Patents by Inventor Immo Koetschau

Immo Koetschau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12300446
    Abstract: A multi-junction photovoltaic device comprising a layer of metal oxynitride between a first sub-cell and a second sub-cell is disclosed, the first sub-cell having a layer comprising a perovskite light absorber material. In addition, a method of manufacturing said multi junction photovoltaic device is disclosed. The metal oxynitride is preferably titanium oxynitride. Advantageously, the device may be produced in a simple, fast, consistent and inexpensive manner, whilst the properties of the titanium oxynitride layer may be tuned to avoid the occurrence of local shunt paths and to reduce reflection losses.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: May 13, 2025
    Assignee: Oxford Photovoltaics Limited
    Inventors: Simon Kirner, Laura Miranda Perez, Immo Koetschau, Henry Snaith, Edward Crossland, Christopher Case, Alan Sharp
  • Publication number: 20230223205
    Abstract: A multi-junction photovoltaic device comprising a layer of metal oxynitride between a first sub-cell and a second sub-cell is disclosed, the first sub-cell having a layer comprising a perovskite light absorber material. In addition, a method of manufacturing said multi junction photovoltaic device is disclosed. The metal oxynitride is preferably titanium oxynitride. Advantageously, the device may be produced in a simple, fast, consistent and inexpensive manner, whilst the properties of the titanium oxynitride layer may be tuned to avoid the occurrence of local shunt paths and to reduce reflection losses.
    Type: Application
    Filed: June 17, 2021
    Publication date: July 13, 2023
    Inventors: Simon KIRNER, Laura MIRANDA PEREZ, Immo KOETSCHAU, Henry SNAITH, Edward CROSSLAND, Christopher CASE, Alan SHARP
  • Patent number: 8907253
    Abstract: In a method for producing a I-III-VI compound semiconductor layer, a substrate is provided with a coating which has a metallic precursor layer. The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a chalcogen at an ambient pressure of between 500 mbar and 1500 mbar, is converted into a compound semiconductor layer. The coating is kept at temperatures for the duration of an activation time which attain at least an activation barrier temperature, whereby as the activation barrier temperature a value of at least 600° C. is selected.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: December 9, 2014
    Assignee: Centrotherm Photovoltaics AG
    Inventors: Immo Koetschau, Dieter Schmid
  • Publication number: 20120289033
    Abstract: In a method for producing a I-III-VI compound semiconductor layer, a substrate is provided with a coating which has a metallic precursor layer. The coating is kept, for the duration of a process time, at temperatures of at least 350 degrees C. and the metallic precursor layer, in the presence of a chalcogen at an ambient pressure of between 500 mbar and 1500 mbar, is converted into a compound semiconductor layer. The coating is kept at temperatures for the duration of an activation time which attain at least an activation barrier temperature, whereby as the activation barrier temperature a value of at least 600° C. is selected.
    Type: Application
    Filed: October 21, 2010
    Publication date: November 15, 2012
    Applicant: CENTROTHERM PHOTOVOLTAICS AG
    Inventors: Immo Koetschau, Dieter Schmid