Abstract: A semiconductor memory device includes a source layer, a channel structure, gate electrodes on the source layer and spaced apart on a sidewall of the channel structure, and a common source line. The gate electrodes include a first word line group including first and second gate electrodes and a second word line group including third and fourth gate electrodes. The semiconductor memory device, in response to a voltage of the common source line reaching a target voltage, causes an inhibition voltage to be applied to the second word line group and an erase voltage to be applied to the first word line group in a first erase operation interval, and causes the inhibition voltage to be applied to the first word line group and the erase voltage to be applied to the second word line group in a second erase operation interval.

Abstract: An embodiment discloses a method for controlling a vehicle virtualization structure-based device including the steps of receiving a request for use of a device from at least one container among a plurality of containers; and determining the use of the device according to a type of the device and a type of the container that transmits the request for use.

Abstract: The present disclosure relates to a printed circuit board including, a first insulating layer, a first metal layer disposed on the first insulating layer, a bridge disposed on the first metal layer and including a bridge insulating layer and a bridge circuit layer, a second insulating layer disposed on the first insulating layer and covering at least a portion of the bridge, a second metal layer disposed on the second insulating layer, and a connecting via penetrating the bridge and the second insulating layer to connect the first metal layer to the second insulating layer. The connecting via is spaced apart from the bridge circuit layer.

Abstract: Provided is an organic light emitting device comprising a light emitting layer comprising an organic alloy of a compound of Chemical Formula 1 and a compound of Chemical Formula 2, the device having improved driving voltage, efficiency, and lifespan: where A is a benzene ring fused with the two adjacent rings, X1, X2 and X3 are each independently CH or N, provided that at least one of X1, X2 and X3 is N, Ar1-Ar5 are each independently a substituted or unsubstituted C6-60 aryl or a substituted or unsubstituted C2-60 heteroaryl containing at least one of N, O and S, and the other substituents are defined in the specification, provided that at least one of Ar4 and Ar5 is substituted with at least one deuterium, or at least one R2 is deuterium.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including an organic alloy of a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, and having improved driving voltage, efficiency and lifetime.

Abstract: An organic light emitting device comprising an anode, a cathode, and a light emitting layer between the anode and the cathode, the light emitting layer including a compound represented by the following Chemical Formula 1 and a compound represented by the following Chemical Formula 2, is provided.

Abstract: An organic light emitting device having improved efficiency, driving voltage, and lifespan is provided. The organic light emitting device comprises an anode, a cathode, and a light emitting between the anode and the cathode, and the light emitting layer comprises a first compound represented by Chemical Formula 1 and a second compound represented by Chemical Formula 2.

Abstract: A compound represented by Chemical Formula 1 and an organic light emitting device including the same are provided. The compound is used as a material for an organic material layer of the organic light emitting device, and provides improved efficiency, low driving voltage, and increased lifespan of the organic light emitting device.

Abstract: A peripheral component interconnect express (PCIe) device includes a common function performing operations associated with a PCIe interface according to a function type, the common function being programmable to be a function type selected from a plurality function types, an access identification information controller generating first access identification information for allowing an access to the common function, and providing the first access identification information to an assigned system image to which the common function has been assigned, a data packet receiver receiving a data packet including target identification information indicating a target system image from the target system image, and an access allowance determiner determining whether or not to allow the target system image to access the common function based on the first access identification information and the target identification information.

Abstract: A display device includes: a display panel; a driving voltage generator; a power voltage generator; an input voltage generator; and a timing controller. The display panel is provided with a pixel configured to emit light by using a driving voltage. The driving voltage generator is configured to supply the driving voltage to the pixel. The power voltage generator is configured to generate power voltages for driving of the display panel by using an input voltage, and generating an input voltage sensing value by sensing the input voltage. The input voltage generator is configured to supply the input voltage to the power voltage generator. The timing controller is configured to control an operation of at least one of the driving voltage generator, the power voltage generator, and the input voltage generator according to the input voltage sensing value.

Abstract: An optical gene biosensor is disclosed. The optical gene biosensor includes a substrate; a molecular beacon anchored to the substrate, wherein the molecular beacon includes an oligonucleotide specifically binding to a target nucleic acid molecule and a first compound bound to a first terminal of the oligonucleotide; an optical marker specifically binding to the first compound, wherein the optical marker is configured to retro-reflect irradiated light; a light source for irradiating the optical marker with light; and a light-receiver for receiving light retro-reflected from the optical marker. The optical gene biosensor may perform accurate quantitative analysis of a target nucleic acid molecule using both non-spectral and spectral light sources.

Abstract: An optical probe for a bio-sensor selectively conjugated to a target analyte and configured to retro-reflect incident light thereto is disclosed. The optical probe for the bio-sensor includes: a transparent core particle; a total-reflection inducing layer covering a portion of a surface of the core particle, the inducing layer is made of a material having a refractive index lower than a refractive index of the core; a modifying layer formed on the total-reflection inducing layer; and an analyte-sensing substance bound to the modifying layer, the sensing substance is selectively conjugated to the target analyte. This optical probe may serve as an excellent optical probe for both a non-spectral light source and a spectral light source.

Abstract: According to an aspect, a current mode logic circuit comprise a first trim resistor and a second trim resistor connected to a supply voltage, a first transistor connected to an input voltage, a second transistor connected to an inverted input voltage and a third transistor and a fourth transistor connected to the first transistor and the second transistor, respectively, in a cascode manner in order to control magnitudes of an output voltage and an inverted output voltage of the current mode logic circuit.

Abstract: Disclosed is a continuous time linear equalizer circuit having a higher bandwidth by a plurality of filters connected to different signal paths in a T-coil circuit.

Abstract: According to an aspect, a current mode logic circuit comprise a first transistor to which an input voltage is applied, a second transistor connected in parallel with the first transistor; and a voltage sampling circuit which is connected to the first transistor and the second transistor and resets an output voltage output by integrating the input voltage for a predetermined set time (T) in a manner in which the output voltage is integrated in a direction opposite to a direction in which the input voltage is integrated for the predetermined set time (T).

Abstract: A bulk acoustic resonator comprises a membrane including a piezoelectric film having multiple layers of piezoelectric material. At least one of the multiple layers of piezoelectric material has a different dopant concentration than another of the multiple layers of piezoelectric material.

Abstract: A bulk acoustic wave (BAW) device is provided comprising a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a raised frame structure outside of a middle area of an active domain of the BAW device, the raised frame structure comprising one or more raised frame layer(s). At least one of the raised frame layer(s) comprises a tapered portion tapering in a direction towards the middle area of the active domain. A packaged module comprising such a BAW device is also provided. A wireless mobile device comprising such a packaged module is also provided.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a piezoelectric layer between a first electrode and a second electrode and a suspended frame structure that is suspended over a gap. The gap can be between the first electrode and the piezoelectric layer or between the second electrode and the piezoelectric layer. The bulk acoustic wave devices can have an inner raised frame portion inside of the suspended frame. The gap can be disposed between portions of the first and second electrodes that extend past an end of the piezoelectric layer. A conductive material can extend through an opening in a passivation layer at a location directly above the gap.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a piezoelectric layer between a first electrode and a second electrode and a suspended frame structure that is suspended over a gap. The gap can be between the first electrode and the piezoelectric layer or between the second electrode and the piezoelectric layer. The bulk acoustic wave devices can have an inner raised frame portion inside of the suspended frame. The gap can be disposed between portions of the first and second electrodes that extend past an end of the piezoelectric layer. A conductive material can extend through an opening in a passivation layer at a location directly above the gap.