Abstract: A waterproof paint state determining method of a building using a satellite imagery according to an exemplary embodiment of the present disclosure includes receiving search information including information about a location in which a waterproof paint application state of a rooftop of a building is to be measured from a user; searching a search satellite imagery which is at least one satellite imagery corresponding to the search information from a satellite imagery DB including a plurality of satellite imagery data; detecting a rooftop area which is a waterproof paint application area of at least one building corresponding to the search information from the search satellite imagery, using a convolutional neural network (CNN) technique; and calculating a state index which is an index indicating a waterproof paint application state of at least one building, based on reference color information and color information of the rooftop area.

Abstract: An electronic device according to an embodiment of the present invention comprises a first conductive plate; and a second conductive plate which extends from the first conductive plate at a first angle to the first conductive plate, wherein the first conductive plate and the second conductive plate comprise a conductive member which forms a cavity opened in a first direction perpendicular to the first conductive plate; a first radiation unit which is disposed apart from the first conductive plate by a first distance in a first direction; a second radiation unit which is disposed apart from the first conductive plate by a second distance in a second direction opposite to the first direction; at least one wireless communication circuit which feeds electricity to the first radiation unit and the second radiation unit; and a processor which is electrically connected with the wireless communication circuit, the processor can be set to cause the wireless communication circuit to receive a signal of a first frequenc

Abstract: A three-dimensional semiconductor device includes a first gate group on a lower structure and a second gate group on the first gate group. The first gate group includes first pad regions that are: (1) lowered in a first direction that is parallel to an upper surface of the lower structure and (2) raised in a second direction that is parallel to an upper surface of the lower structure and perpendicular to the first direction. The second gate group includes second pad regions that are sequentially raised in the first direction and raised in the second direction.

Abstract: The present invention relates to a composition for a gel polymer electrolyte and a lithium secondary battery including a gel polymer electrolyte formed therefrom, and particularly, to a composition for a gel polymer electrolyte, which includes a lithium salt, a non-aqueous organic solvent including a glyme-based solvent, an oligomer represented by Formula 1 and having a polymerizable substituent, and a polymerization initiator, and a lithium secondary battery including a gel polymer electrolyte prepared by polymerization of the composition.

Abstract: The present invention provides a method of preparing an electrode for a lithium secondary battery which includes forming a first electrolyte layer by immersing an electrode current collector in a composition for forming the first electrolyte layer and applying a current, and forming a second electrolyte layer by immersing the electrode current collector having the first electrolyte layer formed thereon in a composition for forming the second electrolyte layer and applying a current, wherein one of the composition for forming the first electrolyte layer and the composition for forming the second electrolyte layer is a composition for forming an organic electrolyte layer, and another one is a composition for forming an inorganic electrolyte layer, and the composition for forming an inorganic electrolyte layer includes a compound represented by Formula 1.

Abstract: A memory module includes a memory device, a command/address buffering device, and a processing data buffer. The memory device includes a memory cell array, a first set of input/output terminals, each terminal configured to receive first command/address bits, and a second set of input/output terminals, each terminal configured to receive both data bits and second command/address bits. The command/address buffering device is configured to output the first command/address bits to the first set of input/output terminals. The processing data buffer is configured to output the data bits and second command/address bits to the second set of input/output terminals. The memory device is configured such that the first command/address bits, second command/address bits, and data bits are all used to access the memory cell array.

Abstract: The present disclosure relates to a method for removing residual purge gas in operating an active purge system and includes determining evaporation gas purge stop in a control unit, closing a PCSV mounted on a purge line connecting a canister and an intake pipe, and determining whether all of the evaporation gas flowed into the intake pipe is flowed into a combustion chamber, so that all of the evaporation gas flowed into an intake pipe during travelling can be flowed into and combusted in the combustion chamber.

Abstract: Disclosed are a mutant microorganism for producing succinic acid exhibiting improved activity of conversion of oxaloacetate to malate through the introduction of genes encoding a malate dehydrogenase, wherein an amino acid residue that interacts with a pyrophosphate moiety of NADH through an amide functional group of a main chain of malate dehydrogenase is glutamine (Gln), and a method of producing succinic acid using the same. The mutant microorganism producing succinic acid according to the present invention is capable of producing a high concentration of succinic acid at the highest productivity compared to other mutant microorganisms reported to date when the microorganism is cultured in a limited medium. In addition, the mutant microorganism is capable of producing succinic acid at higher productivity and product concentration through further advanced fermentation technology.

Abstract: A negative electrode and a rechargeable lithium battery, the negative electrode including a current collector; and a negative active material layer on at least one surface of the current collector, the negative active material layer including a carbon negative active material and a conductive agent, wherein the conductive agent includes at least one of a fiber-shaped conductive agent having a average length of about 1 ?m to about 200 ?m and a particle-shaped conductive agent having a average long diameter of about 1 ?m to about 20 ?m, and a DD (Degree of Divergence) value defined by Equation 1 is about 24 or greater: DD (Degree of Divergence)=(Ia/Itotal)*100??[Equation 1] wherein, in Equation 1, Ia is a sum of peak intensities at non-planar angles measured by XRD using a CuK? ray, and Itotal is a sum of peak intensity at all angles measured by XRD using a CuK? ray.

Abstract: Disclosed is an organic/inorganic composite porous film comprising: (a) inorganic particles; and (b) a binder polymer coating layer formed partially or totally on surfaces of the inorganic particles, wherein the inorganic particles are interconnected among themselves and are fixed by the binder polymer, and interstitial volumes among the inorganic particles form a micropore structure. A method for manufacturing the same film and an electrochemical device including the same film are also disclosed. An electrochemical device comprising the organic/inorganic composite porous film shows improved safety and quality.

Abstract: Embodiments of the present disclosure relate to a memory system, a memory controller, and a method of operating the same, and more particularly, to a memory system, a memory controller, and a method of operating the same, which calculate a read-attribute value, a write-attribute value, and a time-attribute value for a nonvolatile memory set and determine an operation mode of the nonvolatile memory set on the basis of at least one of the read-attribute value, the write-attribute value, and the time-attribute value, thereby enabling a host to predict whether or not a memory controller executes a background operation.

Abstract: Provided is a pellicle holder. The pellicle holder includes: an outer frame formed therein with a pellicle seating space; and a plurality of holding legs extending in a direction from the outer frame toward a center of the pellicle seating space, wherein the holding leg is extended or contracted in the extension direction and has one end on which a portion of a pellicle is mounted to support the pellicle.

Abstract: A memory system includes: a plurality of memory devices; a plurality of cores suitable for controlling the plurality of memory devices, respectively; and a controller including: a host interface layer for providing any one of the cores with a request of a host based on mapping between logical addresses and the cores, a remap manager for changing the mapping between the logical addresses and the cores in response to a trigger, a data swapper for swapping data between the plurality of memory devices based on the changed mapping, and a state manager for determining a state of the memory system depending on whether the data swapper is swapping the data or has completed swapping the data, and providing the remap manager with the trigger based on the state of the memory system and a difference in a degree of wear between the plurality of memory devices.

Abstract: Provided herein is a semiconductor memory device including a memory cell array, a peripheral circuit, an operation information storage, and control logic. The memory cell array may include a plurality of memory cells. The peripheral circuit may perform a read operation for setup information stored in the memory cell array. The operation information storage may store the setup information. The control logic may control a read operation of the peripheral circuit and a storage operation of the operation information storage. The control logic may control the peripheral circuit and the operation information storage such that a storage section in which the operation information storage stores first setup information and a read section in which the peripheral circuit reads second setup information from the memory cell array are at least partially overlapped with each other.

Abstract: Provided are a method of manufacturing a negative electrode for a lithium secondary battery, which includes: preparing a working electrode including a metal thin film; preparing a composition for forming a first solid electrolyte layer including an additive including at least one salt selected from salts represented by Chemical Formula 1 to Chemical Formula 5 and a glyme-based solvent; fabricating a half-cell including the working electrode, a counter electrode, a reference electrode, and the composition for forming a first solid electrolyte layer; forming a first solid electrolyte layer on the working electrode by operating the half-cell; and separating the working electrode on which the first solid electrolyte layer has been formed, and a negative electrode for a lithium secondary battery manufactured by the above-described method.

Abstract: A network server includes a webpage provider, a user monitor, and a content selector. The webpage provider is configured to provide to a user terminal a webpage including a first region and a second region arranged in a first direction in response to a request from the user terminal. The first region includes pieces of first content arranged in a second direction crossing the first direction, and the second region includes pieces of second content arranged in the second direction. The user monitor is configured to detect an action of the user terminal for the pieces of first content. The content selector is configured to search for pieces of third content related to the content for which the action of the user terminal is detected among the pieces of first content in a database, and to include the pieces of third content in the second region.

Abstract: The present invention relates to a polymer electrolyte for a secondary battery and a lithium secondary battery comprising the same, and particularly, to a polymer electrolyte for a secondary battery, in which mechanical properties, ionic conductivity, and electrical conductivity are improved by comprising a polymer and an electron-acceptor having at least one double bond, as a dopant, and a lithium secondary battery in which electrochemical stability at high temperature and high voltage is enhanced by comprising the polymer electrolyte.

Abstract: The present invention relates to a method of preparing a pouch type secondary battery, and particularly to a method of preparing a pouch type secondary battery which includes preparing a pouch type preliminary secondary battery by accommodating an electrode assembly in an inner space of a pouch type case, disposing a metallic ultrasonic member by being closely attached to both surfaces of the pouch type preliminary secondary battery, injecting a composition for a gel polymer electrolyte into the pouch type preliminary secondary battery, applying ultrasonic vibration to the pouch type preliminary secondary battery while pressurizing the pouch type preliminary secondary battery using the ultrasonic member, performing formation on the pouch type preliminary secondary battery, curing the composition for a gel polymer electrolyte, and degassing, wherein the ultrasonic member is maintained at a temperature of 30° C. to 80° C.

Abstract: A memory system with at least one namespace includes a memory device and a controller. The memory device includes a plurality of single-level cell (SLC) buffers and a plurality of memory blocks, wherein each memory block includes a plurality of memory cells, each memory cell storing multi-bit data, and is allocated for a respective one of a plurality of zones, wherein each of the at least one namespace is divided by at least some of the plurality of zones. The controller is configured to receive a program request related to at least one application program executed by a host, to determine at least one zone designated by the at least one application program as an open state, and to control the memory device to perform a program operation on at least one memory block allocated for an open state zone.

Abstract: An accelerator, an operation method of the accelerator, and an accelerator apparatus including the accelerator are disclosed. The operation method includes receiving one or more workloads assigned by a main processor, performing at least one operation involved with the workloads in an internal memory of the accelerator or in a direct memory access (DMA) configured to control data input to or output from the internal memory, and providing a result of performing the at least one operation.