Abstract: Provided are a CVD apparatus and a method of manufacturing a light emitting device using the same. The CVD apparatus includes a chamber body including a susceptor having at least one pocket part having a wafer stably mounted therein; a chamber cover provided with the chamber body to open or close the chamber body and having a reaction space between the susceptor and the chamber cover; a reactive gas supplier supplying the reactive gas into the reaction space to allow the reactive gas to flow across a surface of the susceptor; and a non-reactive gas supplier supplying a non-reactive gas into the reaction space to allow the non-reactive gas to flow across a surface of the chamber cover between the susceptor and the chamber cover so as to prevent the reactive gas from contacting the surface of the chamber cover.

Abstract: Provided are a CVD apparatus and a method of manufacturing a light emitting device using the same. The CVD apparatus includes a chamber body including a susceptor having at least one pocket part having a wafer stably mounted therein; a chamber cover provided with the chamber body to open or close the chamber body and having a reaction space between the susceptor and the chamber cover; a reactive gas supplier supplying the reactive gas into the reaction space to allow the reactive gas to flow across a surface of the susceptor; and a non-reactive gas supplier supplying a non-reactive gas into the reaction space to allow the non-reactive gas to flow across a surface of the chamber cover between the susceptor and the chamber cover so as to prevent the reactive gas from contacting the surface of the chamber cover.

Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Abstract: A method of displaying time of a VCR including steps for checking whether current time data is received, determining states of the received current time data corresponding to a duty cycle at times when the current time data is received and converting the determined logic states of the current time data to current time. The current time is then displayed. The current time is superimposed on a video signal and a resultant superimposed signal is displayed. The resultant superimposed signal is recorded when the user requires recording of the current time together with the video signal.