
    Publication date: March 20, 2008
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Ilya V. Karpov, Sergey Kostylev, Charles C. Kuo
  • Damascene phase change memory
    Patent number: 7211819
    Abstract: A phase change material may include a pore formed of a relatively smaller phase change material and a relatively larger resistance heater. As a result, the relatively smaller portion of phase change material may have improved properties.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: May 1, 2007
    Assignee: Intel Corporation
    Inventor: Ilya V. Karpov
  • Phase change memory with damascene memory element
    Patent number: 7135696
    Abstract: A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: November 14, 2006
    Assignee: Intel Corporation
    Inventors: Ilya V. Karpov, Charles C. Kuo, Yudong Kim, Fabio Pellizzer