Patents by Inventor In Eung Kim

In Eung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12148281
    Abstract: A data logger device is provided. The data logger device according to an example embodiment of the present invention comprises: a sensing unit mounted on one surface of a flexible printed circuit board, and including a sensor that detects at least one piece of information; a display unit that, when an abnormal state is detected on the basis of information measured via the sensing unit, irreversibly displays the abnormal state; a control unit that controls driving of the sensing unit and the display unit; a power supply unit that provides driving power to the control unit; and a cover member that prevents the outside exposure of the sensing unit, the display unit, the control unit, and the power supply unit.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: November 19, 2024
    Assignee: AMOSENSE CO., LTD.
    Inventors: In Eung Kim, Jin Sung Yang, Byeong An Yu
  • Publication number: 20230096737
    Abstract: A data logger device is provided. The data logger device according to an example embodiment of the present invention comprises: a sensing unit mounted on one surface of a flexible printed circuit board, and including a sensor that detects at least one piece of information; a display unit that, when an abnormal state is detected on the basis of information measured via the sensing unit, irreversibly displays the abnormal state; a control unit that controls driving of the sensing unit and the display unit; a power supply unit that provides driving power to the control unit; and a cover member that prevents the outside exposure of the sensing unit, the display unit, the control unit, and the power supply unit.
    Type: Application
    Filed: March 5, 2021
    Publication date: March 30, 2023
    Applicant: AMOSENSE CO.,LTD.
    Inventors: In Eung KIM, Jin Sung YANG, Byeong An YU
  • Patent number: 7648849
    Abstract: A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
    Type: Grant
    Filed: November 1, 2007
    Date of Patent: January 19, 2010
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jae Hoon Lee, In Eung Kim, Yong Chun Kim, Hyun Kyung Kim, Moon Heon Kong
  • Publication number: 20080064133
    Abstract: A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
    Type: Application
    Filed: November 1, 2007
    Publication date: March 13, 2008
    Applicant: SAMSUNG ELECTRO-MECHANICS., LTD
    Inventors: Jae Hoon LEE, In Eung KIM, Yong Chun KIM, Hyun Kyung KIM, Moon Heon KONG
  • Patent number: 7095769
    Abstract: A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.
    Type: Grant
    Filed: March 30, 2004
    Date of Patent: August 22, 2006
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang Ho Yoon, Gueorgui Pak, In Eung Kim
  • Patent number: 7091055
    Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: August 15, 2006
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hun Joo Hahm, In Eung Kim, Jeong Seok Na, Seung Jin Yoo, Young Ho Park, Soo Min Lee
  • Patent number: 7067401
    Abstract: Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
    Type: Grant
    Filed: September 27, 2005
    Date of Patent: June 27, 2006
    Assignee: Samsung Electro-Mechanics Co., LTD
    Inventors: Sun Woon Kim, In Eung Kim, Hun Joo Hahm, Soo Min Lee, Dong Joon Kim, Je Won Kim
  • Patent number: 7018912
    Abstract: Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
    Type: Grant
    Filed: March 23, 2004
    Date of Patent: March 28, 2006
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sun Woon Kim, In Eung Kim, Hun Joo Hahm, Soo Min Lee, Dong Joon Kim, Je Won Kim
  • Patent number: 6914262
    Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: July 5, 2005
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hun Joo Hahm, In Eung Kim, Jeong Seok Na, Seung Jin Yoo, Young Ho Park, Soo Min Lee
  • Publication number: 20040264532
    Abstract: A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.
    Type: Application
    Filed: March 30, 2004
    Publication date: December 30, 2004
    Inventors: Sang Ho Yoon, Gueorgui Pak, In Eung Kim
  • Publication number: 20040262617
    Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
    Type: Application
    Filed: October 22, 2003
    Publication date: December 30, 2004
    Inventors: Hun Joo Hahm, In Eung Kim, Jeong Seok Na, Seung Jin Yoo, Young Ho Park, Soo Min Lee
  • Publication number: 20040248377
    Abstract: A method for manufacturing vertical GaN light emitting diodes is provided. The method comprises the steps of: forming a light emitting structure on a sapphire substrate, said light emitting structure including a first conductive GaN clad layer, an active layer and a second conductive GaN clad layer. The light emitting structure is divided into plural units so that the first conductive GaN clad layer of a thickness of at least approximately 100 Å remains. A conductive substrate is attached to the divided upper surface of the light emitting structures using a conductive adhesive layer. A lower surface of the sapphire substrate is irradiated by laser beam so that the sapphire substrate is removed from the unit light emitting structures. First and second contacts are formed respectively on the surfaces of the first conductive clad layer and the conductive substrate. Finally, The resulting structure is cut into plural unit light emitting diodes.
    Type: Application
    Filed: July 3, 2003
    Publication date: December 9, 2004
    Inventors: Seung Jin Yoo, In Eung Kim, Hun Joo Hahm, Young Ho Park, Jeong Seok Na
  • Patent number: 6818531
    Abstract: A method for manufacturing vertical GaN light emitting diodes starts by forming a light emitting structure on a sapphire substrate, said light emitting structure including a first conductive GaN clad layer, an active layer and a second conductive GaN clad layer. The light emitting structure is divided into plural units so that the first conductive GaN clad layer of a thickness of at least approximately 100 Å remains. A conductive substrate is attached to the divided upper surface of the light emitting structures using a conductive adhesive layer. A lower surface of the sapphire substrate is irradiated by laser beam so that the sapphire substrate is removed from the unit light emitting structures. First and second contacts are formed respectively on the surfaces of the first conductive clad layer and the conductive substrate. Finally, the resulting structure is cut into plural unit light emitting diodes.
    Type: Grant
    Filed: July 3, 2003
    Date of Patent: November 16, 2004
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Seung Jin Yoo, In Eung Kim, Hun Joo Hahm, Young Ho Park, Jeong Seok Na
  • Patent number: 5917679
    Abstract: A negative pressure air bearing slider includes a slider body for flying above a surface of a recording disc during relative rotation of the recording disc. First and second projections extend from a lead portion of a principal surface of the slider body to define first and second air bearing surfaces, respectively, the first and second air bearing surfaces being spaced apart from each other in the lateral direction of said slider body. A third U-shaped projection extends from the principal surface and includes a curved front wall portion at least partially located between the first and second projections and first and second side wall portions extending from opposite ends of the curved front wall portion to a rear portion of the principal surface so as to define a rounded negative pressure cavity therein.
    Type: Grant
    Filed: August 22, 1997
    Date of Patent: June 29, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Ook Park, In-Eung Kim, In-Seop Jeong, Tae-Seok Park
  • Patent number: 5872685
    Abstract: A negative pressure air bearing slider includes a slider body for flying above a surface of a recording disc during relative rotation of the recording disc. First and second projections extend from a lead portion of a principal surface of the slider body to define first and second air bearing surfaces, respectively, the first and second air bearing surfaces being spaced apart from each other in the lateral direction of said slider body. A third U-shaped projection extends from the principal surface and includes a curved front wall portion at least partially located between the first and second projections and first and second side wall portions extending from opposite ends of the curved front wall portion to a rear portion of the principal surface so as to define a rounded negative pressure cavity therein.
    Type: Grant
    Filed: August 22, 1997
    Date of Patent: February 16, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Ook Park, In-Eung Kim, In-Seop Jeong, Tae-Seok Park
  • Patent number: 5753131
    Abstract: A magnetoresistive device with suppressed Barkhausen noise for restraining a cross-talk from adjacent tracks recorded on a magnetic medium, and a manufacturing method thereof. The width of the middle portion of a detection area in a magnetoresistive layer is thicker than that of shoulder portions. In the magnetoresistive device, the shoulder portions, which perform exchange coupling with the antiferromagnetic exchange layer, show a weak reaction to external magnetic field due to the high coercive force of the shoulder portions and a smaller thickness of the magnetoresistive layer than that of the detection area. Thus, when information on any one track of an information medium is read out through the detection area, the shoulder portions only slightly react to the external magnetic field of the adjacent tracks, i.e., the affect on the detection area by the shoulder portions is minimized.
    Type: Grant
    Filed: February 18, 1997
    Date of Patent: May 19, 1998
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Alexandre M. Choukh, In-eung Kim
  • Patent number: 5748414
    Abstract: A magnetoresistive (MR) element assembly with a longitudinal bias comprising a MR element, a bias coil, and spaced conductor leads is disclosed. The MR element is formed into an elongated ellipse-like shape with an elongated sense region and two end regions separated by a small nonmagnetic gap thereby reducing the longitudinal demagnetization field within the MR element. An easy axis of magnetization is formed by the MR element and oriented in a direction parallel to the main axis of the element. A bias coil is disposed about the MR element to produce a longitudinal bias field sufficient to maintain the elongated sense region in a single domain state. The elongated ellipse-like shaped MR element features a uniformly reduced demagnetization field for inhibiting the formation of a multi-domain state within the elongated sense region. The MR element assembly thus improves sensitivity of the MR head and suppresses Barkhausen noise in the output of the head.
    Type: Grant
    Filed: July 23, 1996
    Date of Patent: May 5, 1998
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: In Eung Kim, A. M. Choukh
  • Patent number: 5703738
    Abstract: A magneto-resistive (MR) element of a thin-film magnetic head comprises a three-layer structure. The three-layer structure comprises a layer of soft magnetic material, a thin non-magnetic decoupling layer and an MR layer, and has an ellipse-like C-shape with a gap in its back passive region. The axis of easy magnetization of the MR layer is parallel to the main axis of the ellipse-like C-shape three-layered structure. The MR layer is longitudinally biased by an exchange bias field developed by exchange coupling between the antiferromagnetic layer and the MR layer. The antiferromagnetic layer is deposited in direct contact only in the back passive region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductor leads are connected directly to the MR layer within the front active region to define a detection region, and through the antiferromagnetic layer in the back passive region.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 30, 1997
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: In-eung Kim, Alexandre M. Choukh
  • Patent number: RE39004
    Abstract: A negative pressure air bearing slider includes a slider body for flying above a surface of a recording disc during relative rotation of the recording disc. First and second projections extend from a lead portion of a principal surface of the slider body to define first and second air bearing surfaces, respectively, the first and second air bearing surfaces being spaced apart from each other in the lateral direction of said slider body. A third U-shaped projection extends from the principal surface and includes a curved front wall portion at least partially located between the first and second projections and first and second side wall portions extending from opposite ends of the curved front wall portion to a rear portion of the principal surface so as to define a rounded negative pressure cavity therein.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: March 7, 2006
    Assignee: SamSung Electronics Co., Ltd.
    Inventors: Ki-Ook Park, In-Eung Kim, In-Seop Jeong, Tae-Seok Park