Abstract: A method for patterning a stack having a patterned organic mask with a plurality of mask features including sidewalls and tops, a hardmask and an etch layer, wherein the patterned organic mask is positioned over the hardmask which is positioned over the etch layer is provided. An atomic layer deposition is deposited, wherein the depositing the atomic layer deposition controllably trims the plurality of mask features of the patterned organic mask. The atomic layer deposition is broken through. The hardmask is selectively etched with respect to the patterned organic mask, wherein the atomic layer deposition reduces faceting of the plurality of mask features of the patterned organic mask during the selective etching.

Abstract: A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times.

Abstract: A method for forming a stair-step structure in a substrate within a plasma processing chamber is provided. An organic mask is formed over the substrate. The organic mask is trimmed with a vertical to lateral ratio of less than 0.8, wherein the trimming simultaneously forms a deposition over the organic mask. The substrate is etched. The steps of trimming the organic mask and etching the substrate are cyclically repeated a plurality of times.

Abstract: An isocyanurate compound for forming an organic anti-reflective coating layer, which has superior stability and etch rate at a high temperature, and which has a high refractive index, is represented by following Formula 1. In Formula 1, R is independently a hydrogen atom or a methyl group, R1 is independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 6 of hetero atoms, and R2 independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 15 of hetero atoms, wherein, R1 can have at least two bonding parts, and in the case that R1 has at least two bonding parts, the rest parts except R1 of the compounds represented by Formula 1 can connect to the R1 to form a polymer structure.

Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: An isocyanurate compound for forming an organic anti-reflective coating layer, which has superior stability and etch rate at a high temperature, and which has a high refractive index, is represented by following Formula 1. In Formula 1, R is independently a hydrogen atom or a methyl group, R1 is independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 6 of hetero atoms, and R2 independently a chain type or ring type saturated or unsaturated hydrocarbyl group of 1 to 15 carbon atoms containing 0 to 15 of hetero atoms, wherein, R1 can have at least two bonding parts, and in the case that R1 has at least two bonding parts, the rest parts except R1 of the compounds represented by Formula 1 can connect to the R1 to form a polymer structure.

Abstract: A method for selectively etching a high-k dielectric layer with respect to a polysilicon material is provided. The high-k dielectric layer is partially removed by Ar sputtering, and then the high-k dielectric layer is etched using an etching gas comprising BCl3. The high-k dielectric layer and the polysilicon material may be formed on a substrate. In order to partially remove the high-k dielectric layer, a sputtering gas containing Ar is provided into an etch chamber in which the substrate is placed, a plasma is generated from the sputtering gas, and then the sputtering gas is stopped. In order to etch the high-k dielectric layer, the etching gas is provided into the etch chamber, a plasma is generated from the etching gas, and then the etching gas is stopped.

Abstract: A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH3), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: A photosensitive compound as a molecular resist whose size is smaller than conventional polymer for photoresist, and which can form a nano assembly, and a photoresist composition including the same are disclosed. The photosensitive compound represented by the following formula. Also, the present invention provides a photoresist composition comprising 1 to 85 wt % (weight %) of the photosensitive compound; 0.05 to 15 weight parts of a photo-acid generator with respect to 100 weight parts of the photosensitive compound; and 50 to 5000 weight parts of an organic solvent with respect to 100 weight parts of the photosensitive compound. In the formula, n is the number of repetition of an isopropyl oxide (—CH(CH3)CH2O—) monomer, and is an integer of 1 to 40, and R is an alkyl group of 1 to 20 carbon atoms or a cycloalkyl group of 3 to 20 carbon atoms.

Abstract: The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.

Abstract: A method for selectively etching a high-k dielectric layer with respect to a polysilicon material is provided. The high-k dielectric layer is partially removed by Ar sputtering, and then the high-k dielectric layer is etched using an etching gas comprising BCl3. The high-k dielectric layer and the polysilicon material may be formed on a substrate. In order to partially remove the high-k dielectric layer, a sputtering gas containing Ar is provided into an etch chamber in which the substrate is placed, a plasma is generated from the sputtering gas, and then the sputtering gas is stopped. In order to etch the high-k dielectric layer, the etching gas is provided into the etch chamber, a plasma is generated from the etching gas, and then the etching gas is stopped.

Abstract: A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. wherein, R* is a hydrogen atom or a methyl group, R1 and R2 are independently a C1˜C20 alkyl group, a C4˜C20 cycloalkyl group, a C6˜C20 aryl group or a C7˜C20 arylalkyl group, one of R1 and R2 may not exist, and R1 and R2 can be connected to form a ring.

Abstract: A photosensitive polymer which can form a fine circuit pattern by exacting with extreme UV and deep UV, and can improve a line width stability of a pattern by significantly reducing line edge roughness after developing, and a photoresist composition including the same are disclosed. The photosensitive polymer for extreme UV and deep UV includes a repeating unit represented by the following Formula 1, in Formula 1, R1 and R1? are independently a hydrogen atom, methyl group, or trifluoromethyl group, and R2 is wherein Ra and Rb are independently alkyl group of 1 to 10 carbon atoms, aryl group of 6 to 10 carbon atoms, or arylalkyl group of 7 to 12 carbon atoms, and can be connected together to form ring, and a and b are mol % of each repeating unit with respect to the total repeating unit constituting the photosensitive polymer, and are 1 to 99 mol % and 1 to 99 mol % respectively.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R1 is a substituted or non-substituted alky group of C1 to C5.

Abstract: A photoresist polymer having a spiro cyclic ketal group, and a photoresist composition including the same is disclosed. The photoresist polymer and the photoresist composition can improve the resolution and the process margin due to its low activation energy of the deprotection reaction of the spiro cyclic ketal group, and can produce fine photoresist patterns due to its low PEB (Post Exposure Baking) temperature sensitivity.

Abstract: Fin FET semiconductor devices are provided which include a substrate, an active pattern that protrudes vertically from the substrate and that extends laterally in a first direction, a device isolation layer which has a top surface that is lower than a top surface of the active pattern, a gate structure on the substrate that extends laterally in a second direction to cover a portion of the active pattern and a conductive layer that is on at least portions of side surfaces of the active pattern that are adjacent a side portion of the gate structure. The conductive layer may comprise a semiconductor layer, and the semiconductor layer may be in electrical contact with a contact pad. In other embodiments, the conductive layer may comprise a contact pad.

Abstract: A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has a repeating unit represented by wherein, R1 is hydrogen or methyl group, and R2 is a substituted or non-substituted alky group of C1 to C5. The composition for forming the organic anti-reflective coating layer includes the polymer having the repeating unit represented by above Formulas; a light absorber; and a solvent.

Abstract: A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. wherein, R* is a hydrogen atom or a methyl group, R1 and R2 are independently a C1˜C20 alkyl group, a C4˜C20 cycloalkyl group, a C6˜C20 aryl group or a C7˜C20 arylalkyl group, one of R1 and R2 may not exist, and R1 and R2 can be connected to form a ring.