Patents by Inventor Im-soo Park
Im-soo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11329053Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.Type: GrantFiled: January 12, 2021Date of Patent: May 10, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Yoon Ho Son, Jae Uk Shin, Yong Sun Ko, Im Soo Park, Sung Yoon Chung
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Publication number: 20210134809Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.Type: ApplicationFiled: January 12, 2021Publication date: May 6, 2021Inventors: Yoon Ho Son, Jae Uk Shin, Yong Sun Ko, Im Soo Park, Sung Yoon Chung
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Patent number: 10916549Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.Type: GrantFiled: September 16, 2019Date of Patent: February 9, 2021Inventors: Yoon Ho Son, Jae Uk Shin, Yong Sun Ko, Im Soo Park, Sung Yoon Chung
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Publication number: 20200013782Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.Type: ApplicationFiled: September 16, 2019Publication date: January 9, 2020Inventors: Yoon Ho SON, Jae Uk SHIN, Yong Sun KO, Im Soo PARK, Sung Yoon CHUNG
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Patent number: 10418366Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.Type: GrantFiled: January 4, 2018Date of Patent: September 17, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Yoon Ho Son, Jae Uk Shin, Yong Sun Ko, Im Soo Park, Sung Yoon Chung
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Publication number: 20180342521Abstract: Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.Type: ApplicationFiled: January 4, 2018Publication date: November 29, 2018Inventors: Yoon Ho Son, Jae Uk Shin, Yong Sun Ko, Im Soo Park, Sung Yoon Chung
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Patent number: 8766343Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: GrantFiled: January 23, 2012Date of Patent: July 1, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Publication number: 20120112317Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: ApplicationFiled: January 23, 2012Publication date: May 10, 2012Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Publication number: 20120064680Abstract: A method of forming a capacitor structure and manufacturing a semiconductor device, the method of forming a capacitor structure including sequentially forming a first mold layer, a supporting layer, a second mold layer, an anti-bowing layer, and a third mold layer on a substrate having a conductive region thereon; partially removing the third mold layer, the anti-bowing layer, the second mold layer, the supporting layer, and the first mold layer to form a first opening exposing the conductive region; forming a lower electrode on a sidewall and bottom of the first opening, the lower electrode being electrically connected to the conductive region; further removing the third mold layer, the anti-bowing layer, and the second mold layer; partially removing the supporting layer to form a supporting layer pattern; removing the first mold layer; and sequentially forming a dielectric layer and upper electrode on the lower electrode and the supporting layer pattern.Type: ApplicationFiled: September 9, 2011Publication date: March 15, 2012Inventors: Jung-Min Oh, Bo-Un Yoon, Gyu-Wan Choi, Kun-Tack Lee, Dae-Hyuk Kang, Im-Soo Park, Dong-Seok Lee, Young-Hoo Kim
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Patent number: 8119476Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: GrantFiled: October 18, 2010Date of Patent: February 21, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Publication number: 20110306197Abstract: Method of manufacturing semiconductor device are provided including forming an insulation layer having a pad on a substrate; forming an etch stop layer on the insulation layer and the pad; forming a mold structure having at least one mold layer on the etch stop layer; forming a first supporting layer on the mold structure; etching the first supporting layer and the mold structure to form a first opening exposing the etch stop layer; forming a spacer on a sidewall of the first opening; etching the etch stop layer using the spacer as an etching mask to form a second opening, different from the first opening, exposing a first portion of the pad having a first associated area; etching the etch stop layer using the spacer as an etching mask to form a third opening exposing a second portion of the pad having a second associated area, the second associated area being larger than the first associated area; and etching the mold structure to form a fourth opening having a width larger than a width of the third opening.Type: ApplicationFiled: June 9, 2011Publication date: December 15, 2011Inventors: Young-Hoo Kim, Bo-Un Yoon, Kun-Tack Lee, Dae-Hyuk Kang, Im-Soo Park
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Patent number: 8058180Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.Type: GrantFiled: February 15, 2008Date of Patent: November 15, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Won Kwon, Hyung-Ho Ko, Chang-Sup Mun, Woo-Gwan Shim, Im-Soo Park, Yu-Kyung Kim, Jeong-Nam Han
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Patent number: 7985999Abstract: A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.Type: GrantFiled: March 18, 2010Date of Patent: July 26, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Min Oh, Jeong-Nam Han, Chang-Ki Hong, Woo-Gwan Shim, Im-Soo Park
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Publication number: 20110159660Abstract: In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.Type: ApplicationFiled: October 18, 2010Publication date: June 30, 2011Inventors: Dae-Hyuk Kang, Bo-Un Yoon, Kun-Tack Lee, Woo-Gwan Shim, Ji-Hoon Cha, Im-Soo Park, Hyo-San Lee, Young-Hoo Kim, Jung-Min Oh
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Patent number: 7820508Abstract: A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.Type: GrantFiled: November 6, 2006Date of Patent: October 26, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Min Oh, Jeong-Nam Han, Chang-Ki Hong, Woo-Gwan Shim, Im-Soo Park
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Publication number: 20100187654Abstract: A semiconductor device having a capacitor and a method of fabricating the same may be provided. A method of fabricating a semiconductor device may include forming an etch stop layer and a mold layer sequentially on a substrate, patterning the mold layer to form a mold electrode hole exposing a portion of the etch stop layer, etching selectively the exposed etch stop layer by an isotropic dry etching process to form a contact electrode hole through the etch stop layer to expose a portion of the substrate, forming a conductive layer on the substrate and removing the conductive layer on the mold layer on the mold layer to form a cylindrical bottom electrode in the mold and contact electrode holes. The isotropic dry etching process may utilize a process gas including main etching gas and selectivity adjusting gas. The selectivity adjusting gas may increase an etch rate of the etch stop layer by more than an etch rate of the mold layer by the isotropic wet etching process.Type: ApplicationFiled: March 18, 2010Publication date: July 29, 2010Inventors: Jung-Min Oh, Jeong-Nam Han, Chang-Ki Hong, Woo-Gwan Shim, Im-Soo Park
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Patent number: 7488688Abstract: A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber.Type: GrantFiled: November 29, 2004Date of Patent: February 10, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-pil Chung, Kyu-whan Chang, Sun-jung Lee, Kun-tack Lee, Im-soo Park, Kwang-wook Lee, Moon-hee Lee
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Publication number: 20080194110Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.Type: ApplicationFiled: February 15, 2008Publication date: August 14, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Doo-Won Kwon, Hyung-Ho Ko, Chang-Sup Mun, Woo-Gwan Shim, Im-Soo Park, Yu-Kyung Kim, Jeong-Nam Han
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Patent number: 7354868Abstract: This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.Type: GrantFiled: March 24, 2005Date of Patent: April 8, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Won Kwon, Hyung-Ho Ko, Chang-Sup Mun, Woo-Gwan Shim, Im-Soo Park, Yu-Kyung Kim, Jeong-Nam Han
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Publication number: 20080044971Abstract: A method for fabricating a semiconductor device is disclosed. The method includes forming an etch stop layer on a substrate, forming a mold layer on the substrate, and forming an opening exposing the substrate by patterning the mold layer and the etch stop layer, wherein the opening includes a lower portion defined by the etch stop layer and a middle portion. The method further includes enlarging the lower portion by etching a side portion of the etch stop layer exposed by the opening using an etching solution including sulfuric acid and water; and forming a lower electrode on an inner surface of the opening including the enlarged lower portion, wherein, after enlarging the lower portion, a width of the lower portion is greater than a width of the middle portion.Type: ApplicationFiled: August 2, 2007Publication date: February 21, 2008Applicant: SAMSUNG ELECTRONICS CO,. LTD.Inventors: Dae-Hyuk KANG, Chang-Ki HONG, Kun-Tack LEE, Im-Soo PARK, Dong-Gyun HAN, Mong-Sup LEE, Jung-Min OH