Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Abstract: An audio and video synchronization apparatus and method in a wireless communication network are provided. The audio and video synchronization apparatus includes a receiver that receives audio frames and video frames, a playback buffer that sequentially buffers the audio frames, a detector that determines whether the audio frames are synchronized with the video frames and adjusts a playback time of the video frames based on a playback time of the audio frames if it is determined the audio frames are not synchronized with the video frames.

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract: Provided are a multimedia data reproducing method and an apparatus for controlling a multimedia data reproducing speed based on a multimedia data packet receiving speed. The method including controlling a reproducing speed of the multimedia data based on a first time difference between times at which a plurality of packets including the multimedia data are respectively received and a second time difference between times to respectively reproduce the multimedia data corresponding to the plurality of packets; and reproducing the multimedia data at the controlled reproducing speed.

Abstract: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.

Abstract: A method for variably controlling a bit rate of video data through end-to-end channel status sensing in a Wireless Broadband (WiBro) network is provided. The method includes classifying wireless channel statuses of a transmission side and a reception side into normal and abnormal statuses during video data transmission; variably controlling and determining an encoding bit rate of a transmission side's encoder according to the classification result; and comparing the determined encoding bit rate with a Down Link Modulation & Coding Selection Level (DL MCS Level) which is a parameter of the reception side, so as to vary a final encoding bit rate of the transmission side.

Abstract: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 ?m to 1.5 ?m, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.

Abstract: The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract: Provided are thermoplastic organic fibers including a copolymerized resin of maleic anhydride with polypropylene, a method for preparing the same, a fiber composite board using the thermoplastic organic fibers as a matrix, and a method for manufacturing the fiber composite board. The thermoplastic organic fibers solve the problem of a limitation in improvement of strength caused by low wettability and adhesion between the thermoplastic organic materials used as a matrix according to the related art and reinforcing fibers.

Abstract: Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.

Abstract: Disclosed are a method of transmitting/receiving streaming data, to which a bit rate suitable for a mobile communication terminal is applied, in a communication system including a server and the mobile communication terminal, and a communication system therefor. The communication system include the server for converting multimedia data into the streaming data, and transmitting the streaming data to the mobile communication terminal; and the mobile communication terminal for, on receiving the streaming data from the server, collecting streaming parameters for use to determine the bit rate, and newly determining the bit rate.

Abstract: A method for compressing an extension field to be selectively included in a Real-time Transport Protocol (RTP) header is provided. It is determined whether an RTP header extension field is included in the RTP header. Information indicating a determination result is recorded. Profile information of the RTP header extension field is recorded. Total length information of the RTP header extension field is recorded. Information indicating whether changed data exists is recorded using a header extension information map.

Abstract: A method for performing an encrypted voice call between a first terminal and a second terminal supporting a Voice over Internet Protocol (VoIP)-based voice call. In the method, the first and second terminals generate and store a bio key using biographical (bio) information of a user in advance before performing a voice call, the first terminal sends a request for a voice call to the second terminal and establishing a session, the first and second terminals exchange and store a bio key stored in each terminal, and the first and second terminals generate a session shared key using the exchanged bio key and starting a Secure Real-time Transport Protocol (SRTP) session, and a restored bio key by acquiring bio information from received data. User authentication is then performed by comparing the bio key with the restored bio key.

Abstract: Disclosed is a method for controlling bit rates in consideration of wireless channel environment by an apparatus that transmits and receives moving picture encoding data via a wireless network. The apparatus for transmitting/receiving data through a wireless communication network connected to the apparatus including a channel state analyzing unit for analyzing a wireless channel environment, an encoding controller for generating control information containing information about a quantization parameter, skip or non-skip of frames indication, frame type indication, and use or non-use of an Error Resilient Tool (ERT) indication, in consideration of an analyzation result received from the channel state analyzing unit, a moving picture encoding unit for encoding incoming moving picture data, based on the control information received from the encoding controller; and a data transmitting/receiving unit for transferring the encoded moving picture data through the wireless channel to an exterior.

Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.

Abstract: Provided are methods of forming an optical coupler. The method includes forming a first waveguide and an in-plane tapered layer on a silicon layer, forming a mask with first and second openings. The first opening is formed between the in-plane tapered layer and the second opening, and the second opening extends from the first opening with a gradually narrowing width. Thereafter, a planar waveguide and a three-dimensional tapered layer are simultaneously formed in the first and second openings, respectively. The planar waveguide has a substantially uniform thickness, and the three-dimensional tapered layer has a thickness gradually increasing with a decrease of the width thereof.