Patents by Inventor Imre Lajtos

Imre Lajtos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro photoluminescence imaging
    Patent number: 10883941
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: January 5, 2021
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • MICRO PHOTOLUMINESCENCE IMAGING
    Publication number: 20200300767
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Application
    Filed: June 20, 2018
    Publication date: September 24, 2020
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Micro Photoluminescence Imaging
    Publication number: 20190391079
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Application
    Filed: June 20, 2018
    Publication date: December 26, 2019
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Micro photoluminescence imaging
    Patent number: 10012593
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: July 3, 2018
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski
  • Micro Photoluminescence Imaging
    Publication number: 20160328840
    Abstract: In an example implementation, a method includes illuminating a wafer with excitation light having a wavelength and intensity sufficient to induce photoluminescence in the wafer. The method also includes detecting photoluminescence emitted from a portion of the wafer in response to the illumination, and detecting excitation light reflected from the portion of the wafer. The method also includes comparing the photoluminescence emitted from the portion of the wafer and the excitation light reflected from the portion of the wafer, and identifying one or more defects in the wafer based on the comparison.
    Type: Application
    Filed: May 4, 2015
    Publication date: November 10, 2016
    Inventors: Zoltan Tamas Kiss, Laszlo Dudas, Zsolt Kovacs, Imre Lajtos, Gyorgy Nadudvari, Nicolas Laurent, Lubomir L. Jastrzebski