Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.

Abstract: Disclosed is a technology relating to a method for fabricating a multilayer structure. In the method for fabricating the multilayer structure according to the disclosed embodiment, a first material layer including at least one atomic layer is deposited using a first source gas, which includes a first component, and an oxygen-containing reactive gas which is reactive with the first source gas. On the first material layer, a second material layer including at least one atomic layer is deposited using a second source gas, which includes a second component different from the first component, and an oxygen-containing reactive gas which is reactive with the second source gas. The step of depositing the first material layer and the step of depositing the second material layer constitute one cycle, and the cycle is performed at least once.

Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.

Abstract: In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.

Abstract: Provided is a thin film vapor deposition method capable of implementing ALD or cyclic CVD without the need for operating a valve and vapor depositing a thin film with higher productivity over the conventional method. A thin film vapor deposition apparatus includes a substrate supporting portion having a plurality of substrate mounting portions; and a gas jetting portion comprising a source gas supplier, a reaction gas supplier, and a mixture gas supplier, provided at the upper portion of the substrate supporting portion in which the source gas supplier, the reaction gas supplier and the mixture gas supplier are radially placed, wherein the substrate supporting portion and the gas jetting portion are provided so as to be able to relatively rotate.

Abstract: Provided is a thin film vapor deposition method capable of implementing ALD or cyclic CVD without the need for operating a valve and vapor depositing a thin film with higher productivity over the conventional method. A thin film vapor deposition apparatus includes a substrate supporting portion having a plurality of substrate mounting portions; and a gas jetting portion comprising a source gas supplier, a reaction gas supplier, and a mixture gas supplier, provided at the upper portion of the substrate supporting portion in which the source gas supplier, the reaction gas supplier and the mixture gas supplier are radially placed, wherein the substrate supporting portion and the gas jetting portion are provided so as to be able to relatively rotate.