Abstract: A method of a first communication node may comprise: transmitting, to a second communication node, an initiation signal indicating to initiate a collection procedure of training data for a neural network; transmitting, to the second communication node, an information signal including network parameters of the first communication node; receiving, from the second communication node, the training data in response to the information signal; training the neural network using the training data; determining optimal network parameters using the trained neural network; and performing communication with the second communication node using the optimal network parameters.

Abstract: Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 ? to 6000 ?; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Abstract: Disclosed is an endoscope apparatus. The endoscope apparatus of the present invention includes: an endoscope including a flexible insertion section to be inserted into a human body; a flexible channel attached to the insertion section so that a part forms a passage in a longitudinal direction of the insertion section; and an assistant arm movably inserted into the passage and manipulated by a control device, and the assistant arm includes forceps capable of gripping a human body tissue, and a bending section bent by the control device to pull the human body tissue griped by the forceps.

Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer high and tunable Cu removal rates and low Cu static etching rates for polishing the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions also provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, TiN, and SiN; and dielectric films, such as TEOS, low-k, and ultra-low-k films. The CMP polishing compositions comprise abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, and combinations therefore; the Cu static etching reducing agents include, but not limited to, organic alkyl sulfonic acids with straight or branched alkyl chains, and salts of organic alkyl sulfonic acids.

Abstract: The present invention relates to a surgical double parallelogram device, and to a surgical double parallelogram device in which respective pitch and roll module units form a double parallelogram while pitch- and roll-rotating. To this end, disclosed is the surgical double parallelogram device comprising: a plurality of pitch and roll module units in which each module forms a plurality of stages and which provides two degrees of freedom for each module to be capable of dependently pitch- and roll-rotating; and a plurality of pitch link units connected to the plurality of pitch and roll module units to form a double parallelogram.

Abstract: The present invention relates to an apparatus for locking a surgical instrument by using magnetic force and, more specifically, to an apparatus for locking a surgical instrument by using magnetic force, which installs or uninstalls an instrument for microsurgery by using magnetic force in order to reduce a load that may occur during installing/uninstalling an instrument for microsurgery.

Abstract: The present disclosure provides a system for accelerating multi-agent reinforcement learning through sparsity processing and an operating method thereof and proposes an acceleration system, which can analyze a weight pruning algorithm capable of guaranteeing accuracy suitably for characteristics of multi-agent reinforcement learning and includes an on-chip encoding unit, a sparse weight workload allocation unit, and sparsity parallel processing architecture through vector processing, which can effectively support the weight pruning algorithm, and an operating method of the system. Furthermore, the present disclosure proposes an acceleration platform that constitutes a circuit in a way to be suitable for a deep learning model from its initial step while having high throughput and power efficiency by using an FPGA, not a GPU in which several thousands of cores have been integrated and which generate many and consume great power.

Abstract: A method for developing or improving a process for producing a product from a material comprising steps of acquiring the composition for at least two slurries as raw material data (17) for the CMP based manufacturing process and its relevant parameters (2) by using a Data Collecting computer (9); physically performing specific method steps of a CMP process; measuring relevant parameters of the used slurries and the physically performed CMP process to determine the CMP process performance by using the Data Collecting computer (9); analyzing the measured data about the relevant parameters with a specific software performed on an Analyzing computer (11) by creating for the software and applying with it a predictive model using Machine Learning to understand the intercorrelation of the different parameters and using the results to improve the CMP process performance and the resulting product quality of the CMP based manufacturing process.

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Abstract: A reinforcement learning device includes a computation circuit configured to perform an operation between a weight matrix and an input activation vector and to apply an activation function on an output of the operation to generate an output activation vector. The computation circuit quantizes the input activation vector when a quantization delay time has elapsed since beginning of a learning operation and does not quantize the input activation vector otherwise.

Abstract: A slave device according to an example embodiment may comprise: a lower shaft; an upper shaft connected to the lower shaft so as to be able to slide with a single degree of freedom; a lower gripper rotatably supporting the lower shaft; an upper gripper rotatably supporting the upper shaft; a lower delta robot movably supporting the lower gripper; and an upper delta robot movably supporting the upper gripper.

Abstract: A surgical robot includes a surgical tool including a bendable joint portion, and a bending tendon connected to the joint portion and configured to bend the joint portion, a tube connected to the surgical tool and configured to accommodate the bending tendon therein, a base housing configured to rotatably support the tube and accommodate the bending tendon that passes through the tube, a bending driver configured to grasp the bending tendon, and translate in a longitudinal direction parallel to a rotation axis of the tube with respect to the base housing, and a rotation driver configured to rotatably support the tube with respect to the base housing, wherein when the tube rotates, the rotation driver is connected to one portion of the bending driver that grasps the bending tendon, and rotates the tube and the bending tendon together.

Abstract: Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (?100 nm, ?50 nm, ?40 nm, ?30 nm, or ?20 nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.

Abstract: A flexible drive manipulator according to an example embodiment may include a proximal portion, a plurality of joint portions drivably connected from an end of the proximal portion with respect to a longitudinal axis, a distal portion connected to an end of the plurality of joint portions, a pair of drive wires passing through the plurality of joint portions in parallel along the longitudinal axis, the pair of drive wires configured to drive the plurality of joint portions in a rotational direction of rotation with respect to a transverse axis perpendicular to the longitudinal axis, and a fixing wire passing through the plurality of joint portions in a shape of converging along the longitudinal axis, the fixing wire configured to adjust rigidity of the plurality of joint portions.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: The present disclosure relates to an automobile including a steam washer mounted thereon capable of removing water remaining in the steam washer within a short period of time through the use of an air compressing tank and a compressed air feeding pump for feeding compressed air stored in the air compressing tank to a water chamber of a steam generator and a water tank.

Abstract: An arm rest apparatus, according to one embodiment, may comprise: a fixed part fixed to an external object; a horizontal movement module having one end rotatably connected to the fixed part and the other end having two-translational-degree-of-freedom movement with respect to the fixed part; and an arm support module installed to have two rotational degrees of freedom with respect to the other end of the horizontal movement module.

Abstract: A flexible drive manipulator according to an example embodiment may include a proximal portion, a plurality of joint portions drivably connected from an end of the proximal portion with respect to a longitudinal axis, a distal portion connected to an end of the plurality of joint portions, a pair of drive wires passing through the plurality of joint portions in parallel along the longitudinal axis, the pair of drive wires configured to drive the plurality of joint portions in a rotational direction of rotation with respect to a transverse axis perpendicular to the longitudinal axis, and a fixing wire passing through the plurality of joint portions in a shape of converging along the longitudinal axis, the fixing wire configured to adjust rigidity of the plurality of joint portions.

Abstract: The present disclosure relates to an automobile including a steam washer mounted thereon capable of removing water remaining in the steam washer within a short period of time through the use of an air compressing tank and a compressed air feeding pump for feeding compressed air stored in the air compressing tank to a water chamber of a steam generator and a water tank.

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.