Patents by Inventor In Kyoung Heo

In Kyoung Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including a spacer in contact with an upper surface of a silicide layer
    Patent number: 11468919
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: October 11, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Jin Park, Won Seok Yoo, Keun Nam Kim, Hyo-Sub Kim, So Hyun Park, In Kyoung Heo, Yoo Sang Hwang
  • SEMICONDUCTOR DEVICE
    Publication number: 20210035613
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.
    Type: Application
    Filed: April 7, 2020
    Publication date: February 4, 2021
    Inventors: Tae Jin PARK, Won Seok Yoo, Keun Nam Kim, Hyo-Sub Kim, So Hyun Park, In Kyoung Heo, Yoo Sang Hwang