Abstract: A method and electronic device for network connection and authentication is disclosed herein. A control unit is configured to detect authentication information necessary to access a communication network, and detect whether the authentication information corresponding to the communication network is stored in a profile storing at least the authentication information for at least the communication network. A radio frequency (RF) processing unit configured to couple to the communication network in response to detecting that the authentication information is authenticated by an authentication server for the communication network.

Abstract: The disclosure provides means and methods for increasing the activity of antibiotics. This enables the use of lower antibiotic dosages and the treatment of multidrug-resistant bacteria.

Abstract: Provided is an apparatus for a soil box experiment making a shape of a variable landslide surface. The apparatus for the soil box experiment making the shape of the variable landslide surface includes a soil box for realizing a slope on which landslide occurs, the soil box being inclinedly disposed and having an opened upper portion to accommodate soil therein, a base member disposed under the soil box to support the soil box, and a shape changing unit for changing a shape of a bottom surface of the soil box.

Abstract: The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the control gate and the first channel, configured to respectively surround the first channel, wherein the memory layer patterns are isolated from one another.

Abstract: The invention is directed to a process for extracting materials from biological material, which process is characterized in that the naturally occurring biological material is treated with an extractant consisting of a deep eutectic solvent of natural origin or a an ionic liquid of natural origin to produce a biological extract of natural origin dissolved in the said solvent or ionic liquid.

Abstract: A waterproof receptacle connector includes: a plurality of contacts, a support plate for partially covering and protecting the contacts, an insulator on which the contacts are installed; and a shell for containing the insulator on which the contacts are installed, wherein the shell has upper, lower, left, and right surfaces processed with no holes or pores, except for a front surface portion through which a plug connector is inserted and a rear surface portion through which the insulator is inserted, and, after the insulator is inserted through the rear surface portion of the shell, an interruption portion may be formed on the rear surface.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode.

Abstract: An electronic device and a method of an electronic device are provided. The electronic device includes a receiver, and a processor configured to receive first proximity service data through the receiver, wherein the first proximity service data comprises guide information that contains information indicating a device for transmitting second proximity service data and a transmission time point of the second proximity service data. The method of an electronic device includes receiving first proximity service data, wherein the first proximity service data comprises guide information that contains information indicating a device for transmitting second proximity service data and a transmission time point of the second proximity service data.

Abstract: An electronic device and a method of transmitting information in an electronic device a provided. The electronic device includes a communication unit that includes a first communication module and a second communication module, wherein the second communication module supports a low-power and short-range communication method; and a processor controls collection of information through the first communication module, and to transmit information related to the collected information through the second communication module.

Abstract: An apparatus is provided comprising: a communication interface; and at least one processor configured to: synchronize the apparatus with at least one electronic device, receive, via the communication interface, a signal from the electronic device, and determine a distance between the apparatus and the electronic device based on a transmission time and a reception time of the signal.

Abstract: An electronic device is provided. The electronic device includes an information exchange control module configured to receive a first frame from an external electronic device before being connected to the external electronic device. If the first frame received from the external device includes identification information indicating a plurality of electronic devices connected to the external electronic device, transmit, to the external electronic device, a second frame including data information requested to be transmitted from each of the plurality of electronic devices.

Abstract: An electronic device includes a memory configured to store identification information of an information server that is matched with an encryption key; and a controller configured to send, before the electronic device is connected with an external device, a request for network information of the external device to the external device in a network discovery frame encrypted using the encryption key matched with the identification information of the information server, and to receive the network information of the external device from the external device in the encrypted network discovery frame.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.

Abstract: An electronic device is provided. The electronic device includes a measurement module configured to measure received signal strength indications from a signal transmitted by access device that the electronic device is connected to, a generation module configured to generate correction data using at least some of the received signal strength indications, and a control module configured to control the communication connection of the electronic device based on a change in the correction data.

Abstract: This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a bottom buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled to the pipe channel layer and extended in a direction substantially perpendicular to the substrate, and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode includes a metal silicide layer formed within the groove. The electric resistance of the pipe connection gate electrode may be greatly reduced without an increase in a substantial height by forming the metal silicide layer buried in the substrate under the pipe connection gate electrode.