Abstract: Disclosed is a motor driving apparatus including: a motor; an inverter including a switching element for driving the motor; a controller for controlling the switching element; a resolver including an excitation winding and a detection winding; and a resolver chip applying an excitation signal to the excitation winding by inputting a periodic signal from the controller, and receiving a feedback signal from the detection winding, wherein the resolver chip determines the number of rotations of the motor based on a change in a pulse width of a detection signal resulting from a comparison between a voltage of the feedback signal and a preset voltage, and output a signal to the inverter for setting an inertial driving control mode according to the number of rotations of the motor in a failure state of the controller.

Abstract: A vehicle body structure includes a roof side assembly connecting upper end portions of pillars of a vehicle body in a longitudinal direction of the vehicle body, the roof side assembly forming an A-pillar itself, a mounting bracket fixing the roof side assembly to a lower vehicle body, and an external garnish coupled to an outside of the roof side assembly, wherein the roof side assembly includes a pipe extending in the longitudinal direction of the vehicle body, the pipe including a closed cross-section, and a molding member injection-molded with the pipe inserted thereinto.

Abstract: A vehicle body structure includes: a roof side assembly connecting upper ends of pillars of a vehicle body along the forward/backward direction of the vehicle body, the roof side assembly constituting an A-pillar of the vehicle body; and an outer garnish coupled to the outside of the roof side assembly, wherein the roof side assembly includes: a pipe having a closed cross-section shape and elongated in the forward/backward direction of the vehicle body so as to form a closed section; an upper reinforcement member coupled to the upper side of the pipe and elongated in the forward/backward direction of the vehicle body; a lower reinforcement member coupled to the lower side of the pipe and elongated in the forward/backward direction of the vehicle body; and an inner reinforcement member coupled to the vehicle body inner side of the pipe and elongated in the forward/backward direction of the vehicle body.

Abstract: A gadget for retroreflected signal measurement is disclosed. The gadget for measuring the retroreflected signal includes a partitioning wall; a portable terminal receiving portion disposed on one surface of the partitioning wall; a biosensor receiving portion disposed on the other surface of the partitioning wall and constructed to receive a biosensor therein; a light exit channel defined in the partitioning wall and at one side thereof; and a light-receiving channel adjacent to the light exit channel and defined in the partitioning wall, wherein light passes through the light exit channel and then is reflected from the biosensor, and then is incident into the light-receiving channel.

Abstract: The present disclosure proposes a new technical method for realizing a specific configuration for dynamically/optimally controlling an RF channel in consideration of both throughput of a cell and energy saving in an O-RAN system and realizing an interface operation between O-RAN equipment related thereto, enabling dynamic/optimal control of the RF channel of the cell according to the situation.

Abstract: The present invention relates to a novel electrolyte and a secondary battery including the same. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

Abstract: A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.

Abstract: An embodiment solid electrolyte includes a first compound and a second compound. The first compound is represented by a first chemical formula Li7-aPS6-a(X11-bX2b)a, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, and wherein 0<a?2 and 0<b<1, and the second compound is represented by a second chemical formula Li7-cP1-2dMdS6-c-3d(X11-eX2e)c, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, wherein M represents Ge, Si, Sn, or any combination thereof, and wherein 0<c?2, 0<d<0.5, and 0<e<1.

Abstract: A washing machine comprises a housing, a drum rotatably disposed inside the housing, a driving shaft configured to transfer a rotational force from a driving motor of the washing machine to the drum, and a driving shaft flange configured to connect the driving shaft to the drum. The driving shaft flange comprises a first surface, a second surface substantially parallel to the first surface, wherein the first surface and the second surface are spaced apart from each other by a predetermined distance in the vertical direction, and an extension portion formed perpendicular to the first surface and the second surface and connecting the first surface to the second surface. An edge of the first surface and an edge of the second surface and an edge of the extension portion are substantially aligned in vertical direction of the drum.

Abstract: A pouch type all-solid-state battery including a reference electrode is disclosed. In the all-solid-state battery, a potential variation of each electrode is accurately measured because the ion transfer path between the reference electrode and a positive electrode/negative electrode is short. Accordingly, the all-solid-state battery secures a desired cell performance while having battery specifications similar to actual battery specifications.

Abstract: An error processing circuit includes: a first H matrix calculation circuit configured to calculate a first H matrix and upstream data to generate a partial first parity, during an encoding operation; a second H matrix calculation circuit configured to calculate a second H matrix and the upstream data to generate a second parity, during the encoding operation; and a parity calculation circuit configured to sum the partial first parity and the second parity to generate a first parity, during the encoding operation.

Abstract: A secondary battery having improved impact resistance is provided. The secondary battery includes a battery case comprising an electrode assembly and an electrolyte accommodated in an accommodation part of the battery case. The secondary battery satisfies following Equation (1): Equation (1): W/S?42. In Equation (1), W is an amount of electrolyte per unit capacity of the secondary battery [unit: g/Ah], and S is a product of a total length [unit: m] and a full width [unit: m] of the electrode assembly.

Abstract: Disclosed herein are a logical qubit execution apparatus and method. The logical qubit execution apparatus may be configured to execute, by a logical execution layer, a quantum circuit including requested logical qubits using a lattice surgery operation, generate, by the logical execution layer, measurement results of the logical qubits by combining measurement results of logical Pauli frames, generate, by a physical execution layer, a physical qubit circuit by converting a logical qubit operation corresponding to the measurement results of the logical qubits into a physical qubit operation, and measure, by the physical execution layer, results of an operation on physical Pauli frames by executing the physical qubit circuit.

Abstract: An apparatus for predicting a traffic speed and a method thereof are provided. The apparatus includes an input device that receives traffic speed sequences of a plurality of links and a controller that detects a spatio-temporal relationship between traffic speeds of the plurality of links and predicts a future traffic speed of a target link based on the spatio-temporal relationship between the traffic speeds of the plurality of links.

Abstract: Disclosed is a method for controlling the supply of solid silicon to a preliminary crucible of an ingot growth apparatus for maintaining a constant amount of molten silicon in the preliminary crucible by measuring the height of the molten silicon in the preliminary crucible.

Abstract: A semiconductor manufacturing facility includes: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor.

Abstract: A silicon-carbon containing electrode material includes a porous carbon structure including pores, and a silicon-containing coating formed on the porous carbon structure. A volume ratio of mesopores is 70% or more based on a total pore volume of the porous carbon structure. A weight ratio of silicon is 30 wt % or more based on a total weight of the electrode material. A high-capacity secondary battery is effectively implemented by using silicon-carbon containing electrode material.

Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.

Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.