Abstract: In a method of determining a critical temperature of a semiconductor package, heat is applied to at least one semiconductor package. Temperatures of the semiconductor package are measured during the heating. Heights of the semiconductor package are also measured during the heating. A temperature of the semiconductor package measured at a point at which a height from among the measured heights of the semiconductor package is sharply increased so that swelling of the semiconductor package occurs is determined as the critical temperature of the semiconductor package. Thus, the critical temperature of the semiconductor package may be accurately determined.

Abstract: Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

Abstract: Methods for manufacturing a diffuser plate for a PECVD chamber are provided. The methods provide for applying a compliant abrasive medium to round the sharp edges at corners of the output holes on a contoured downstream side of a gas diffuser plate. By rounding the edges of the output holes reduces the flaking of deposited materials on the downstream side of the gas diffuser plate and reduces the amount of undesirable particles generated during the PECVD deposition process.

Abstract: A process kit comprises a shield and ring assembly positioned about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall that surrounds a sputtering target and a bottom wall that surrounds the substrate support, a support ledge, a sloped step, and a U-shaped channel with gas conductance holes. The ring assembly comprises a deposition ring and cover ring, the cover ring having a bulb-shaped protuberance about the periphery of the ring.

Abstract: Embodiments of the invention provide a method of forming a composite solar cell structure that includes preparing a device substrate, wherein the device substrate includes a glass substrate, a transparent conductive layer deposited over the glass substrate, one or more silicon layers deposited over the transparent conductive layer, a back contact layer deposited over the one or more silicon layers, and one or more internal electrical connections disposed on the back contact layer. The method also includes forming a mating pattern on a bonding material to match a topography of an exposed surface of the device substrate, the exposed surface comprising the back contact layer and the one or more internal electrical connections. The method also includes positioning the bonding material over the exposed surface, disposing a back glass substrate over the bonding material to form a composite structure, and compressing the composite structure.

Abstract: A process kit comprises a shield and ring assembly positioned about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall that surrounds a sputtering target and a bottom wall that surrounds the substrate support, a support ledge, a sloped step, and a U-shaped channel with gas conductance holes. The ring assembly comprises a deposition ring and cover ring, the cover ring having a bulb-shaped protuberance about the periphery of the ring.

Abstract: A sputtering target for a sputtering chamber comprises a backing plate and titanium sputtering plate mounted on the backing plate. The sputtering plate comprises a central cylindrical mesa having a plane, and a peripheral inclined annular rim surrounding the cylindrical mesa, the annular rim being inclined relative to the plane of the cylindrical mesa by an angle of at least about 8°.

Abstract: A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.

Abstract: A lift mechanism for and a corresponding use of a magnetron in a plasma sputter reactor. A magnetron rotating about the target axis is controllably lifted away from the back of the target to compensate for sputter erosion, thereby maintaining a constant magnetic field and resultant plasma density at the sputtered surface, which is particularly important for stable operation with a small magnetron, for example, one executing circular or planetary motion about the target axis. The lift mechanism can include a lead screw axially fixed to the magnetron support shaft and a lead nut engaged therewith to raise the magnetron as the lead nut is turned. Alternatively, the support shaft is axially fixed to a vertically moving slider. The amount of lift may be controlled according a recipe based on accumulated power applied to the target or by monitoring electrical characteristics of the target.