Abstract: This application discloses methods for prevention and treatment of cancers. Due to the larger size of human white blood cells compared to red blood cells, a decrease in the diameter of a part of a blood vessel can block the flow of white blood cells while allowing the flow of red blood cells. As a result, in tissues with such reduction in the diameter of blood vessels, there are areas where red blood cells are present, while there is a lack of white blood cells to fight the parasites and cancer cells. Therefore, cancer cells and other parasites can reside in such areas, replicate, and develop into diseases. The disclosed methods provide for widening of the blood vessels in which a reduction in the diameter of a part of the vessel blocks the flow of white blood cells, while allowing the flow of red blood cells. As a result of this widening, white blood cells may pass through the vessel, reach to the parasites or cancer cells, and confront them.

Abstract: This application discloses methods for prevention and treatment of infectious diseases. Due to the larger size of human white blood cells compared to red blood cells, a decrease in the diameter of a part of a blood vessel can block the flow of white blood cells while allowing the flow of red blood cells. As a result, in tissues with such reduction in the diameter of blood vessels, there are areas where red blood cells are present, while there is a lack of white blood cells to fight the parasites. Therefore, parasites can reside in such areas, replicate, and develop into infections. The disclosed methods provide for widening of the blood vessels in which a reduction in the diameter of a part of the vessel blocks the flow of white blood cells, while it allows the flow of red blood cells. As a result of this widening, white blood cells may pass through the vessel, reach to the parasites, and confront them.

Abstract: This application discloses methods for prevention and treatment of cancers and chronic diseases. Due to the larger size of human white blood cells compared to red blood cells, a decrease in the diameter of a part of a blood vessel can block the flow of white blood cells while allowing the flow of red blood cells. As a result, in tissues with such reduction in the diameter of blood vessels, there are areas where red blood cells are present, while there is a lack of white blood cells to fight the parasites and cancer cells. Therefore, cancer cells and other parasites can reside in such areas, replicate, and develop into diseases. The disclosed methods provide for widening of the blood vessels in which a reduction in the diameter of a part of the vessel blocks the flow of white blood cells, while it allows the flow of red blood cells. As a result of this widening, white blood cells may pass through the vessel, reach to the parasites or cancer cells, and fight them.

Abstract: This application discloses computer-implemented methods to share videos or audios between users, wherein a first user shares a video or an audio, wherein a second user or a computer-implemented algorithm enters an annotation or a voice, wherein the said second user or the said algorithm assigns a time interval to the said annotation or voice or to a modified version of the said annotation or voice, wherein a user or a computer-implemented algorithm can elect that the said annotation or voice or a modified version of the said annotation or voice be displayed or played during a time interval of the said audio or video or a modified version of the said audio or video. In some example implementations of the invention, said annotation or voice is a translation of a voice of the said video or audio during the said time interval of the said audio or video or a modified version of the said audio or video.

Abstract: This application discloses methods to be implemented in electronic devices having a display, wherein a presence of an object or a human, or a movement of an object or a human provides a signal to turn ON the said display or device, or to bring the said display or device out of a hibernate, or a power saving, or a lock mode. This application also discloses methods to be implemented in electronic devices having a display, wherein an absence an object or a human, or an absence of a moving object or a moving human provides a signal to turn OFF the said display or device, or to bring the said display or device into a hibernate, or a power saving or a lock mode.

Abstract: This application discloses a method to implement a light source in a cable, or in an electrical or electric connector, or in an electrical or electric adapter, or in a charger, or in an electrical or electronic plug. Said method comprises of implementation of a rechargeable electrical or electronic power source that may provide a power to turn ON the said light source. The said power source may charge up when the said cable, or connector, or adapter, or charger or plug is electrically or electronically connected to another electrical or electronic device, or to another cable, or to another connector, or to another adapter, or to another plug or to a mains power. Circuits and devices to implement the said method are also disclosed.

Abstract: An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep n-well region. The doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order. The ESD device has trigger and holding voltages, above the operation voltage of its protected circuit, which are layout-configurable by altering the distance between the n-drain and a side edge of the n-well region.

Abstract: This application discloses semiconductor devices with sharp gate edges including 2D and 3D memory cells, High Electron Mobility Transistors and tri-gate transistors. Implementation of a gate with sharp edges may improve the read and write speed and reduce the program and erase voltages in memory cells. It may also improve the gate control over the channel in tri-gate transistors and HEMTs. Methods to fabricate such devices are also disclosed.

Abstract: This application discloses methods and devices which may provide for smart and more efficient electrical and electronic systems. Implementation of smartphones and tablets to control some electrical or electronic systems are described. These may enhance the performance of the involved systems which may provide for a better marketing. In addition, methods are presented which may be applied to enhance the efficiencies of electrical or electronic devices or accessories of smartphones and tablets.

Abstract: This application discloses semiconductor devices with sharp gate edges including 2D and 3D memory cells, High Electron Mobility Transistors and tri-gate transistors. Implementation of a gate with sharp edges may improve the read and write speed and reduce the program and erase voltages in memory cells. It may also improve the gate control over the channel in tri-gate transistors and HEMTs. Methods to fabricate such devices are also disclosed.

Abstract: Three methods will be described which may be used to improve the performance of compound semiconductor devices and Field Effect Transistors. In the first method, implementation of more than one sheet of 2DEG or high-density electrons in compound semiconductor devices will be described which may be used to improve the performance of compound semiconductor diodes, resistors and transistors. In the second method, implementation of at least one discontinuity in sheet or sheets of 2DEG or high-density electrons will be discussed which can be used to improve the performance of compound semiconductor diodes, resistors and transistors. In the third method, a way to form an electrical connection between an electrode and a sheet of 2DEG or high density electrons will be presented which may be implemented in compound semiconductor devices to reduce the contract resistance between an electrode and a sheet of 2DEG or high-density electrons.

Abstract: Three methods will be described which may be used to improve the performance of compound semiconductor devices and Field Effect Transistors. In the first method, implementation of more than one sheet of 2DEG or high-density electrons in compound semiconductor devices will be described which may be used to improve the performance of compound semiconductor diodes, resistors and transistors. In the second method, implementation of at least one discontinuity in sheet or sheets of 2DEG or high-density electrons will be discussed which can be used to improve the performance of compound semiconductor diodes, resistors and transistors. In the third method, a way to form an electrical connection between an electrode and a sheet of 2DEG or high density electrons will be presented which may be implemented in compound semiconductor devices to reduce the contact resistance between an electrode and a sheet of 2DEG or high-density electrons.

Abstract: An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep n-well region. The doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order. The ESD device has trigger and holding voltages, above the operation voltage of its protected circuit, which are layout-configurable by altering the distance between the n-drain and a side edge of the n-well region.

Abstract: A method is presented to decrease the OFF-state leakage current of the Field Effect Transistors (FETs). The presented method comprises of the placement of dopants underneath or anywhere adjacent to the channel which causes an increase in the band barrier at the source edge of the semiconductor of gate region at the OFF state, providing for less leakage current. Compared with the conventional method of increasing the channel doping to decrease the OFF state leakage current and achieve more scalability, a lower channel doping concentration is needed to achieve the same OFF state leakage current. This provides for less impurity scattering and higher mobility which results in larger ON state currents, higher yields and faster devices.