Abstract: A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.

Abstract: The present invention relates to a nitride semiconductor light emitting device having a rectangular top view in which n-electrode and p-electrode structure is appropriately formed to improve propagation of currents and enhance luminance. The light emitting device includes an n-type nitride semiconductor layer formed on a substrate, and an n-electrode including an n-side bonding pad and a finger-type n-electrode extending away from the n-side bonding pad. The device further includes a mesa structure including an active layer and a p-type nitride semiconductor layer deposited in their order, an ohmic contact layer formed on a substantially entire upper surface of the mesa structure, and a p-electrode including a p-side bonding pad and a finger-type p-electrode extending away from the p-side bonding pad.

Abstract: Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.

Abstract: A gallium nitride-based light emitting device, and a method for manufacturing the same are provided. The light emitting device comprises a substrate; a main GaN-based LED including a first p-side electrode and a first n-side electrode, the main GaN-based LED formed in a first region on the substrate; and an ESD protecting GaN-based LED including a second p-side electrode and a second n-side electrode, the ESD protecting GaN-based LED formed in a second region on the substrate. The first region is separated from the second region by a device isolation region. The first p-side and n-side electrodes are electrically connected to the second n-side and p-side electrodes, respectively.

Abstract: Disclosed herein is a submount to mount a light emitting diode in a flipchip-structured light emitting device. The submount including a transistor to mount a nitride semiconductor light emitting diode in a flipchip-structured light emitting device includes: a substrate made of a first conductive semiconductor material; a first region formed on a partial area of the substrate, and made of a second conductive semiconductor material; a second region formed on the remaining regions other than the first region, and made of the second conductive semiconductor material; first and second electrodes formed on the first and second regions, respectively; and a conductive layer formed on the back of the substrate, wherein the first and second electrodes are connected to an n-type electrode and a p-type electrode of the nitride semiconductor light emitting diode through the use of a bump.

Abstract: The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.