Patents by Inventor In Ko

In Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7473700
    Abstract: A 1,2,4-triazole derivative of formula 1 or a non-toxic salt thereof, a preparation method thereof, and a pharmaceutical composition containing the derivative or the salt as an active ingredient are provided.
    Type: Grant
    Filed: November 26, 2003
    Date of Patent: January 6, 2009
    Assignee: CJ Corporation
    Inventors: Il Hwan Cho, Dong Hyun Ko, Myeong Yun Chae, In Ki Min, Young Hoon Kim, Kyu Jeong Yeon, Jong Hoon Kim, Sung Hak Jung, Sang Wook Park, Il Hwan Kim, Hyung Chul Ryu, Ji Young Noh, Hyun Jung Park, Jie Eun Park, Young Mee Chung
  • Patent number: 7474773
    Abstract: A method of identifying a donor of a fingerprint image exhibiting a pattern of minutiae. The method comprises deriving a donor index code and a donor match code associated with the donor fingerprint image. A database of records is accessed—each record being associated with an identity and indicative of a respective index code and a respective match code—in an attempt to identify at least one record for which the respective index code corresponds to the donor index code. Responsive to the attempt being successful, it is determined whether any of these “candidate” records includes a particular record for which the respective match code corresponds to the donor match code. Upon indeed determining that this is so for a particular record, an output is generated, such output being indicative of a conclusion that the donor of the fingerprint image has the identity associated with the particular record.
    Type: Grant
    Filed: November 16, 2007
    Date of Patent: January 6, 2009
    Inventor: Lam Ko Chau
  • Patent number: 7474061
    Abstract: An organic electroluminescent display (“OELD”) includes an organic light-emitting diode (“OLED”) panel and a driving panel. The OLED panel includes an image display portion which displays an image using an OLED, and the driving panel includes a driving circuit portion which controls the image display portion. The OLED panel and the driving panel are combined into one body to complete the OELD. The image display portion and the driving circuit portion are electrically connected through pads disposed between the OLED panel and the driving panel, and the OLED panel and the driving panel are fabricated using separate processes, thus preventing the driving panel from being damaged by heat generated in the fabrication process of the OLED panel.
    Type: Grant
    Filed: November 30, 2006
    Date of Patent: January 6, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Sik Oh, Ho-nyeon Lee, Sung-Kee Kang, Ick-hwan Ko, Young-gu Lee
  • Publication number: 20090003121
    Abstract: A column address control circuit comprises a control unit for outputting a control signal in response to a DDR mode signal and a first signal, and an address counting unit configured to receive a start column address and output a start column address in response to the control signal. The first signal is a burst read single write mode signal. The control signal is activated when the first signal is activated in a DDR mode. The control unit includes a first logic unit for performing an AND operation of the DDR mode signal and the first signal, and a second logic unit for performing an OR operation of an output signal of the first logic unit and a SDR mode signal.
    Type: Application
    Filed: December 27, 2007
    Publication date: January 1, 2009
    Inventor: Bok Rim Ko
  • Publication number: 20090001461
    Abstract: An LDMOS device and a method for fabricating the same that may include a first conductivity-type semiconductor substrate having an active area and a field area; a second conductivity-type deep well formed on the first conductivity-type semiconductor substrate; a second conductivity-type adjusting layer located in the second conductivity-type deep well; a first conductivity-type body formed in the second conductivity-type deep well; an insulating layer formed on the first conductivity-type semiconductor substrate in the active area and the field area; a gate area formed on the first conductivity-type semiconductor substrate in the active area; a second conductivity-type source area formed in the first conductivity-type body; a second conductivity-type drain area formed in the second conductivity-type deep well. Accordingly, such an LDMOS device has a high breakdown voltage without an increase in on-resistance.
    Type: Application
    Filed: June 19, 2008
    Publication date: January 1, 2009
    Inventor: Choul-Joo Ko
  • Publication number: 20090001294
    Abstract: A neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, and a basket horizontally movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein. Further, a neutron coincidence counter for non-destructive accounting for a nuclear material according to the present invention comprises an outer case, neutron detectors mounted in the outer case while being surrounded by a moderator, a basket movable in the outer case so as to be exposed outside the outer case and having a cavity for receiving a sample container therein, and an external signal analyzer connected to the detectors through an electrically conductive path.
    Type: Application
    Filed: September 29, 2006
    Publication date: January 1, 2009
    Applicants: KOREA ATOMIC ENERGY RESEARCH INSTITUTE, KOREA HYDRO & NUCLEAR POWER CO., LTD.
    Inventors: Tae Hoon Lee, Ho Dong Kim, Won Il Ko, Dae Yong Song, Joong Hwan Jeong, Sang Yoon Lee
  • Publication number: 20090001358
    Abstract: An organic light emitting device and a method of manufacturing the same are disclosed. The organic light emitting device includes a substrate, a gate electrode on the substrate, a first insulating film insulating the gate electrode, a semiconductor layer positioned opposite to the gate electrode, a second insulating film insulating the semiconductor layer, source and drain electrodes connected to the semiconductor layer, a first electrode connected to one of the source and drain electrodes, a third insulating film including an opening that exposes the first electrode, a second electrode positioned opposite to the first electrode, and a light emitting layer positioned between the first electrode and the second electrode. A taper angle of an edge area of the third insulating film contacting the first electrode lies substantially in a range between 10° and 50°.
    Type: Application
    Filed: January 16, 2008
    Publication date: January 1, 2009
    Inventors: Hongki Park, Kyungtak Oh, Sammin Ko
  • Publication number: 20090004718
    Abstract: Disclosed is an antioxidant fermenting microorganism agent and a polyurethane foam including the same. The antioxidant fermenting microorganism agent is used to generate a substance that is capable of reducing an amount of volatile organic compounds generated from the polyurethane foam and has an antimicrobial ability. The polyurethane foam containing the antioxidant fermenting microorganism according to the present invention can be used as the material for the interior of a vehicle to protect humans from noxious substances causing sick car syndrome.
    Type: Application
    Filed: May 9, 2007
    Publication date: January 1, 2009
    Applicants: DYMOS INC., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Taek Lim, Jae-Yong Ko, Eun-Ju Lee, In-Sung Kim, Chang-Hong Lee
  • Publication number: 20090004704
    Abstract: Disclosed herein are Xylitol dehydrogenase-inactivated and arabinose reductase-inhibited mutant of Candida tropicalis, a method of producing a high yield of xylitol using the same, and xylitol produced by the method. More specifically, disclosed are a method for producing a high yield of xylitol, in which a high concentration of xylose contained in a biomass hydrolyzate is converted to xylitol using xylitol dehydrogenase-inactivated mutant of Candida tropicalis, without controlling dissolved oxygen to a low level, as well as xylitol produced according to the method. Also disclosed are a xylitol production method, in which the production of byproduct arabitol, which is produced when using a biomass as a substrate and adversely affects the yield of xylitol, is significantly reduced through the use of Candida tropicalis mutant ara-89 (KCTC 11136bp) having an inhibited activity of arabinose reductase converting arabinose to arabitol, thus increasing xylitol productivity, as well as xylitol produced by the method.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 1, 2009
    Applicants: LPBio, Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Jung Hoe Kim, Byoung Sam Ko
  • Publication number: 20090002114
    Abstract: An integrated inductor has a winding. The winding includes a first level metal layer inlaid in a first dielectric layer, a second level metal layer inlaid in a second dielectric layer above the first dielectric layer, and a first line-shaped via structure inlaid in a slot of a third dielectric layer interposed between the first and second dielectric layers for interconnecting the first and second level metal layers.
    Type: Application
    Filed: June 26, 2007
    Publication date: January 1, 2009
    Inventors: Ming-Tzong Yang, Kuei-Ti Chan, Ching-Chung Ko
  • Publication number: 20090006914
    Abstract: Disclosed is a semiconductor integrated circuit that allows a fail path to be detected. A semiconductor integrated circuit as described herein can be configured to include a data register that can receive input data to generate and store a write expectation value and a read expectation value, during a period in which a test mode is activated, a first comparing unit that compares write data written in a memory cell with the write expectation value, and a second comparing unit that compares read data read from the memory cell with the read expectation value.
    Type: Application
    Filed: December 17, 2007
    Publication date: January 1, 2009
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventor: Bok Rim Ko
  • Publication number: 20090004796
    Abstract: A method of manufacturing a non-volatile memory includes providing a substrate and forming a patterned mask layer, a tunnel dielectric layer, and a first conductive layer on the substrate. The first conductive layer on the mask layer is removed to form second conductive layers disposed on the sidewall of the mask layer and the substrate. The mask layer is then removed and a source region is formed. Subsequently, an inter-gate dielectric layer and a third conductive layer are formed on the substrate. The third conductive layer is patterned to cover the source region and a portion of the second conductive layer on both sides of the source region. A portion of the inter-gate dielectric layer and the second conductive layers are then removed. After that, a dielectric layer, a fourth conductive layer, and a drain region are formed, respectively.
    Type: Application
    Filed: September 15, 2008
    Publication date: January 1, 2009
    Applicant: POWERCHIP SEMICONDUCTOR CORP.
    Inventors: Ko-Hsing Chang, Tsung-Cheng Huang, Yan-Hung Huang
  • Publication number: 20090001610
    Abstract: A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
    Type: Application
    Filed: June 28, 2007
    Publication date: January 1, 2009
    Inventors: Chien-Ko Liao, Chin-Tien Chiu, Jack Chang Chien, Cheemen Yu, Hem Takiar
  • Publication number: 20090004781
    Abstract: A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
    Type: Application
    Filed: June 28, 2007
    Publication date: January 1, 2009
    Inventors: Chien-Ko Liao, Chin-Tien Chiu, Jack Chang Chien, Cheemen Yu, Hem Takiar
  • Publication number: 20090004851
    Abstract: A selective electroless plating operation provides for the selective deposition of a metal film only on exposed silicon surfaces of a semiconductor substrate and not on other surfaces such as dielectric surfaces. The plating solution includes metal ions and advantageously also includes dopant impurity ions. The pure metal or metal alloy film formed on the exposed silicon surfaces is then heat treated to form a metal silicide on the exposed silicon surfaces and to drive the dopant impurities to the interface formed between the exposed silicon surfaces and the metal silicide film.
    Type: Application
    Filed: June 29, 2007
    Publication date: January 1, 2009
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shau-Lin Shue, Ting-Chu Ko, Chien-Hsueh Shih
  • Publication number: 20090004673
    Abstract: A method for determining a condition of disseminated intravascular coagulation (DIC), by analyzing the amount and/or enzyme activity of a von Willebrand factor (vWF)-cleaving protease (ADAMTS13) (preferably also the amount of vWF) in a patient suffering from DIC, and a kit for determining a condition of DIC, comprising an antibody or a fragment thereof which specifically binds to ADAMTS13, are disclosed. According to the present invention, a differential diagnosis of patients with thrombotic thrombocytopenic purpura (TTP) can be carried out from among patients with DIC, which could not be distinguished on the basis of only clinical findings or known markers.
    Type: Application
    Filed: January 30, 2007
    Publication date: January 1, 2009
    Applicants: MITSUBISHI KAGAKU IATRON, INC., JURIDICAL FOUNDATION THE CHEMO-SERO-THERAPEUTIC RESEARCH INSTITUTE
    Inventors: Tomoko Ono, Shinichiro Watanabe, Fumio Furusaki, Ko Igami
  • Patent number: 7470636
    Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: December 30, 2008
    Assignee: LG Chem, Ltd.
    Inventors: Min-Jin Ko, Hye-Yeong Nam, Jung-Won Kang, Myung-Sun Moon, Dong-Seok Shin
  • Patent number: 7471863
    Abstract: A near-field interaction control element includes a near-field optical waveguide containing particles formed of a metal, a metal anion or a metal cation with a diameter of 0.5 nm or more and 3 nm or less and a dielectric constant of ?2.5 or more and ?1.5 or less, an electron injector/discharger injecting or discharging an electron into or from the particles contained in the near-field optical waveguide to vary a dielectric constant of the near-field optical waveguide, a near-field light introducing part introducing near-field light into the near-field optical waveguide, and a near-field light emitting part emitting the near-field light having guided through the near-field optical waveguide.
    Type: Grant
    Filed: March 26, 2007
    Date of Patent: December 30, 2008
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Todori, Miho Maruyama, Reiko Yoshimura, Fumihiko Aiga, Tsukasa Tada, Ko Yamada
  • Patent number: 7470046
    Abstract: A backlight module and an illumination device thereof. The illumination device of the backlight module comprises a light source and a lens, disposed over the light source with a predetermined gap therebetween. The lens comprises a bottom surface as an incident surface, a pair of upper refracting surfaces, and a pair of lateral refracting surfaces. The upper refracting surfaces form an included angle substantially in a range of about 80° to about 120°.
    Type: Grant
    Filed: July 6, 2005
    Date of Patent: December 30, 2008
    Assignee: AU Optronics Corp.
    Inventors: Ko-Chia Kao, Chih-Kuang Cheng, Jyh-Haur Huang, Jing-Huan Liao
  • Patent number: D584271
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: January 6, 2009
    Assignee: Sutech Trading Limited
    Inventors: Hui-An Ko, Tzu-Cheng Yu