Patents by Inventor In-Mo Kim

In-Mo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10943899
    Abstract: A semiconductor device includes a guard active area formed in a substrate, a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors including an active area and a gate structure crossing the active area, and a diode transistor disposed between a first transistor and a second transistor among the transistors, and having a diode gate structure connected to the guard active area, a first active area connected to a gate structure of the first transistor, and a second active area connected to a gate structure of the second transistor.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: March 9, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Su Jeong Kim, In Mo Kim
  • Publication number: 20200135716
    Abstract: A semiconductor device includes a guard active area formed in a substrate, a plurality of transistors disposed in an element area adjacent to the guard active area, each of the transistors including an active area and a gate structure crossing the active area, and a diode transistor disposed between a first transistor and a second transistor among the transistors, and having a diode gate structure connected to the guard active area, a first active area connected to a gate structure of the first transistor, and a second active area connected to a gate structure of the second transistor.
    Type: Application
    Filed: April 26, 2019
    Publication date: April 30, 2020
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Su Jeong KIM, In Mo Kim
  • Patent number: 9576612
    Abstract: A nonvolatile memory device includes a first memory block connected to first word lines, a second memory block arranged in a direction perpendicular to the first memory block and is connected to second word lines, first pass transistors for enabling the first word lines, and second pass transistors for enabling the second word lines. The first and second pass transistors are arranged in a horizontal direction with respect to the first and second memory blocks.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: February 21, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ansoo Park, In-Mo Kim, Jung-Seok Hwang
  • Patent number: 9570446
    Abstract: A semiconductor device includes a plurality of semiconductor devices, a plurality of metal lines electrically connected to at least one of the semiconductor devices, and a protective layer on the metal lines. The protective layer includes a plurality of open areas partially exposing the metal lines and which serves as pads. A first pad includes a first area that extends from at least one of the metal lines and at least one second area around and separated from the first area.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: February 14, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo Seok Woo, In Mo Kim, Bora Lee, Sun Young Kim, Hoo Sung Cho
  • Publication number: 20150287437
    Abstract: A nonvolatile memory device includes a first memory block connected to first word lines, a second memory block arranged in a direction perpendicular to the first memory block and is connected to second word lines, first pass transistors for enabling the first word lines, and second pass transistors for enabling the second word lines. The first and second pass transistors are arranged in a horizontal direction with respect to the first and second memory blocks.
    Type: Application
    Filed: December 22, 2014
    Publication date: October 8, 2015
    Inventors: ANSOO PARK, IN-MO KIM, JUNG-SEOK HWANG
  • Patent number: 8154920
    Abstract: A method of reading data in a non-volatile memory device based on the logic level of a selection bit of an address, determines an order of reading a first and second bits of data stored in one multi-level memory cell corresponding to the address based on the logic level of the selection bit, and senses and outputs the first and second bits of data according to the determined order of reading. The method of reading data in a non-volatile memory device and the method of inputting and outputting data in a non-volatile memory device may reduce the initial read time by selecting the order of reading the first and second bits of data stored in the multi-level memory cell and reading the data according the order based on the start address.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Mo Kim, Jae-Yong Jeong
  • Publication number: 20110044113
    Abstract: A nonvolatile memory device performs a program operation on selected memory cells by determining a level of a program voltage based on a degree of deterioration of the memory cells, and executing the program operation using the program voltage.
    Type: Application
    Filed: July 1, 2010
    Publication date: February 24, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-Mo KIM, Jae Yong JEONG
  • Publication number: 20100226172
    Abstract: A method of reading data in a non-volatile memory device based on the logic level of a selection bit of an address, determines an order of reading a first and second bits of data stored in one multi-level memory cell corresponding to the address based on the logic level of the selection bit, and senses and outputs the first and second bits of data according to the determined order of reading. The method of reading data in a non-volatile memory device and the method of inputting and outputting data in a non-volatile memory device may reduce the initial read time by selecting the order of reading the first and second bits of data stored in the multi-level memory cell and reading the data according the order based on the start address.
    Type: Application
    Filed: February 25, 2010
    Publication date: September 9, 2010
    Inventors: In-Mo Kim, Jae-Yong Jeong
  • Patent number: 7787305
    Abstract: A flash memory device includes a flash memory cell array having flash memory cells arranged with word and bit lines, a word line driver circuit configured to drive the word lines at a selected step increment during a programming operation, a bulk-voltage supply circuit configured to supply a bulk voltage into a bulk of the flash memory cell array and a writing circuit configured to drive the bit lines selected by conditions during a programming operation. A control logic block is configured to control the writing circuit and the bulk-voltage supply circuit during the programming operation. The control logic block is configured to cause the writing circuit and/or the bulk-voltage supply circuit to change at least one of the conditions of the writing circuit and/or the bulk voltage responsive to the selected step increment.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: August 31, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Mo Kim, Jae-Yong Jeong, Chi-Weon Yoon
  • Publication number: 20090003075
    Abstract: A flash memory device includes a flash memory cell array having flash memory cells arranged with word and bit lines, a word line driver circuit configured to drive the word lines at a selected step increment during a programming operation, a bulk-voltage supply circuit configured to supply a bulk voltage into a bulk of the flash memory cell array and a writing circuit configured to drive the bit lines selected by conditions during a programming operation. A control logic block is configured to control the writing circuit and the bulk-voltage supply circuit during the programming operation. The control logic block is configured to cause the writing circuit and/or the bulk-voltage supply circuit to change at least one of the conditions of the writing circuit and/or the bulk voltage responsive to the selected step increment.
    Type: Application
    Filed: June 6, 2008
    Publication date: January 1, 2009
    Inventors: In-Mo Kim, Jae-Yong Jeong, Chi-Weon Yoon