Patents by Inventor In-Gab Hwang

In-Gab Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Switch circuit for monolithic microwave integrated circuit device
    Patent number: 5459428
    Abstract: Disclosed is a switch circuit which has a depletion mode n-channel MOSFET which can be used in a circuit allowing only a positive voltage to be supplied thereto, comprising a first D-FET having a gate for receiving an input signal, a drain for outputting an output signal and a source; a first resistor connected between the drain of the first D-FET and a positive voltage source to bias the drain of the first D-FET; a second D-FET having a gate connected to an intermittence controlling voltage source, a drain and a source connected to the positive voltage source and the source of the first D-FET 201, respectively; a second resistor connected between the gate of the second D-FET and a ground to bias the gate of the second D-FET; a constant-current source connected between each of the sources of the first and second D-FET and the ground; a bypass capacitor connected in parallel with the constant-current source and between the drain of the constant-current source and the ground to bypass an RF signal to the ground
    Type: Grant
    Filed: December 19, 1994
    Date of Patent: October 17, 1995
    Assignee: Electronics & Telecommunications Research Institute
    Inventors: Min-Gun Kim, Choong-Hwan Kim, In-Gab Hwang, Chang-Seok Lee, Hyung-Moo Park