Abstract: A mechanism is described for facilitating a dynamic selection and transmission of canned messages according to one embodiment. A method of embodiments, as described herein, includes selecting, at a computing device, a canned message from a plurality of canned messages, where the canned message includes a text message having one or more of a default message, a variable, and a symbol, wherein the selection is to be performed without a keyboard at the computing device, and transmitting the selected canned message.

Abstract: Sub-pixel rendering with gamma adjustment allows the luminance for the sub-pixel arrangement to match the non-linear gamma response of the human eye's luminance channel, while the chrominance can match the linear response of the human eye's chrominance channels. The gamma correction allows the sub-pixel rendering to operate independently of the actual gamma of a display device. The sub-pixel rendering techniques with gamma adjustment may be optimized for the gamma transfer curve of a display device in order to improve response time, dot inversion balance, and contrast.

Abstract: Provided are a semiconductor device including a diffusion barrier and a method for manufacturing the same. In the method, an interlayer insulating layer on a semiconductor substrate is formed. The interlayer insulating layer is selectively removed, so that a via hole is formed therein. A first diffusion barrier is formed on sidewalls and a bottom of the via hole using PEALD. A copper layer is formed above the first diffusion barrier, and CMP is performed on the copper layer until the interlayer insulating layer is exposed to form a copper line.

Abstract: There are provided an ultra thin film silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) having a recessed source/drain structure, and a method of fabricating the same.

Abstract: A transistor using impact ionization and a method of manufacturing the same are provided. A gate dielectric layer, a gate, and first and second spacers are formed on a semiconductor substrate. A first impurity layer is formed spaced from the first spacer and a second impurity layer is formed expanding and overlapping with the second spacer therebelow, by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask. A source and a drain are formed on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate. The source includes a first silicide layer to form a schottky junction with the ionization region.

Abstract: A non-volatile memory device using mobile ionic charges and a method of manufacturing the same are provided. The method includes forming a gate dielectric layer on a semiconductor substrate, injecting mobile ionic charges into the gate dielectric layer by leading source plasma to a surface of the gate dielectric layer and implanting ions within the source plasma into the gate dielectric layer using plasma doping, forming on the gate dielectric layer a gate to which a control voltage controlling distribution of the mobile ionic charges within the gate dielectric layer is supplied to control a threshold voltage, and forming a source region and a drain region in the semiconductor substrate near the gate.

Abstract: The present invention relates to a crushing method using large boreholes in an underwater rock in which plural large boreholes are drilled on the rock in a predetermined space, the drilled boreholes form plural free surfaces, and the large drop hammer gives a blow to the free surface, thus enhancing the crushing effect. The crushing method is comprised of the following processes: plural large boreholes, of which each size is 100˜300 mm?, are arranged on the rock to be crushed, and are drilled in a depth of 1˜10 m, and the free surface is reserved before the drop hammer work; a middle point between the adjoining large boreholes is set as target point; the drop hammer is lift above a position perpendicular to the target point, and is free-fallen to give a blow to the rock to be crushed; and the above processes are repeatedly operated.

Abstract: The present invention relates to a boring machine having differential global positioning system receiver for underwater rock and boring method thereof, new boring technology—a satellite navigation device orients the accurate position of a target—is brought to the underwater boring technology. A differential global positioning system (DGPS) receiver is provided at the body of a boring machine that is installed at the central opening of a self elevation platform (SEP) barge, the location of the boring machine is set to concentricity of the target boring position, and the position of the hull can be controlled without any movement of the boring machine. Then, the barge quickly moves to the next target boring location owing to the operation of a hull moving means so that the construction efficiency of the boring work can be enhanced.