Abstract: A display panel includes a display area and a non-display area; the display area includes multiple first sub-pixel minimum repeating units; the multiple first sub-pixel minimum repeating units are sequentially and periodically arranged in a first direction, and in the first direction, a center distance between any two adjacent ones of the multiple first sub-pixel minimum repeating units is d1; the non-display area includes a first offset mark A1 and a second offset mark A2 arranged in the first direction; a center distance L1 between the first offset mark A1 and the second offset mark A2 is an integral multiple of the center distance d1 between the first sub-pixel minimum repeating units.

Abstract: The present disclosure provides a three-dimensional display device, a driving method and manufacturing method therefor.

Abstract: A control method of a display panel. The method includes the following steps: determining a target refresh frequency of the display panel; determining a data chopping rule adapted to the target refresh frequency according to the first mapping relationship; providing a data signal to the display panel according to a data chopping rule.

Abstract: Various examples of decoders and physical layout designs for non-volatile flash memory arrays in an analog neural system are disclosed. In one example, a system comprises a plurality of vector-by-matrix multiplication arrays in an analog neural memory system, each vector-by-matrix multiplication array comprising an array of non-volatile memory cells organized into rows and columns, wherein each memory cell comprises a word line terminal; a plurality of read row decoders, each read row decoder coupled to one of the plurality of vector-by-matrix multiplication arrays for applying a voltage to one or more selected rows during a read operation; and a shared program row decoder coupled to all of the plurality of vector-by-matrix multiplication arrays for applying a voltage to one or more selected rows in one or more of the vector-by-matrix multiplication arrays during a program operation.

Abstract: A memory device and a programming method thereof are provided. The programming method includes the following steps. According to a step value, based on an incremental step pulse programming scheme, multiple programming operations are performed for a selected memory page. In a setting mode, multiple program verify operations are respectively performed corresponding to the programming operations to respectively generate multiple pass bit numbers. In the setting mode, a pass bit number difference value of two pass bit numbers corresponding to two programming operations is calculated. In the setting mode, an amount of the step value is adjusted according to the pass bit number difference value.

Abstract: A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: A method for filling recessed features with a low-resistivity metal. The method includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, forming a nucleation enhancement layer on a sidewall of the first layer in the recessed feature and depositing a metal layer in the recessed feature by vapor phase deposition, where the metal layer is deposited on the second layer and on the nucleation enhancement layer. An initial metal layer may be selectively formed on the second layer in the recessed feature before forming the nucleation enhancement layer.

Abstract: In a method for operating a household cooking appliance, a camera records a pixel-based image from a cooking chamber of the household cooking appliance. The image is evaluated with exclusion of brightness values of associated pixels thereof.

Abstract: A method of complementing a map of a scene with 3D reference points including four steps. In a first step, data is collected and recorded based on samples of at least one of an optical sensor, a GNSS, and an IMU. A second step includes initial pose generation by processing of the collected sensor data to provide a track of vehicle poses. A pose is based on a specific data set, on at least one data set recoded before that dataset and on at least one data set recorded after that data set. A third step includes SLAM processing of the initial poses and collected optical sensor data to generate keyframes with feature points. In a fourth step 3D reference points are generated by fusion and optimization of the feature points by using future and past feature points together with a feature point at a point of processing. This second and fourth steps provides significantly better results than SLAM or VIO methods known from prior art, as the second and the fourth steps are based on recorded data.

Abstract: A current detection device for detecting a current on the sense line, and compensating for a grayscale of a pixel in accordance with a difference in the detected currents, so as to provide the pixels with uniform brightness. An integration operation is performed on a sense line through an integration sub-circuitry to obtain an output voltage, and the current on the sense line is determined in accordance with the output voltage.

Abstract: This application provides a shift register, a gate drive circuit, a display panel, and an electronic device. The shift register includes: a node control module, electrically connected to a first level signal receive end that receives a low level, a second level signal receive end that receives a high level, a first clock signal end, a second clock signal end, a first node, and a second node; an input module, electrically connected to the second clock signal end, a trigger signal input end, and the second node; a voltage regulator module, electrically connected to the second node, a third node, and the second clock signal end; and an output module, electrically connected to the first level signal receive end, the second level signal receive end, a drive signal output end, the first node, and the third node.

Abstract: Disclosed are a brightness control apparatus and method, and a display apparatus. The brightness control apparatus includes an optical detection circuit and an integrated circuit chip connected with the optical detection circuit. The optical detection circuit includes at least one transistor, configured to detect a light intensity of light to be detected corresponding to an environment where a display panel is located, and generate an electrical signal corresponding to the light intensity of the light to be detected.

Abstract: The present invention relates to a clamping device for a base station antenna and, more particularly, to a clamping device for a base station antenna, comprising: a guide arm unit which is arranged to extend horizontally to a side, so as to be perpendicular to a support pole arranged vertically; and a tilting unit which is arranged in the guide arm unit and adjusts the tilting angle with respect to the support pole by moving, based on a lower end portion of an antenna module having a fixed hinge position, an upper end portion of the antenna module in the horizontal direction in the guide arm unit. Thus, an advantage of improving the convenience of installation work and reliability of a product can be provided.

Abstract: A connector for plugging into a bus bar comprises a housing with a first side wall, a second side wall, and a connecting channel between the first side wall and the second side wall. A plurality of power terminals each having an electrical connection part are provided inside the connecting channel and are adapted to electrically connect with the bus bar. A plurality of grounding terminals are each disposed on the first side wall and the second side wall outside the connecting channel respectively. Each of the grounding terminals have an elastic first finger. An auxiliary support member is provided and supports the first finger.

Abstract: A signal generation apparatus includes a glitch rejection circuit including n m-stage inverters coupled in series, and configured to receive an input signal and perform an inverting operation on the input signal, based on a plurality of voltage signals, to generate an output signal and adjust switching threshold voltages of the m-stage inverters, based on the plurality of voltage signals, to generate the glitch-removed output signal, when a glitch occurs in the input signal, a level detection circuit to detect a logic level of the output signal provided from the glitch rejection circuit to generate a level detection signal and a complementary level detection signal, and a voltage signal generation circuit configured to receive the input signal, a complementary input signal, the level detection signal, and the complementary level detection signal to generate the plurality of voltage signals and provide the plurality of voltage signals to the glitch rejection circuit.

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

Abstract: A method for forming a semiconductor device is provided. The method comprises forming a device layer stack comprising an alternating sequence of lower sacrificial layers and channel layers, and a top sacrificial layer over the topmost channel layer, wherein the top sacrificial layer is thicker than each lower sacrificial layer; etching the top sacrificial layer to form a top sacrificial layer portion underneath the sacrificial gate structure; forming a first spacer on end surfaces of the top sacrificial layer portion; etching the channel and lower sacrificial layers while using the first spacer as an etch mask to form channel layer portions and lower sacrificial layer portions; etching the lower sacrificial layer portions to form recesses in the device layer stack, while the first spacer masks the end surfaces of the top sacrificial layer portion; and forming a second spacer in the recesses.

Abstract: An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.

Abstract: A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.