Abstract: There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching a contact hole is removed and the environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process uniformity is improved.

Abstract: Field effect transistors (FETs) include an integrated circuit substrate having a surface, and a gate on the surface. A pair of recessed regions in the substrate are located beneath the surface. Respective ones of the recessed regions are located on respective opposite sides of the gate. Each of the recessed regions define a sidewall and a floor. An elevated source/drain structure on each of the recessed regions is at least as thick adjacent to the gate as remote from the gate. A gate spacer may be included between the gate and the elevated source/drain region. The gate spacer can comprise an insulating film. Preferably, the source/drain structure extends to the sidewall of the recessed region. The elevated source/drain structure is preferably free of a facet adjacent the gate. The present invention also relates to methods for fabricating a field effect transistors (FET) having an elevated source/drain structure.

Abstract: Disclosed is an improved apparatus for opening and closing a door, comprising a hydraulic hinge and a spring-type hinge. The hydraulic hinge includes a rotary member having a housing, a piston guide placed inside the housing, a rotary shaft disposed inside the piston guide and a piston screwed with the rotary shaft, and a fixed member having a housing, a cylinder placed inside the housing and having an oil outlet formed therethrough for allowing oil to pass therethrough, an outflow part formed on the top surface of the cylinder and having a plurality of support protrusions formed thereon, a head mounted on the top surface of the cylinder and an adjusting bolt screwed with the head in such a manner as to form an oil circulating passage therein.

Abstract: The present invention relates to a mechanical anti-snag device for a container crane, which comprises a main driving unit 100 for driving the starting terminals of ropes 104; auxiliary drums 202 respectively for winding the end terminals of said respective ropes 104; torque limiters 203, one end of which is installed respectively along the rotational shaft of said auxiliary drum 202; and auxiliary motors 301, each of which is connected to the rotational shaft of the other end of said torque limiter 203 respectively, wherein said ropes 104, between said main driving unit 100 and the auxiliary drums 20, are made to pass there through while holding up the corners of the head block 107 of the container crane. During the normal transportation of containers, the shaft of said auxiliary motor respectively is firmly fixed in place, and only when there is a need for controlling the trim, list and skew of the head block 107, the fixation as such is released.

Abstract: Field effect transistors (FETs) include an integrated circuit substrate having a surface, and a gate on the surface. A pair of recessed regions in the substrate are located beneath the surface. Respective ones of the recessed regions are located on respective opposite sides of the gate. Each of the recessed regions define a sidewall and a floor. An elevated source/drain structure on each of the recessed regions is at least as thick adjacent to the gate as remote from the gate. A gate spacer may be included between the gate and the elevated source/drain region. The gate spacer can comprise an insulating film. Preferably, the source/drain structure extends to the sidewall of the recessed region. The elevated source/drain structure is preferably free of a facet adjacent the gate. The present invention also relates to methods for fabricating a field effect transistors (FET) having an elevated source/drain structure.

Abstract: There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching a contact hole is removed and the environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process uniformity is improved.

Abstract: A gas supply apparatus, for use in a semiconductor device manufacturing process, provides a showerhead for evenly supplying various kinds of gases to a reaction chamber. The gas supplying apparatus for use in the formation of a thin film of a semiconductor device includes a first porous plate having a plurality of first holes formed throughout its surface, and a central bore formed at its center; and a second porous plate having first projections which are regularly formed throughout its central portion, and second projections which contain depressions continuously formed around the first projections. The gas supplying apparatus evenly distributes gas into the reaction chamber, thereby improving the uniformity of the film thickness to be grown on a substrate.