Abstract: Provided is a diol compound of the following Chemical Formula 1, a polycarbonate comprising the diol compound, and a method of producing the polycarbonate:

Abstract: Disclosed are a cooling device and a vehicle including the same. The cooling device according to one aspect of the present disclosure includes a housing part having a first hole formed at one side thereof and a second hole formed at the other side thereof, a heat exchange part accommodated in an internal space of the housing part and having one side communicating with the first hole and the other side communicating with the second hole, a thermoelectric element part provided above the heat exchange part, and a radiational cooling part provided above the thermoelectric element part and at least partially exposed to the outside.

Abstract: A semiconductor package includes a base including a first bonding structure; and a first semiconductor chip, including a second bonding structure, the second bonding structure being coupled to the first bonding structure of the base, wherein the first bonding structure includes: a test pad; a first pad being electrically connected to the test pad; and a first insulating layer, wherein the second bonding structure includes: a second pad being electrically connected to the first pad; and a second insulating layer being in contact with the first insulating layer, and wherein at least a portion of the test pad is in contact with the second insulating layer.

Abstract: A semiconductor package includes a base structure having a base pad, a first semiconductor chip on the base structure, and having a first connection pad bonded to the base pad, a first bonding structure including an base insulation layer of a base structure and a first lower insulation layer of the first semiconductor chip bonded to the base insulation layer, a second semiconductor chip on the first semiconductor chip, and having a second connection pad connected to the first through-electrode, and a second bonding structure including a first upper insulation layer of the first semiconductor chip, and a second lower insulation layer of the second semiconductor chip bonded to the first upper insulation layer, and the first upper insulation layer has a dummy insulation portion extending onto the base structure around the first semiconductor chip.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a source structure formed on a base, an etch prevention layer formed on the source structure, bit lines, a stack structure located between the etch prevention layer and the bit lines and including conductive layers and insulating layers that are alternately stacked on each other, and a channel structure passing through the stack structure and the etch prevention layer, wherein a lower portion of the channel structure is located in the source structure and a sidewall of the lower portion of the channel structure is in direct contact with the source structure.

Abstract: The present invention relates to an air purifier in which vertical rotation and horizontal rotation are performed simultaneously and independently and which has a stable structure.

Abstract: A method of manufacturing a semiconductor device according to an embodiment of the present disclosure may include forming a first sacrificial layer including a first portion and a second portion having a thickness thicker than a thickness of the first portion, forming a stack including first material layers and second material layers alternating with each other on the first sacrificial layer, forming a channel structure passing through the stack and extending to the first portion, forming a slit passing through the stack and extending to the second portion, removing the first sacrificial layer through the slit to form a first opening, and forming a second source layer connected to the channel structure in the first opening.

Abstract: A semiconductor device, and a method of manufacturing a semiconductor device, includes first stack structures enclosing first channel structures and spaced apart from each other. The first channel structures are spaced apart from each other at a first distance in each of the first stack structures and the first stack structures are spaced apart from each other at a second distance.

Abstract: In described examples, a method includes receiving, by a power delivery (PD) controller, a first sensed voltage, while the PD controller is producing a first control signal and in response to determining that the first sensed voltage passes a threshold voltage, starting, by the PD controller, a timer, where the threshold voltage is a first threshold, a second threshold, or a third threshold. The method also includes during a time period of the timer, producing, by the PD controller, the first control signal and during the time period of the timer, receiving, by the PD controller, a second sensed voltage. Additionally, the method includes after expiration of the timer, producing, by the PD controller, a second control signal based on the second sensed voltage.

Abstract: An anode poison reduction system and method for a fuel cell vehicle. The system includes a monitoring device configured to monitor a state and performance of a fuel cell, and a controller configured to perform first control of controlling output of the fuel cell or air supply when an anode poisoning possibility condition is satisfied as a monitoring result by the monitoring device, and configured to perform second control of supplying air in the air line to the anode through the connection line when an anode poisoning generation condition is satisfied.

Abstract: A semiconductor device according to an embodiment of the present disclosure may include: a stack structure including a plurality of first conductive patterns and a plurality of dielectric layers, which are alternately stacked, the stack structure having a stepped structure such that any one of the first conductive patterns further protrudes than the first conductive pattern positioned immediately above it; a plurality of second conductive patterns which are respectively formed over protrusions of the first conductive patterns; a plurality of contact plugs which overlap the plurality of second conductive patterns, respectively, and pass through the overlapping second conductive patterns and the stack structure; and a sealing layer pattern which is interposed between the first conductive patterns and the contact plugs and separates the first conductive patterns from the contact plugs.

Abstract: A display device may include a substrate, and a display element layer disposed on the substrate and including a light emitting element that emits light in a display direction. The display element layer may include a first contact electrode electrically connected to the light emitting element, a second contact electrode electrically connected to the light emitting element, and a bank pattern having a shape extending in the display direction. At least one of the first contact electrode, the second contact electrode, and the bank pattern may include a transparent conductive polymer.

Abstract: Provided herein may be a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device may include a stacked body including alternately stacked interlayer insulating layers and conductive patterns, and channel structures penetrating the stacked body. Each of the channel structures may include a channel layer vertically extending up to the height of the upper portion of at least one upper conductive pattern disposed uppermost, among the conductive patterns, a memory layer surrounding the channel layer and extending from the lower interlayer insulating layer to the height of the middle portion of the upper conductive pattern, and a doped semiconductor pattern disposed above the channel layer and the memory layer.

Abstract: Methods and apparatuses for embedding data. The method for embedding data includes: acquiring a pretrained embedding model; generating a prompt associated with a data sample through a prompt encoder, the prompt encoder being lighter than the embedding model; generating an embedding representation of the data sample by inputting the prompt and the data sample to the embedding model; calculating a task loss by performing a predefined task by using the embedding representation; and updating the prompt encoder based on the task loss.

Abstract: The present disclosure provides systems and methods for progressively transitioning the playback volume based on a background noise level. The device may have a predetermined quantity of volume levels between a minimum volume and a maximum volume. The volume levels may be spaced by predetermined increments, such that there is a predefined difference between adjacent volume levels. A digital gain may be used to adjust the volume level and an analog gain may allow for the playback volume to be adjusted to an amount between adjacent volume levels. The playback volume may progressively transition within the predefined volume levels by an amount less than the predetermined difference between adjacent volume levels. This smaller amount may be the analog gain.

Abstract: A power plant thermal-management-system control method for controlling thermal management systems in PMCs is provided. The thermal management systems are operated based on coolant temperatures of the PMCs of a power plant of a fuel cell vehicle to prevent the temperatures of the PMCs from deviating from a reference range, which in turn prevents degradation of fuel cells.

Abstract: A motor driving apparatus which drives a motor having a plurality of windings corresponding to a plurality of phases includes: a first inverter having a plurality of first switching elements and connected to a first end of each winding; a second inverter having a plurality of second switching elements and connected to a second end of each winding; and a controller configured to control pulse width modulation, by distributing a preset voltage command of the motor into a voltage command of the first inverter and a voltage command of the second inverter at the same rate and by generating duties of the first switching elements, wherein the controller determines the duties of the second switching elements and determines the duties of the first switching elements on and the duties of the first switching elements.

Abstract: The present specification relates to an organic light emitting device.

Abstract: A semiconductor device includes a source structure penetrated by a first penetrating portion, a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion.

Abstract: A scroll compressor of the present disclosure includes a housing; a motor provided in the housing; a rotating shaft rotated by the motor; an orbital scroll orbital moved by the rotating shaft; and a fixed scroll forming a compression chamber together with the orbital scroll, wherein the housing includes a center housing through which the rotating shaft passes; a front housing forming a motor accommodating space in which the motor is accommodated; and a rear housing having a discharge chamber accommodating a refrigerant discharged from the compression chamber, a discharge port guiding the refrigerant of the discharge chamber to an outside of the housing, an introduction port into which an intermediate pressure refrigerant is introduced from the outside of the housing, and an introduction chamber accommodating the refrigerant introduced through the introduction port, and wherein the fixed scroll comprises an injection hole guiding the refrigerant of the introduction chamber to the compression chamber.