Abstract: Provided is a non-volatile memory device including; a substrate having source/drain regions and a channel region between the source/drain regions; a tunneling insulating layer formed in the channel region of the substrate; a charge storage layer formed on the tunneling insulating layer; a blocking insulating layer formed on the charge storage layer, and comprising a silicon oxide layer and a high-k dielectric layer sequentially formed; and a control gate formed on the blocking insulating layer, wherein an equivalent oxide thickness of the silicon oxide layer is equal to or greater than that of the high-k dielectric layer.

Abstract: The present invention relates to an acrylonitrile-butadiene-styrene resin composition, and more precisely, an acrylonitrile-butadiene-styrene resin composition which is prepared by adding a brominated organic compound flame retardant, an antimony flame retardant auxiliary and one or more other compounds selected from a group consisting of metal stearate and stearamide compounds to a basic resin composed of acrylonitrile-butadiene-styrene copolymer and styrene-acrylonitrile copolymer. The acrylonitrile-butadiene-styrene resin composition of the present invention not only has excellent flame resistance but also has improved thermostability and weatherability.

Abstract: A method of manufacturing a non-volatile memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower dielectric layer on the conductive pattern, performing a first heat treatment process to density the lower dielectric layer, and forming a middle dielectric layer having an energy band gap smaller than that of the lower dielectric layer on the first heat-treated lower dielectric layer. The method further includes forming an upper dielectric layer including a material substantially identical to that of the lower dielectric layer on the middle dielectric layer, performing a second heat treatment process to densify the middle dielectric layer and the upper dielectric layer and forming a conductive layer on the second heat-treated upper dielectric layer.

Abstract: A nonvolatile memory device includes a semiconductor substrate, a tunneling insulation layer on the semiconductor substrate, a charge storage layer on the tunneling insulation layer, an inter-electrode insulation layer on the charge storage layer, and a control gate electrode on the inter-electrode insulation layer. The inter-electrode insulation layer includes a high-k dielectric layer having a dielectric constant greater than that of a silicon nitride, and an interfacial layer between the charge storage layer and the high-k dielectric layer. The interfacial layer includes a silicon oxynitride layer.

Abstract: A non-volatile memory device includes a semiconductor layer including source and drain regions and a channel region between the source and drain regions; a tunneling insulating layer on the channel region of the semiconductor layer; a charge storage layer on the tunneling insulating layer; a blocking insulating layer on the charge storage layer and including a first oxide layer with a first thickness, a high-k dielectric layer, and a second oxide layer with a second thickness different from the first thickness that are stacked sequentially on the charge storage layer; and a control gate on the blocking insulating layer.

Abstract: A mobile terminal and a method of controlling the operation of the mobile terminal are provided. The method includes displaying an idle screen; if a communication event occurs, displaying an avatar image corresponding to a party of the communication event on the idle screen, the communication event including making or receiving a call and sending or receiving a call; and modifying the avatar image according to the amount of occurrence of the communication event. Therefore, it is possible for a user to easily recognize the occurrence of a communication event and the amount of occurrence of the communication event from an avatar image displayed on an idle screen.

Abstract: An apparatus and a method for providing a standby screen image of a mobile terminal are disclosed to change a standby screen image in a story-telling manner according to a communication event or a usage amount of the terminal. The method for providing a standby screen image of a mobile terminal includes: displaying a standby screen image of one or more themes; and changing the displayed standby screen image in a story-telling manner according to a usage amount of the mobile terminal.

Abstract: Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Abstract: A method of manufacturing a non-volatie memory device includes forming a tunnel insulating layer on a substrate, forming a conductive pattern on the tunnel insulating layer, forming a lower dielectric layer on the conductive pattern, performing a first heat treatment process to density the lower dielectric layer, and forming a middle dielectric layer having an energy band gap smaller than that of the lower dielectric layer on the first heat-treated lower dielectric layer. The method further includes forming an upper dielectric layer including a material substantially identical to that of the lower dielectric layer on the middle dielectric layer, performing a second heat treatment process to densify the middle dielectric layer and the upper dielectric layer and forming a conductive layer on the second heat-treated upper dielectric layer.

Abstract: A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.

Abstract: The present invention relates to a monoclonal antibody that specifically binds to vascular cell adhesion molecule-1 (VCAM-1 or CD106). Specifically, the present invention relates to an antibody that specifically binds to both human and mouse vascular cell adhesion molecule-1 (VCAM-1), a method for producing the same, a composition for diagnosis or treatment comprising them and a method for diagnosis or treatment using them. The monoclonal antibody of the present invention is the first recombinant monoclonal antibodies that is specific to human and mouse VCAM-1. In addition, the monoclonal antibody of the present invention shows a strong affinity to VCAM-1 expressed in rat skeletal muscle and porcine endothelial cells as well as human and mouse endothelial cells and is found to strongly inhibit the interaction between leukocytes and activated endothelial cells.

Abstract: A computer-implemented method, system, and program product for optimizing a distributed (software) application are provided. Specifically, a configuration of a target computing environment, in which the distributed application is deployed, is discovered upon deployment of the distributed application. Thereafter, based on a set of rules and the discovered configuration, one or more optimization techniques are applied to optimize the distributed application. In a typical embodiment, the set of rules can be embedded in the distributed application, or they can be accessed from an external source such as a repository.

Abstract: Disclosed are a method of manufacturing an electrode for generating plasma, which is capable of improving durability of the electrode and reducing production costs of the electrode, an electrode structure, and an atmospheric pressure plasma apparatus using the same. The plasma electrode structure comprises a pair of electrodes isolated from each other, a plasma generating space formed between the pair of electrodes, and an oxide coating layer formed uniformly on at least one of surfaces of the pair of electrodes.

Abstract: The present invention relates to an acrylonitrile-butadiene-styrene resin composition, and more precisely, an acrylonitrile-butadiene-styrene resin composition which is prepared by adding a brominated organic compound flame retardant, an antimony flame retardant auxiliary and one or more other compounds selected from a group consisting of metal stearate and stearamide compounds to a basic resin composed of acrylonitrile-butadiene-styrene copolymer and styrene-acrylonitrile copolymer. The acrylonitrile-butadiene-styrene resin composition of the present invention not only has excellent flame resistance but also has improved thermostability and weatherability.

Abstract: A di-p-tolyldialkylsilane derivative, a photoluminescence polymer formed from the derivative, and methods for preparing the derivative and polymer are provided. The di-p-tolyldialkylsilane derivative is represented by the following formula (1): ##STR1## where R.sub.1 and R.sub.2 are independently selected from the group consisting of phenyl and --(CH.dbd.CH).sub.k R.sub.3 (k is an integer between and inclusive of 0 and 2, and R.sub.3 is hydrogen or alkyl), and X.sup.2 is selected from the group consisting of hydrogen, halogen atom and cyano group. The di-p-tolylalkylsilane derivative of the formula (1) is very useful as a monomer of a functional polymer. The photoluminescence polymer formed from the di-p-tolylalkylsilane derivative of the chemical formula (1) contains a repeating unit having a silicon between the conjugated double bonds, thereby suppressing electron movement of the conjugated double bond. As a result, a range of colors between blue and green, particularly, blue, can be obtained.