Abstract: In one embodiment, the present disclosure is directed to a method for performing diagnostics on a matching network that utilizes an electronically variable capacitor (EVC). According to the method, all the discrete capacitors of the EVC are switched out. At a first node, a parameter associated with a current flowing between a power supply and one or more of the switches of the discrete capacitors is measured. The method then switches in, one at a time, each discrete capacitor of the EVC. Upon the switching in of each discrete capacitor, the method re-measures the parameter at the first node and determines whether a change to the parameter at the first node is within a predetermined range to determine whether the corresponding switch, driver circuit, or filter of the discrete capacitor most recently switch in has failed.

Abstract: In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes a mechanically variable capacitor (MVC) and a second variable capacitor. A control circuit is configured to carry out a first process for altering the second variable capacitor and the RF source frequency to reduce reflected power. The control circuit is further configured to carry out a second process of, upon determining that the alteration of the RF source frequency has caused the RF source frequency to be outside, at a minimum, or at a maximum of a predetermined frequency range, determining a new MVC configuration to cause the RF source frequency, according to the first process, to be altered to be within or closer to the predetermined frequency range. The new MVC configuration is based on the RF source frequency and the predetermined frequency range.

Abstract: In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit is coupled between a plasma chamber and an RF source providing an RF signal having a frequency. The matching circuit includes a first electronically variable capacitor having a first variable capacitance and a second electronically variable capacitor having a second variable capacitance. A control circuit determines a first parameter related to the plasma chamber, and then determines, based on the first parameter, a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor. The control circuit then generates a control signal to alter the first variable capacitance and the second variable capacitance accordingly, causing the RF power reflected back to the RF source to decrease while the frequency of the RF source is not altered.

Abstract: In one embodiment, the present disclosure is directed to a method of impedance matching where an RF source is providing at least two non-zero pulse levels. For each of the at least two pulse levels, at a regular time interval, a control unit determines a parameter-related value that is based on a parameter related to the load, and repeatedly detects which of the at least two non-zero pulse levels is being provided by the RF source. Upon detecting one of the at least two non-zero pulse levels, for the detected pulse level, the control unit measures the parameter related to the load to determine a measured parameter value, determines the parameter-related value based on the measured parameter value, and alters the at least one EVC to provide the match configuration, the match configuration based on the parameter-related value.

Abstract: In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an RF input coupled to an RF source, an RF output coupled to a plasma chamber, and an electronically variable capacitor (EVC). A first control circuit controls the EVC and is separate and distinct from a second control circuit controlling the RF source. To assist in causing an impedance match between the RF source and the plasma chamber, the first control circuit determines, using a match lookup table with a value based on a detected RF parameter, a new EVC configuration for providing a new EVC capacitance. To further cause the impedance match, the second control circuit alters the variable frequency of the RF source, but operates independently from the first control circuit.

Abstract: In one embodiment, the present disclosure is directed to a method for matching an impedance. The method can include determining or receiving a reflection parameter value at an RF input or output; stopping the altering of a first capacitance and a second capacitance when the reflection parameter value is at or below a first reflection value; causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a second reflection value and at or below the third reflection value; and causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value.

Abstract: In one embodiment, a semiconductor processing tool includes a plasma chamber and an impedance matching circuit. The matching circuit includes a first electronically variable capacitor having a first variable capacitance, a second electronically variable capacitor having a second variable capacitance, and a control circuit. The control circuit is configured to determine a variable impedance of the plasma chamber, determine a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor, and generate a control signal to alter at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively. An elapsed time between determining the variable impedance of the plasma chamber to when RF power reflected back to the RF source decreases is less than about 150 ?sec.

Abstract: In one embodiment, the present disclosure is directed to an RF impedance matching network that includes an electronically variable capacitor (EVC) and a control circuit. The control circuit is coupled to a sensor configured to detecting an RF parameter. To cause an impedance match between an RF source and a plasma chamber, the control circuit determines, using a match lookup table with a value based on the detected RF parameter, a match combination of a new EVC configuration for providing a new EVC capacitance, and a new source frequency for the RF source. The control circuit then alters the EVC to the new EVC configuration, and alters the variable frequency of the RF source to the new source frequency.

Abstract: In one embodiment, the invention can be a system for cooling an enclosure enclosing electrical components and configured to prevent air and exhaust from escaping the enclosure. The system can include a heat sink comprising a heat exchanger, and a tube extending into and out of the heat exchanger, the tube configured to transport liquid through the heat exchanger. The system can further include a fan configured to push air heated by electrical components onto the heat exchanger. The heat exchanger can be configured to receive heat from air pushed by the fan, and transfer the received heat to the liquid being transported by the tube through the heat exchanger.

Abstract: A control circuit for a impedance matching circuit having first and second capacitor arrays receives as input one or more RF parameters of the impedance matching circuit, and in response thereto: determines a first match configuration for the first capacitor array and a second match configuration for the second capacitor array to create an impedance match between a fixed RF source impedance and a variable RF load impedance, the first match configuration and the second match configuration being determined from one or more look-up tables and based upon the detected one or more RF parameters; and alters at least one of the first array configuration and the second array configuration to the first match configuration and the second match configuration, respectively, by controlling the on and off states of (a) each discrete capacitor of the first capacitor array and (b) each discrete capacitor of the second capacitor array.

Abstract: In one embodiment, a radio frequency (RF) impedance matching network includes electronically variable capacitors (EVCs), each EVC including discrete capacitors operably coupled in parallel. The discrete capacitors include fine capacitors each having a capacitance value substantially similar to a fine capacitance value, and coarse capacitors each having a capacitance value substantially similar to a coarse capacitance value. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.

Abstract: In one embodiment, the present disclosure is directed to a method for matching an impedance. The method can include determining or receiving a reflection parameter value at an RF input or output; stopping the altering of a first capacitance and a second capacitance when the reflection parameter value is at or below a first reflection value; causing a limited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a second reflection value and at or below the third reflection value; and causing an unlimited altering of the first capacitance and the second capacitance to pursue an impedance match when the reflection parameter value is at or above a third reflection value.

Abstract: In one embodiment, a semiconductor processing tool includes a plasma chamber and an impedance matching circuit. The matching circuit includes a first electronically variable capacitor having a first variable capacitance, a second electronically variable capacitor having a second variable capacitance, and a control circuit. The control circuit is configured to determine a variable impedance of the plasma chamber, determine a first capacitance value for the first electronically variable capacitor and a second capacitance value for the second electronically variable capacitor, and generate a control signal to alter at least one of the first variable capacitance and the second variable capacitance to the first capacitance value and the second capacitance value, respectively. An elapsed time between determining the variable impedance of the plasma chamber to when RF power reflected back to the RF source decreases is less than about 150 ?sec.

Abstract: In one embodiment, an RF impedance matching network includes an RF input configured to operably couple to an RF source; an RF output configured to operably couple to a plasma chamber; a first electronically variable capacitor having a first variable capacitance; a second electronically variable capacitor having a second variable capacitance; and a control circuit operably coupled to the first and second electronically variable capacitors. The control circuit is configured to determine the variable impedance of the plasma chamber, determine a first capacitance value for the first variable capacitance and a second capacitance value for the second variable capacitance, and generate a control signal to alter the first and/or second variable capacitance. An elapsed time between determining the variable impedance of the plasma chamber to when RF power reflected back to the RF source decreases is less than about 150 ?sec.

Abstract: An RF impedance matching network includes an RF input configured to operably couple to an RF source, the RF source having a fixed RF source impedance; an RF output configured to operably couple to a plasma chamber, the plasma chamber having a variable plasma impedance; a series EVC; a shunt EVC; an RF input sensor; and a control circuit configured to: determine an input impedance; determine the plasma impedance; determine a first capacitance value for the series variable capacitance and a second capacitance value for the shunt variable capacitance, the determination of the first capacitance value and the second capacitance value based on the plasma impedance and the RF source impedance; generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance to the first capacitance value and the second capacitance value, respectively.

Abstract: In one embodiment, a radio frequency (RF) impedance matching network includes electronically variable capacitors (EVCs), each EVC including discrete capacitors operably coupled in parallel. The discrete capacitors include fine capacitors each having a capacitance value substantially similar to a fine capacitance value, and coarse capacitors each having a capacitance value substantially similar to a coarse capacitance value. The increase of the variable total capacitance of each EVC is achieved by switching in more of the coarse capacitors or more of the fine capacitors than are already switched in without switching out a coarse capacitor that is already switched in.

Abstract: A control circuit for an electronic switch includes a first power switch receiving a common input signal and a first voltage input and a second power switch receiving the common input signal and a second voltage input. The first and second power switches switchably connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal. The second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch are configured to asynchronously connect the first voltage input and the second voltage input, respectively, to the common output in response to the common input signal, the electronic switch being switched according to the first voltage input or the second voltage input being connected to the common output.

Abstract: An system and method for controlling a plasma chamber includes operably coupling an RF generator to the plasma chamber, the RF generator providing an RF signal to a chamber input of the plasma chamber; measuring a parameter at the chamber input; determining a rate of change based on the measured parameter; detecting an excessive rate of change condition comprising the rate of change exceeding a reference rate of change; detecting a repetitive change condition comprising a predetermined number of the excessive rate of change conditions in a predetermined time; upon detection of the repetitive change condition, decreasing a power of the RF signal provided to the chamber input.

Abstract: In one embodiment, an RF generator includes an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint indicative of a desired output power at the RF output; determine a power dissipation at the RF generator; alter the DC voltage to decrease the power dissipation at the RF generator; and alter the RF signal to enable the output power at the RF output to be substantially equal to the power setpoint.

Abstract: In one embodiment, the invention can be a system for cooling an enclosure enclosing electrical components and configured to prevent air and exhaust from escaping the enclosure. The system can include a heat sink comprising a heat exchanger, and a tube extending into and out of the heat exchanger, the tube configured to transport liquid through the heat exchanger. The system can further include a fan configured to push air heated by electrical components onto the heat exchanger. The heat exchanger can be configured to receive heat from air pushed by the fan, and transfer the received heat to the liquid being transported by the tube through the heat exchanger.