Abstract: A connector having a shield structure includes a housing, an outer case connected to the housing, an inner case disposed between the housing and the outer case, and a shield structure surrounding the inner case. The connector includes a first cable having a first line, a first inner cover surrounding the first line, and a first cable shield surrounding the first inner cover and connected to the shield structure. The connector includes a second cable having a second line, a second inner cover surrounding the second line, and a second cable shield surrounding the second inner cover and connected to the shield structure. The connector includes a ground terminal electrically connecting the first cable shield and the second cable shield to a first ground, and a ground cable connected to the ground terminal and electrically connecting the first cable shield and the second cable shield to a second ground.

Abstract: An apparatus for sensing voltage information of a fuel cell includes: a sensing unit configured to sense voltages of each cell and all cells included in a fuel cell; a controller configured to control the sensing unit to sense the voltages of each cell and all the cells of the fuel cell according to a command of an upper controller, or to transmit information of the sensed voltages of each cell and all the cells to the upper controller; and the upper controller configured to detect an error cell by calculating output power of the fuel cell based on the information of the voltages received from the controller, to substantially prevent damage to a surrounding cell by stopping an operation of the error cell, and to control the output power in real time in correspondence with a state of the fuel cell.

Abstract: A system selecting a process key factor in a commercial chemical process, includes: a data extraction unit that extracts tag data in units of a set period; an outlier discrimination unit that discriminates and aggregates outliers by tag by using an outlier extraction reference master; an outlier processing unit that generates an input mart draft excluding the outliers; a derived variable generation unit that generates derived variables for each tag, and generates an advanced input mart having the derived variable added thereto; a yield calculation unit that backs up the result of calculation of a yield by realizing a target value via exclusion and correction of the outliers; and a key factor extraction unit that extracts a yield key factor by calculating importance of each tag, and backs up importance data for each tag.

Abstract: A system for predicting process changes by using key factors in a commercial chemical process, includes: a key factor extraction and individual tag importance backup unit that extracts yield key factors by calculating the importance of each tag, and backs up importance data for each tag; and a yield prediction model training and yield prediction performing unit that performs yield prediction model training by using the importance of each tag accumulated in the key factor extraction and individual tag importance backup unit, and performs yield prediction so as to output a yield prediction result, evaluates performance, and selects an optimal prediction model.

Abstract: A coil component includes a body having one surface, and one end surface and the other end surface, respectively connected to the one surface and opposing each other, a support substrate embedded in the body, and a coil portion disposed on the support substrate and including first and second lead-out patterns respectively exposed from surfaces of the body. The first lead-out pattern is exposed from the one surface of the body and the one end surface of the body. The second lead-out pattern is exposed from the one surface of the body and the other end surface of the body. The body includes an anchor portion disposed in each of the first and second lead-out patterns.

Abstract: The present disclosure relates to an apparatus and method for performing generation of driving information and driver-specific start control for a two-wheeled vehicle on the basis of biometric recognition. Specifically, the present disclosure relates to an apparatus and method for controlling start of a two-wheeled vehicle limitedly to a driver identified on the basis of biometric recognition and generating driving information of the identified driver in relation to sudden turns, sudden acceleration, sudden stops, impact occurrence, speed limit violation, and the like while driving.

Abstract: The present disclosure relates to an apparatus and method for performing generation of driving information and driver-specific start control for a two-wheeled vehicle on the basis of biometric recognition. Specifically, the present disclosure relates to an apparatus and method for controlling start of a two-wheeled vehicle limitedly to a driver identified on the basis of biometric recognition and generating driving information of the identified driver in relation to sudden turns, sudden acceleration, sudden stops, impact occurrence, speed limit violation, and the like while driving.

Abstract: In a method for manufacturing a display panel according to an embodiment, a first anisotropic conductive layer is formed by ejecting a first anisotropic conductive layer forming material in order to bond the circuit board to the display panel, a reinforced curing layer is formed by ejecting a reinforced curing layer forming material onto a side surface of the first anisotropic conductive layer, a second anisotropic conductive layer is formed by ejecting a second anisotropic conductive layer forming material to an inner side of the second anisotropic conductive layer and the reinforced curing layer in order to bond the display drive integrated circuit, and a pixel is formed by ejecting a material for pixel printing to an inner side of the second anisotropic conductive layer for fixing the display drive integrated circuit.

Abstract: The present disclosure relates to an apparatus and a method for providing an information & communication technology (ICT)-based driver-specific evaluation analysis and compensation platform for two-wheeled vehicle driving. Particularly, the present disclosure relates to an apparatus and a method for providing a platform which creates mid-traveling driving information about a driver identified on the basis of biometrics, and which evaluates the driver on the basis of the driving information and then pays compensation to the driver according to evaluation results.

Abstract: The present disclosure relates to an apparatus and a method for providing an information & communication technology (ICT)-based driver-specific evaluation analysis and compensation platform for two-wheeled vehicle driving. Particularly, the present disclosure relates to an apparatus and a method for providing a platform which creates mid-traveling driving information about a driver identified on the basis of biometrics, and which evaluates the driver on the basis of the driving information and then pays compensation to the driver according to evaluation results.

Abstract: According to an exemplary embodiment, a microneedle probe device for measuring a sap flow rate of a plant includes: a substrate, of which at least a part is inserted into a plant, and a thickness and a width are microscales; a single metal wire provided on the substrate; a power source, which applies a current to the metal wire for a predetermined time and heats the metal wire; and a processor, which calculates a flow rate of sap through a movement of heat generated in the metal wire according to a flow of the sap within the plant.

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

Abstract: An integrated circuit device includes a substrate from which a plurality of fin-type active regions protrude, the plurality of fin-type active regions extending in parallel to one another in a first direction, and a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction, wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a pair of gate structures from among the plurality of gate structures, and the plurality of fin-type active regions include a plurality of first fin-type regions and a plurality of second fin-type regions.

Abstract: An integrated circuit device includes a substrate having a first region and a second region, a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction, a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction, a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction, and a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures.

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

Abstract: An integrated circuit device includes a substrate including a first device region and a second device region; a first fin separation insulating portion on the first device region; a pair of first fin-type active regions spaced from each other with the first fin separation insulating portion therebetween in the first device region and collinearly extending in a first horizontal direction; a second fin separation insulating portion extending in a second horizontal direction over the first device region and the second device region; and a pair of second fin-type active regions spaced from each other with the second fin separation insulating portion therebetween and collinearly extending in the first horizontal direction, wherein the first fin separation insulating portion and the second fin separation insulating portion vertically overlap each other.

Abstract: Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate. The semiconductor device includes first and second source/drain regions in the semiconductor substrate. Moreover, the semiconductor device includes a multi-layer device isolation region in the semiconductor substrate between the first and second source/drain regions. The multi-layer device isolation region includes a protruding portion that protrudes away from the semiconductor substrate beyond respective uppermost surfaces of the first and second source/drain regions.