Abstract: A method for controlling a vehicle includes: determining an accelerator position sensor/brake pedal position sensor (APS/BPS) command value based on a state variable and a reward variable including a prediction value for a future velocity of the vehicle predicted based on a past APS/BPS command value of the vehicle; and learning for a reward value according to the reward variable to satisfy a predetermined goal based on a change that the determined APS/BPS command value causes to at least one state variable under given environment information.

Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.

Abstract: A light-emitting package including a substrate having pixel regions; first to third light-emitting chips on each of the pixel regions; and a molding layer on a top surface of the substrate, the molding layer covering the first to third light-emitting chips, wherein one of the first to third light-emitting chips emits light whose color is different from others of the first to third light-emitting chips, on pixel regions, the first to third light-emitting chips are arranged along a first direction, the first direction being parallel to the top surface of the substrate, a minimum interval between the first light-emitting chip and a top or side surface of the molding layer is different from a minimum interval between the second light-emitting chip and the top or side surface of the molding layer, the side surface of the molding layer intersects a second direction parallel to the top surface of the substrate.

Abstract: A light-emitting package including a substrate having pixel regions; first to third light-emitting chips on each of the pixel regions; and a molding layer on a top surface of the substrate, the molding layer covering the first to third light-emitting chips, wherein one of the first to third light-emitting chips emits light whose color is different from others of the first to third light-emitting chips, on pixel regions, the first to third light-emitting chips are arranged along a first direction, the first direction being parallel to the top surface of the substrate, a minimum interval between the first light-emitting chip and a top or side surface of the molding layer is different from a minimum interval between the second light-emitting chip and the top or side surface of the molding layer, the side surface of the molding layer intersects a second direction parallel to the top surface of the substrate.

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Ir).

Abstract: A capacitor for a semiconductor memory element includes a lower electrode, a dielectric layer disposed on the lower electrode and including titanium oxide, and an upper electrode disposed on the dielectric layer. The lower electrode includes a first metal and a second metal, the first metal including at least one selected from the group consisting of platinum (Pt), osmium (Os), rhodium (Rh) and palladium (Pd), the second metal including at least one selected from the group consisting of ruthenium (Ru) and iridium (Jr).

Abstract: A light-emitting device package and method of manufacturing the same. The method includes: preparing a package main body comprising a plurality of cavities, wherein a light-emitting device chip is mounted in each of the cavities and a through hole is formed in a bottom of each of the cavities; preparing a fixed mold providing a first surface that blocks the cavity; coupling the package main body to the fixed mold such that an end portion of the cavity contacts the first surface; supplying an encapsulation material into the cavity through the through hole; hardening the encapsulation material; and separating the package main body from the fixed mold, and dicing the package main body into a plurality of light-emitting device packages using a singulation operation. The encapsulation material is supplied while disposing the package main body on the fixed mold so that the encapsulation material is supplied in a gravitational direction.

Abstract: A light-emitting device package and method of manufacturing the same. The method includes: preparing a package main body comprising a plurality of cavities, wherein a light-emitting device chip is mounted in each of the cavities and a through hole is formed in a bottom of each of the cavities; preparing a fixed mold providing a first surface that blocks the cavity; coupling the package main body to the fixed mold such that an end portion of the cavity contacts the first surface; supplying an encapsulation material into the cavity through the through hole; hardening the encapsulation material; and separating the package main body from the fixed mold, and dicing the package main body into a plurality of light-emitting device packages using a singulation operation. The encapsulation material is supplied while disposing the package main body on the fixed mold so that the encapsulation material is supplied in a gravitational direction.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: There is provided a light emitting diode (LED) package. The LED package includes A light emitting diode (LED) package includes a pair of lead frames connected with at least one LED chip through a metal wire, a package body integrally fixed with the lead frames and having a cavity having an open top, a lead frame bent downwardly to a lower part of an external mounting surface of the package body, a light-transmissive, transparent resin covering the LED chip and filling the cavity, a recess formed in a bottom surface of the cavity, in which the LED chip is mounted, and a transparent resin including a fluorescent material formed in the recess and the cavity. Accordingly, the amount of light-transmissive, transparent resin filling the cavity is reduced to save on manufacturing costs, and the height of the resin is lowered to improve the luminance of light. Also, the height of the package body is lowered, contributing to manufacturing a small product.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.