Abstract: The present invention relates to a context-based QA generation architecture, and an object of the present invention is to generate diverse QA pairs from a single context. To achieve the object, the present invention includes a latent variable generating network including at least one encoder and an artificial neural network (Multi-Layer Perceptron: MLP) and configured to train the artificial neural network using a first context, a first question, and a first answer, and generate a second question latent variable and a second answer latent variable by applying the trained artificial neural network to a second context, an answer generating network configured to generate a second answer by decoding the second answer latent variable, and a question generating network configured to generate a second question based on a second context and the second answer.

Abstract: The present invention relates to a fan shroud provided in a cooling module, and an object of the present invention is to provide a fan shroud assembly in which a baffle is selectively provided in some sections between a plurality of fixing members provided in a ventilation port of a fan shroud, thereby reducing deterioration in rigidity and durability of the fan shroud and effectively reducing BPF noise.

Abstract: A method of a terminal may comprise: receiving, from a CU of a base station, configuration information of one or more candidate cells and configuration information for measurement; performing L1 measurement on the candidate cells based on the configuration information for measurement; acquiring uplink synchronization for the candidate cells by performing an uplink synchronization management procedure for the candidate cells based on the configuration information of the candidate cells; reporting a result of the L1 measurement to a DU of the base station; receiving, from the DU of the base station, information on a target cell, being the target cell to switch among the candidate cells, based on the result of the L1 measurement; and applying the uplink synchronization acquired through the uplink synchronization management procedure to the target cell.

Abstract: A railess variable seatback type rear seat includes: a linear movement device configured to convert a rotation of a motor into a linear movement; a sliding movement device configured to convert the linear movement into a sliding movement in which a seat cushion is pushed forward or backward; and a reclining angle change device configured to convert the sliding movement into a reclining movement, and to fold a seatback, which is connected to the seat cushion, forward or to recline the seatback backward.

Abstract: The method for preparing a super absorbent polymer according to the present disclosure has a feature that it is possible to reduce the generation of a fine powder during production of the super absorbent polymer while maintaining excellent physical properties of the super absorbent polymer, including centrifuge retention capacity (CRC) and vortex removal time.

Abstract: A semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and a method of cleaning a semiconductor wafer using the cleaning composition are provided. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

Abstract: The present invention relates to a polyimide precursor, a polyimide precursor solution, a polyimide film, a manufacturing method thereof, and a use thereof. The polyimide precursor according to the present invention may provide a polyimide film that has excellent heat resistance and satisfies transparency and a low coefficient of linear thermal expansion, and thus the polyimide film will be usefully applicable in the field of flexible displays requiring high dimensional stability.

Abstract: Disclosed is a 5G NR antenna device. An antenna module includes an antenna material formed of a metal material and having a semi-planar inverted-F antenna (PIFA) structure, and a support formed in the shape of a hexahedron with side and bottom faces that are bent from the antenna material by stamping, wherein the support and the antenna material are formed as an integral body.

Abstract: A semiconductor device includes a substrate, a bit line conductive layer disposed on the substrate and extending in a first lateral direction substantially parallel to a surface of the substrate, first and second channel structures disposed on the bit line conductive layer to be spaced apart from each other in the first lateral direction, first and second gate dielectric layers disposed on side surfaces of the first and second channel structures over the substrate, first and second gate line conductive layers disposed on the first and second gate dielectric layers, respectively, the first and second gate line conductive layers common to the first and second channel structures, respectively, and extending in a second lateral direction perpendicular to the first lateral direction and substantially parallel to the surface of the substrate, and first and second storage node electrode layers disposed over the first and second channel structures, respectively.

Abstract: Provided are a novel crosslinking agent compound, and a superabsorbent polymer prepared by using the same. More particularly, provided are a crosslinking agent compound having a novel structure, which exhibits excellent crosslinking property and thermal degradability, and a superabsorbent polymer prepared by using the same.

Abstract: A degassing apparatus for a secondary battery, and a degassing method using same, is provided. The degassing apparatus includes a drive motor and a jig arm configured to pressurize a first surface of a gas pocket of a battery cell and a second surface opposite the first surface by controlling a separation distance by the operation of a driving motor. The degassing apparatus is capable of performing an effective degassing and sealing process for the battery cell without positional movement of the battery cell during cell activation or after cell activation.

Abstract: A computing method and device with data sharing are provided. The method includes loading, by a loader, input data of an input feature map stored in a memory in loading units according to a loading order, storing, by a buffer controller, the loaded input data in a reuse buffer of an address rotationally allocated according to the loading order, and transmitting, by each of a plurality of senders, to an executer respective input data corresponding to each output data of respective convolution operations among the input data stored in the reuse buffer, wherein portions of the transmitted respective input data overlap other.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium composite transition metal oxide has a layered crystal structure of space group R3m, includes the nickel (Ni) in an amount of 60 mol % or less based on a total amount of transition metals, includes the cobalt (Co) in an amount greater than an amount of the manganese (Mn), and is composed of single particles.

Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: Provided is a thermoelectric module. The thermoelectric module includes a thermoelectric element including a first substrate, a first electrode disposed on the first substrate, a semiconductor structure disposed on the first electrode, a second electrode disposed on the semiconductor structure, and a second substrate disposed on the second electrode, a heat sink disposed on the second substrate, and an adhesive layer configured to bond the second substrate to the heat sink. The heat sink has a shape in which predetermined patterns are regularly repeated and connected. Each pattern includes a first surface disposed opposite to the second substrate, a in second surface which extends upward from one end of the first surface, a third surface which extends from the second surface to face the second substrate, and a fourth surface which extends upward from the other end opposite to the one end of the first surface and is connected to a third surface of an adjacent pattern.

Abstract: In this specification, a image decoding method is disclosed. The image decoding method of the present invention comprises, decoding block partition information of a current block included in a current picture, determining a partitioning scheme for the current block according to the block partition information and partitioning the current block using the partitioning scheme determined, wherein the partitioning scheme is determined according to whether the current block includes a boundary of the current picture.

Abstract: A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.

Abstract: Provided are an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device comprising the organic electronic element, wherein the organic material layer comprises each compound represented by Formula 1, Formula 2, or Formula 3, thereby the driving voltage of the organic electronic element can be lowered and the luminous efficiency and lifespan can be improved.