Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.

Abstract: The efficient production of poly(tetramethylene ether) diacetate [PTMEA] or other diesters, from tetrahydrofuran [THF] is obtained utilizing an acid-based catalyst that is based on a morphologically reconfigured and Bronsted acidity enhanced halloysite derived from a preparation method of using naturally occurring halloysites. More specifically, the method relates to morphological modification of the internal pore structure of halloysites via supercritical carbon dioxide treatment directly applied onto the raw halloysite minerals, that yields highly synergistic and reproducible results of elimination of inaccessible and detrimental extra-small pores.

Abstract: The efficient production of poly(tetramethylene ether) diacetate [PTMEA] or other diesters, from tetrahydrofuran [THF] is obtained utilizing an acid-based catalyst that is based on a morphologically reconfigured and Bronsted acidity enhanced halloysite derived from a preparation method of using naturally occurring halloysites. More specifically, the method relates to morphological modification of the internal pore structure of halloysites via supercritical carbon dioxide treatment directly applied onto the raw halloysite minerals, that yields highly synergistic and reproducible results of elimination of inaccessible and detrimental extra-small pores.

Abstract: The present invention provides a dry interim storage container for spent nuclear fuel, precisely a dry interim storage container that can be filled with spent nuclear fuel wherein the storage container space is also filled with metal particles. The dry storage container for spent nuclear fuel of the present invention is filled with particles in its empty space for the spent nuclear fuel, which is advantageous in cooling efficiency and maintenance cost, compared with the conventional storage method using gas.

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: The efficient production of poly(tetramethylene ether) diacetate [PTMEA] or other diesters, from tetrahydrofuran [THF] is obtained utilizing an acid-based catalyst that is based on a morphologically reconfigured and Bronsted acidity enhanced halloysite derived from a preparation method of using naturally occurring halloysites. More specifically, the method relates to morphological modification of the internal pore structure of halloysites via supercritical carbon dioxide treatment directly applied onto the raw halloysite minerals, that yields highly synergistic and reproducible results of elimination of inaccessible and detrimental extra-small pores. PTMEA is readily converted to poly(tetramethylene ether) glycol (PTMEG) by a transesterification reaction.

Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.

Abstract: The present invention provides a dry interim storage container for spent nuclear fuel, precisely a dry interim storage container that can be filled with spent nuclear fuel wherein the storage container space is also filled with metal particles. The dry storage container for spent nuclear fuel of the present invention is filled with particles in its empty space for the spent nuclear fuel, which is advantageous in cooling efficiency and maintenance cost, compared with the conventional storage method using gas.

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: The present invention relates to a method for generating a reference signal to drive a display apparatus. A method according to the present invention may comprise generating a reference signal having a training pattern being repeated with a periodicity of two clock terms (CTs); and transmitting the reference signal to a phase locked loop (PLL). Each CT has a single embedded clock bit (CB) and a plurality of data bits, and the reference signal has a rising edge at a start point of a first CB corresponding to a first unit interval (UI) of a first CT, and a rising edge at an end point of a second CB corresponding to a first UI of a second CT. According to exemplary embodiments of the present disclosure, energy consumption and EMI effects can be remarkably reduced, and a complexity of PLL can be reduced.

Abstract: Provided are a nuclear fuel rod for fast reactors that includes a metallic fuel slug coated with a protective coating layer and a fabrication method thereof. The nuclear fuel rod for fast reactors that includes a surface treated metallic fuel slug and a cladding tube according to the present invention has an excellent effect of stabilizing components of the metallic fuel slug and fission products or impurities, because the interdiffusion between the metallic fuel slug and the cladding tube does not occur. Also, since the uniform coating on the surface of the metallic fuel slug may be facilitated and fabrication costs may be significantly reduced in comparison to a typical technique of using a functional material for preventing the interdiffusion at an inner surface of the cladding tube, it may be suitable for fabricating the nuclear fuel rod for fast reactors.

Abstract: There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Abstract: Provided are a nuclear fuel rod for fast reactors that includes a metallic fuel slug coated with a protective coating layer and a fabrication method thereof. The nuclear fuel rod for fast reactors that includes a surface treated metallic fuel slug and a cladding tube according to the present invention has an excellent effect of stabilizing components of the metallic fuel slug and fission products or impurities, because the interdiffusion between the metallic fuel slug and the cladding tube does not occur. Also, since the uniform coating on the surface of the metallic fuel slug may be facilitated and fabrication costs may be significantly reduced in comparison to a typical technique of using a functional material for preventing the interdiffusion at an inner surface of the cladding tube, it may be suitable for fabricating the nuclear fuel rod for fast reactors.

Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

Abstract: Disclosed herein is a high Cr Ferritic/Martensitic steel comprising 0.04 to 0.13% by weight of carbon, 0.03 to 0.07% by weight of silicon, 0.40 to 0.50% by weight of manganese, 0.40 to 0.50% by weight of nickel, 8.5 to 9.5% by weight of chromium, 0.45 to 0.55% by weight of molybdenum, 0.10 to 0.25% by weight of vanadium, 0.02 to 0.10% by weight of tantalum, 0.21 to 0.25% by weight of niobium, 1.5 to 3.0% by weight of tungsten, 0.015 to 0.025% by weight of nitrogen, 0.01 to 0.02% by weight of boron and iron balance. By regulating the contents of alloying elements such as nitrogen, born, the high Cr Ferritic/Martensitic steel with superior tensile strength and creep resistance is provided, and can be effectively used as an in-core component material for sodium-cooled fast reactor (SFR).

Abstract: A nuclear fuel rod for fast reactors includes a metallic fuel slug coated with a protective coating layer. In embodiments, a nuclear fuel rod for fast reactors includes a uranium and zirconium fuel slug having a single protective coating which is an oxide layer having a thickness in the range of 0.5 ?m to 100 ?m, and the protective coating layer may be configured to (i) prevent interdiffusion between the fuel slug and a cladding tube during fast reactor operation, and (ii) prevent a cladding tube from thinning during fission operation in a fast reactor.

Abstract: A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode.

Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructure

Abstract: The present invention relates to a method for generating a reference signal to drive a display apparatus. A method according to the present invention may comprise generating a reference signal having a training pattern being repeated with a periodicity of two clock terms (CTs); and transmitting the reference signal to a phase locked loop (PLL). Each CT has a single embedded clock bit (CB) and a plurality of data bits, and the reference signal has a rising edge at a start point of a first CB corresponding to a first unit interval (UI) of a first CT, and a rising edge at an end point of a second CB corresponding to a first UI of a second CT. According to exemplary embodiments of the present disclosure, energy consumption and EMI effects can be remarkably reduced, and a complexity of PLL can be reduced.