Abstract: The present disclosure relates to a semiconductor device having a three-dimensional structure capable of increasing a junction area of a semiconductor laminate per unit area of a substrate and a method of manufacturing the same. The semiconductor device includes a substrate having a first orientation plane as a main plane, a partition wall part provided to protrude outward from the main plane, and a semiconductor laminate grown from a side surface of the partition wall part and having, as a growth plane, a second orientation plane having a plane orientation different from that of the first orientation plane.

Abstract: A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Abstract: The present inventive concept relates to a thermal radiation body for cooling a heating element, which includes a pattern unit including a pore part provided as an empty space or filled with a gas phase and a cover part covering the pore part and dissipates heat of the heating element through heat radiation.

Abstract: A card socket for mounting a SIM card and an SD card for a mobile communication terminal includes a housing and a shell. The housing includes a first terminal portion having a first terminal disposed therein, a second terminal portion having a second terminal and a third terminal disposed therein, and a switch portion. The shell includes an upper wall and a sidewall. The shell includes a sensing portion extended from the upper wall to detect insertion of a card tray into the card socket. The sensing portion has a shape which is extended downward from the upper wall in the height direction and then is extended upward in the height direction. The switch portion includes a stopper which is configured to come into contact with an upper surface of the sensing portion and to prevent the sensing portion from being lifted up in the height direction.

Abstract: A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Abstract: A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Abstract: A card socket for mounting a SIM card and an SD card for a mobile communication terminal includes a housing and a shell. The housing includes a first terminal portion having a first terminal disposed therein, a second terminal portion having a second terminal and a third terminal disposed therein, and a switch portion. The shell includes an upper wall and a sidewall. The shell includes a sensing portion extended from the upper wall to detect insertion of a card tray into the card socket. The sensing portion has a shape which is extended downward from the upper wall in the height direction and then is extended upward in the height direction. The switch portion includes a stopper which is configured to come into contact with an upper surface of the sensing portion and to prevent the sensing portion from being lifted up in the height direction.

Abstract: The present inventive concept relates to a thermal radiation body for cooling a heating element, which includes a pattern unit including a pore part provided as an empty space or filled with a gas phase and a cover part covering the pore part and dissipates heat of the heating element through heat radiation.

Abstract: A method for operating an electronic device is provided. The method includes receiving information from outside of the electronic device, identifying blocking configuration information on the received information, determining a method for blocking the received information according to the blocking configuration information, and blocking the received information based on the determined blocking method.

Abstract: Disclosed is a substrate structure and a method for forming the same, in which a high-quality nitride semiconductor layer may be formed with a reduced stress applied to the nitride semiconductor layer at the growth of the nitride semiconductor layer and also be easily separated from the substrate, and a semiconductor lamination structure using the same and a method for forming the same, and a method for manufacturing a nitride semiconductor using the same. The substrate structure includes a single-crystal substrate heterogeneous from a nitride semiconductor, and a crystallized inorganic thin film having a leg portion configured to contact the substrate to define an integrated cavity between the leg portion and the substrate and an upper surface extending from the leg portion and parallel to the substrate, the crystallized inorganic thin film having the same crystal structure as the substrate.

Abstract: A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Abstract: A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Abstract: An Access Point (AP) connection method in an electronic device and the electronic device thereof are provided. The method includes transmitting a request message relating to AP information connected for wireless Local Area Network (LAN) connection and inquiring about a rogue AP, to an Internet server, when the AP is not the rogue AP according to a response message received from the Internet server, maintaining connection to the AP, and providing other AP information to the Internet server.

Abstract: A server is provided comprising a processor configured to: receive an indication of a location of a first device that is subscribed to a disaster notification service; in response to receiving a disaster alert, detect that the first device is located in an area associated with the disaster based on the indication of the location of the first device; identify a second device that has registered the first device as a friend; and transmit a first indication of the disaster to the first device and a second indication of the disaster to the second device.

Abstract: A method for filtering spam in an electronic device is provided. The method includes transmitting a request message inquiring whether a received call or message is spam to a server through a mobile communication network, in response to the received call or message being determined to be spam based on a response message received from the server, displaying an alert message, and storing a sender phone number of the received call or message in a spam phone number list.

Abstract: A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Abstract: Disclosed is a substrate structure and a method for forming the same, in which a high-quality nitride semiconductor layer may be formed with a reduced stress applied to the nitride semiconductor layer at the growth of the nitride semiconductor layer and also be easily separated from the substrate, and a semiconductor lamination structure using the same and a method for forming the same, and a method for manufacturing a nitride semiconductor using the same. The substrate structure includes a single-crystal substrate heterogeneous from a nitride semiconductor, and a crystallized inorganic thin film having a leg portion configured to contact the substrate to define an integrated cavity between the leg portion and the substrate and an upper surface extending from the leg portion and parallel to the substrate, the crystallized inorganic thin film having the same crystal structure as the substrate.

Abstract: A light emitting device can include a supporting layer; a semiconductor structure including: an active layer between first-type and second-type semiconductor layers, a first top surface and a first bottom surface, and a side surface between the first top and bottom surfaces, which is inclined; a first electrode between the supporting and semiconductor layers; a connection metal layer having a first portion between the first electrode and the supporting layer, which includes a stepped portion having a upper portion contacting the first electrode, and a second portion of the connection metal layer extends beyond the semiconductor structure; and a passivation layer extending from the second portion of the connection metal layer to the side surface of the semiconductor structure, which includes a second bottom surface contacting the second portion of the connection metal layer; and a second top surface opposite to the second bottom surface.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: A method for operating an electronic device is provided. The method includes receiving information from outside of the electronic device, identifying blocking configuration information on the received information, determining a method for blocking the received information according to the blocking configuration information, and blocking the received information based on the determined blocking method.