Abstract: A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a select line, from being injected into a floating gate of the program-inhibited cell. The program-inhibited cell shares a word line adjacent to the select line such that a trench is formed in the semiconductor substrate between the select line and the adjacent word line to increase a distance between the select line and the word line.

Abstract: A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a select line, from being injected into a floating gate of the program-inhibited cell. The program-inhibited cell shares a word line adjacent to the select line such that a trench is formed in the semiconductor substrate between the select line and the adjacent word line to increase a distance between the select line and the word line.

Abstract: The present invention relates to a method for manufacturing a flash memory device. A plurality of conductive layers and dielectric layers are etched in a single etch apparatus, thus forming a control gate and a floating gate. In a gate formation process in which a thickness of a floating gate is over 1500 ?, problems in short process time and short mass production margin in an existing process can be solved while completely stripping a dielectric layer fence.

Abstract: A method of fabricating a flash memory device is disclosed where a trench formation process and a wall oxide film formation process are performed separately depending on a pattern density, and wall oxide films are formed with different thicknesses. Accordingly, an increase in a thickness of the wall oxide films due to a smiling effect of tunnel oxide films by a wall oxidization process is prevented and reliability of a device can thus be improved.

Abstract: A method of manufacturing a flash memory device by carrying out the process of shallow trench isolation (STI) in a memory cell region, so that it decreases an aspect ratio of pattern by forming a field isolation film so as to reduce gap-filling defects due to high density plasma (HDP) and to prevent the smiling effect at a tunnel oxide film so as to improve a programming speed of the flash memory device. The method also conducts the process of self-aligned shallow trench isolation (SA-STI) in a peripheral circuit region by forming a field isolation film, so that it prevents degradation in the characteristics of high and low voltage gate oxide films.

Abstract: A method of fabricating a flash memory device is disclosed where a trench formation process and a wall oxide film formation process are performed separately depending on a pattern density, and wall oxide films are formed with different thicknesses. Accordingly, an increase in a thickness of the wall oxide films due to a smiling effect of tunnel oxide films by a wall oxidization process is prevented and reliability of a device can thus be improved.

Abstract: A method of manufacturing a flash memory device by carrying out the process of shallow trench isolation (STI) in a memory cell region, so that it decreases an aspect ratio of pattern by forming a field isolation film so as to reduce gap-filling defects due to high density plasma (HDP) and to prevent the smiling effect at a tunnel oxide film so as to improve a programming speed of the flash memory device. The method also conducts the process of self-aligned shallow trench isolation (SA-STI) in a peripheral circuit region by forming a field isolation film, so that it prevents degradation in the characteristics of high and low voltage gate oxide films.

Abstract: The present invention discloses a method for manufacturing a flash memory device including the steps of: sequentially forming a first polysilicon film for a floating gate electrode, a first oxide film, a polysilicon film for a hard mask and a second oxide film on a semiconductor substrate; etching and patterning the second oxide film and the polysilicon film for the hard mask, by forming photoresist patterns on a predetermined region of the second oxide film, and removing the photoresist patterns; forming spacers on the sidewalls of the polysilicon film for the hard mask, by forming and etching a polysilicon film for forming spacers on the whole surface of the resulting structure; removing the exposed first oxide film and a predetermined thickness of second oxide film formed on the patterned polysilicon film for the hard mask; forming floating gate electrode patterns by performing first and second etching processes by using the patterned polysilicon film for the hard mask and the spacers as an etch mask; perf

Abstract: The present invention relates to a method for manufacturing a flash memory device. A plurality of conductive layers and dielectric layers are etched in- a single etch apparatus, thus forming a control gate and a floating gate. In a gate formation process in which a thickness of a floating gate is over 1500 ?, problems in short process time and short mass production margin in an existing process can be solved while completely stripping a dielectric layer fence.

Abstract: Methods of manufacturing flash memory cells. During a cleaning process after an etching process for forming a control gate is performed, polymer remains at the sidewall of a tungsten silicide layer. Therefore, the sidewall of the tungsten silicide layer is protected from a subsequent a self-aligned etching process. In addition, upon a self-aligned etching process, the etch selective ratio of the tungsten silicide layer to a polysilicon layer is sufficiently obtained using a mixed gas of HBr/O2. Therefore, etching damage to the sidewall of the tungsten silicide layer can be prevented. As a result, reliability of the process and an electrical characteristic of the resulting device are improved.

Abstract: Methods of manufacturing flash memory cells. During a cleaning process after an etching process for forming a control gate is performed, polymer remains at the sidewall of a tungsten silicide layer. Therefore, the sidewall of the tungsten silicide layer is protected from a subsequent a self-aligned etching process. In addition, upon a self-aligned etching process, the etch selective ratio of the tungsten silicide layer to a polysilicon layer is sufficiently obtained using a mixed gas of HBr/O2. Therefore, etching damage to the sidewall of the tungsten silicide layer can be prevented. As a result, reliability of the process and an electrical characteristic of the resulting device are improved.