Abstract: Provided are an apparatus and method for controlling a ripple current sensing motor. An apparatus for controlling a ripple current sensing motor may include a first shunt resistor having one end connected to one end of a motor and the other end of the first shunt resistor connected to a ground, a second shunt resistor having one end connected to the other end of the motor and the other end of the second shunt resistor connected to the ground, a first amplifying circuit amplifying a first signal from one end of the motor, a second amplifying circuit amplifying a second signal from the other end of the motor, and a detector detecting a rotation amount and a rotation direction of the motor using a change in voltages of a first detection signal from the first amplifying circuit and a second detection signal from the second amplifying circuit.

Abstract: Provided are a substrate treating unit, and substrate treating apparatus and method using the same. Two nozzle arms are provided, and photoresist liquid nozzles and an organic solvent nozzle are installed in each of the nozzle arms. A temperature of a photoresist liquid flowing into the photoresist liquid nozzles and a temperature of an organic solvent flowing into the organic solvent nozzle are maintained by a temperature control fluid supplied through the same passage. Also, a waiting port in which a nozzle arm used in a process temporarily waits is provided. The organic solvent is provided to a photoresist liquid nozzle that is not used in a process and is not provided to a photoresist liquid nozzle used in the process.

Abstract: In an apparatus for performing a substrate developing process, a first washing tank and a second washing tank are disposed on both sides of a substrate support section for supporting the substrate opposite to each other to wash a developing nozzle. The developing nozzle moves in a horizontal direction from the first washing tank toward the second washing tank and supplies a developing solution onto the substrate in the meantime. After supplying the developing solution, the developing nozzle is received in the second washing tank, and the developing solution adhered to the developing nozzle is removed by a washing solution in the second washing tank.

Abstract: A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsorption enhancement layer formed on a surface of the first protective layer, and a second protective layer formed on a surface of the atom adsorption enhancement layer.

Abstract: A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an out-gassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired out-gassing from the dielectric layer, and depositing an aluminum layer on the out-gassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the out-gassing barrier layer formed under the aluminum layer to prevent out-gassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.

Abstract: A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an out-gassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired out-gassing from the dielectric layer, and depositing an aluminum layer on the out-gassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the out-gassing barrier layer formed under the aluminum layer to prevent out-gassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.

Abstract: A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an outgassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired outgassing from the dielectric layer, and depositing an aluminum layer on the outgassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the outgassing barrier layer formed under the aluminum layer to prevent outgassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.

Abstract: Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

Abstract: Provided are a unit for supplying chemical liquid, and apparatus and method for treating a substrate using the unit. A pre-wet, photoresist, and edge bead removal nozzles are mounted on a single nozzle body. Therefore, the equipment installing space can be saved as compared with a case where the nozzles are installed on respective nozzle arms, thereby making better use of a space for installing equipments.

Abstract: A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to cover surfaces of the plurality of phase change structures, an atom adsorption enhancement layer formed on a surface of the first protective layer, and a second protective layer formed on a surface of the atom adsorption enhancement layer.

Abstract: Provided are a substrate treating unit, and substrate treating apparatus and method using the same. Two nozzle arms are provided, and photoresist liquid nozzles and an organic solvent nozzle are installed in each of the nozzle arms. A temperature of a photoresist liquid flowing into the photoresist liquid nozzles and a temperature of an organic solvent flowing into the organic solvent nozzle are maintained by a temperature control fluid supplied through the same passage. Also, a waiting port in which a nozzle arm used in a process temporarily waits is provided. The organic solvent is provided to a photoresist liquid nozzle that is not used in a process and is not provided to a photoresist liquid nozzle used in the process.

Abstract: In an apparatus for performing a substrate developing process, a first washing tank and a second washing tank are disposed on both sides of a substrate support section for supporting the substrate opposite to each other to wash a developing nozzle. The developing nozzle moves in a horizontal direction from the first washing tank toward the second washing tank and supplies a developing solution onto the substrate in the meantime. After supplying the developing solution, the developing nozzle is received in the second washing tank, and the developing solution adhered to the developing nozzle is removed by a washing solution in the second washing tank.

Abstract: Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

Abstract: Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

Abstract: A method for fabricating a contact of a semiconductor device includes the steps of forming a dielectric layer having a contact hole on a semiconductor substrate, forming an outgassing barrier layer comprising a poly-silicon layer to cover at least inner walls of the contact hole in order to prevent undesired outgassing from the dielectric layer, and depositing an aluminum layer on the outgassing barrier layer. The contact structure of the semiconductor device includes the aluminum layer filled in the contact layer formed on the semiconductor substrate, and the outgassing barrier layer formed under the aluminum layer to prevent outgassing from the dielectric layer. A fine contact can be formed along with the aluminum layer, thereby realizing the contact structure of a lower contact resistance. As a result, it is possible to realize stabilization of an overall contact resistance of the semiconductor device.

Abstract: Provided is a metal interconnection structure of a semiconductor device, comprising a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.

Abstract: A method for forming a bit line of a semiconductor device, in which tungsten is deposited just after depositing a metallic barrier layer, a nitride layer is deposited after forming a bit line to prevent the bit line from oxidation due to the exposure of tungsten, and then a rapid thermal treatment is performed, whereby the contact resistance of the bit line is stabilized, and an additional process of depositing TiN due to the micro crack generated by the rapid thermal treatment is not needed, so the manufacturing process becomes simple and the productivity of manufacturing the semiconductor device is improved.

Abstract: A method of forming contact for a semiconductor device is disclosed.

Abstract: A method for forming a bit line of a semiconductor device, in which tungsten is deposited just after depositing a metallic barrier layer, a nitride layer is deposited after forming a bit line to prevent the bit line from oxidation due to the exposure of tungsten, and then a rapid thermal treatment is performed, whereby the contact resistance of the bit line is stabilized, and an additional process of depositing TiN due to the micro crack generated by the rapid thermal treatment is not needed, so the manufacturing process becomes simple and the productivity of manufacturing the semiconductor device is improved.