Abstract: The present invention relates to a robot cleaner and a method for controlling the same. The present invention provides a mobile robot and a method for controlling the same, the mobile robot using the rotational force of three or more rotary members as a moving power source thereof, wherein the mobile robot is controlled to effectively travel along a configured straight travel route and not to deviate from the configured straight travel route, or is controlled to immediately return to the configured straight travel route when deviating from the configured straight travel route.

Abstract: Embodiments relate to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device capable of simplifying a silicide manufacturing process using a photo resist overhang structure. According to embodiments, a surface is subjected to a monochlorobenzene coating processing to cure the surface of the exposed photo resist so as not to react with developing solution and such a processed photo resist is developed to make the lower of the photo resist in the overhang structure so as to form an accurate pattern according to the clear removal of the oxide film, making it possible to simply manufacture the silicide and the non-silicide without performing an etching process by a subsequent cobalt deposition process.

Abstract: A method for fabricating a semiconductor device is disclosed. The method includes: forming a photoresist film on a semiconductor substrate including a silicide forming region and non-silicide forming region; forming a photoresist pattern as a non-salicide pattern by patterning the photoresist film, so as to cover the non-silicide forming region and open the silicide forming region, with an overhang structure that a bottom is removed more compared to a top; forming a metal film on a top of the photoresist pattern and overall the semiconductor substrate in the silicide forming region; stripping the photoresist pattern and the metal film on the photoresist pattern; and forming a silicide metal film by annealing the metal film remaining on the semiconductor substrate. Therefore, the present invention simplifies a salicide process of a semiconductor device, making it possible to improve yields.

Abstract: A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

Abstract: A method of manufacturing an image sensor that may restrain the oxidization of a pad. A method of manufacturing an image sensor may include at least one of the following steps: Forming a photodiode structure including a pixel in an active region of a semiconductor substrate. Forming a conductive pad electrically connected the pixel in a peripheral region of the semiconductor substrate, where the peripheral region at least partially surrounds the active region. Forming a passivation layer with an opening exposing the pad on and/or over the photodiode structure. Covering the exposed pad with an etching prevention layer. Forming a color filter on and/or over the passivation layer corresponding to the pixel. Forming a microlens on and/or over the color filter. Removing the etching prevention layer from the pad.

Abstract: A method of forming a metal line pattern for a semiconductor device is provided. The method includes forming a preliminary structure on a semiconductor substrate, having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness; removing a top surface of the passivation layer so that the passivation layer has a second thickness; forming a sub-passivation layer on the passivation layer; forming an adhesion promoter and a photoresist pattern on the sub-passivation layer; and forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.

Abstract: A method for forming a metal line of a semiconductor device includes forming an interlayer insulation film over a semiconductor substrate, forming a trench for exposing at least a portion of the semiconductor substrate by using a selective etching process, and forming a diffusion barrier layer over the interlayer film and the inner walls of the trench, by using a plasma enhanced atomic layer deposition process in which a high frequency power generator is set to have a frequency of 13.56 MHz. The plasma enhanced atomic layer deposition process is performed with a base pressure in a chamber maintained at 1×10?8 to 3×10?7 torr.

Abstract: Provided is a method of manufacturing an image sensor. A microlens of inorganic material can be formed on a substrate by forming a seed microlens having a top surface with height differences, and then blanket etching the seed microlens to form a dome shaped microlens having a curvature following the height differences of the seed microlens. The height differences in the top surface of the seed microlens can be created by implanting nitrogen at different depths into an inorganic layer to form ion implantation regions, and removing the ion implantation regions from the inorganic layer.

Abstract: A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes a semiconductor substrate having a conductive layer; an interlayer dielectric layer formed on the semiconductor substrate, the interlayer dielectric layer having a hole with a taper angled at the hole's upper portion; a diffusion barrier layer formed on the hole and the interlayer dielectric layer; and a seed layer formed on the diffusion barrier layer.

Abstract: Provided is a method for manufacturing a metal interconnection in a semiconductor device. The semiconductor device fabricated according to one embodiment comprises a copper interconnection having reduced sheet and contact resistance. In the method for manufacturing the copper interconnection, a dielectric comprising a via hole is formed on a semiconductor substrate. A diffusion barrier is deposited in the via hole of the dielectric using a process including a plasma enhanced atomic layer deposition (PEALD) process. A copper metal layer can be formed on the via hole through an electroplating process.

Abstract: Embodiments relate to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device capable of simplifying a silicide manufacturing process using a photo resist overhang structure. According to embodiments, a surface is subjected to a monochlorobenzene coating processing to cure the surface of the exposed photo resist so as not to react with developing solution and such a processed photo resist is developed to make the lower of the photo resist in the overhang structure so as to form an accurate pattern according to the clear removal of the oxide film, making it possible to simply manufacture the silicide and the non-silicide without performing an etching process by a subsequent cobalt deposition process.

Abstract: A method for fabricating a semiconductor device is disclosed. The method includes: forming a photoresist film on a semiconductor substrate including a silicide forming region and non-silicide forming region; forming a photoresist pattern as a non-salicide pattern by patterning the photoresist film, so as to cover the non-silicide forming region and open the silicide forming region, with an overhang structure that a bottom is removed more compared to a top; forming a metal film on a top of the photoresist pattern and overall the semiconductor substrate in the silicide forming region; stripping the photoresist pattern and the metal film on the photoresist pattern; and forming a silicide metal film by annealing the metal film remaining on the semiconductor substrate. Therefore, the present invention simplifies a salicide process of a semiconductor device, making it possible to improve yields.

Abstract: A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes a semiconductor substrate having a conductive layer; an interlayer dielectric layer formed on the semiconductor substrate, the interlayer dielectric layer having a hole with a taper angled at the hole's upper portion; a diffusion barrier layer formed on the hole and the interlayer dielectric layer; and a seed layer formed on the diffusion barrier layer.

Abstract: Provided are an image sensor and a method for manufacturing the same. A trench can be formed through metal interconnection layers of the image sensor in a region corresponding to a light receiving device for each unit pixel. A passivation layer pattern can be provided at sidewalls of the trench to inhibit light incident into the metal interconnection layers and reduce cross-talk and noise. A filler material can be provided to fill the trench. A color filter layer and microlens can be formed on the filler material. The filler material can be, for example, a polymer, an oxide layer, or a photoresist.

Abstract: A method for forming a thin film of a semiconductor device, which may include at least one of the following steps: Forming a Tantalum Nitride (TaN) film over a semiconductor substrate by atomic layer deposition. Forming a Tantalum (Ta) film by converting at least a portion of a Tantalum Nitride (TaN) film into Tantalum (Ta) by soaking the TaN film in a diluted HNO3 solution.

Abstract: Disclosed are an image sensor and a method for fabricating the same. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a photoresist pattern as a mask; forming a metal layer on the photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the photoresist pattern, and at least a portion of the sacrificial oxide layer; and forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film.

Abstract: Provided is a method of manufacturing an image sensor. A microlens of inorganic material can be formed on a substrate by forming a seed microlens having a top surface with height differences, and then blanket etching the seed microlens to form a dome shaped microlens having a curvature following the height differences of the seed microlens. The height differences in the top surface of the seed microlens can be created by implanting nitrogen at different depths into an inorganic layer to form ion implantation regions, and removing the ion implantation regions from the inorganic layer.

Abstract: A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with NO2 to form a Ta film. The NO2 is formed by reacting NH3 with O2.

Abstract: A method of manufacturing an image sensor that may restrain the oxidization of a pad. A method of manufacturing an image sensor may include at least one of the following steps: Forming a photodiode structure including a pixel in an active region of a semiconductor substrate. Forming a conductive pad electrically connected the pixel in a peripheral region of the semiconductor substrate, where the peripheral region at least partially surrounds the active region. Forming a passivation layer with an opening exposing the pad on and/or over the photodiode structure. Covering the exposed pad with an etching prevention layer. Forming a color filter on and/or over the passivation layer corresponding to the pixel. Forming a microlens on and/or over the color filter. Removing the etching prevention layer from the pad.

Abstract: A method of forming a metal line pattern for a semiconductor device is provided. The method includes forming a preliminary structure on a semiconductor substrate, having a lower barrier metal layer, a metal layer, and an upper barrier and/or passivation layer having a first thickness; removing a top surface of the passivation layer so that the passivation layer has a second thickness; forming a sub-passivation layer on the passivation layer; forming an adhesion promoter and a photoresist pattern on the sub-passivation layer; and forming a metal line pattern by etching the preliminary structure using the photoresist pattern as an etching mask.