Abstract: A protection IC includes a bias output terminal connected to a back gate of a MOS transistor, a load side terminal connected to a power supply path between a load and the MOS transistor, a load side switch inserted in an electric current path connecting the bias output terminal and the load side terminal, and a control circuit configured to control the load side switch based on a state of a secondary battery and thereby cause a back gate control signal for controlling a voltage of the back gate to be output from the bias output terminal. The load side switch is formed on an N-type silicon substrate and includes at least two NMOS transistors whose drains are connected to each other, and the control circuit is configured to simultaneously turn on or turn off the two NMOS transistors based on the state of the secondary battery.

Abstract: Provided are an encoding system using motion estimation and an encoding method using motion estimation for achieving high-speed motion estimation according to a multi-processing unit. The encoding system using motion estimation, comprises a multi-processing unit calculating motion estimation on many macroblocks of an input image, a motion estimator estimating motion vectors of the macroblocks of the input image using the motion estimation on the plurality of macroblocks, previously calculated by the multi-processing unit, and an encoder encoding the image based on the motion vectors of the macroblocks, estimated by the motion estimator. According to the present invention, motion estimation to be used for motion estimation can be calculated in advance according to the multi-processing unit capable of processing high-speed parallel processing to reduce an image encoding time and improve an encoding speed.

Abstract: Provided is a pressure sensor apparatus including a lead frame, a pressure sensing element mounted on the lead frame to measure a relative pressure between a first part and a second part, and a housing including a reference medium inlet hole to apply a pressure of a reference medium to the first part, and including a target medium inlet hole to apply a pressure of a target medium to the second part, wherein the reference medium inlet hole is provided in a first surface of the housing, wherein the target medium inlet hole is provided in a second surface of the housing other than the first surface, and wherein the lead frame includes one or more insertion terminals configured to be inserted into and electrically connected to terminal holes of a wire connector.

Abstract: Described herein are crystalline forms of a compound of formula (II?), including toluene solvates off A TD-CLE, as well as processes for the preparation thereof and use thereof in the preparation of cephalosporin compounds such as ceftolozane. Provided herein is a crystalline form of a compound of formula (II?): wherein X is CI, Br, or I; and R1 and R2 are each independently an oxygen protecting group; processes for making the crystalline form, and use of said form in the synthesis of antibacterial cephalosporins such as ceftolozane.

Abstract: A circuit modeling system includes a store a first net list. The first net list includes a plurality of semiconductor devices, a first power distribution network (PDN) connected to the plurality of semiconductor devices, and a signal network connected to the plurality of semiconductor devices that transmits signals to the plurality of semiconductor devices. A circuit simulation unit is configured to identify first semiconductor devices and second semiconductor devices from among the plurality of semiconductor devices. The first semiconductor devices are activated by receiving a signal through the signal network, and the second semiconductor devices are inactive. The circuit simulation unit is configured to reduce the first PDN to a second PDN based on the identified first semiconductor devices, and to generate a second net list including the signal network, the second PDN, and the first semiconductor devices.

Abstract: The present invention relates to a plated steel sheet for hot press forming, a hot-press forming member manufactured using the same, and a manufacturing method thereof. The plated steel sheet comprises: a base steel sheet and a composite plated layer that is formed on at least one surface of the base steel sheet, and has a Mn-based plated layer and an Al-based plated layer alternately formed therein, an Al-based plated layer being formed on the uppermost layer thereof, wherein the composite plated layer has a total thickness of 5 to 30 ?m, and in this case, the Mn-based plated layer accounts for 5 to 60% of the total thickness.

Abstract: Provided is a high-manganese hot-dip aluminum-coated steel sheet comprising: a base steel sheet containing, by weight, 5% to 35% of Mn, 0.3 to 6% of Al, 0.1 to 1.2% of Si, the balanced amount of Fe, and inevitable impurities; a hot-dip aluminum-coated layer, formed on a surface of the base steel sheet, containing, by weight, 3 to 12% of Si and the balanced amount of Al, and inevitable impurities; and an alloy layer, 0.1 to 10 ?m in thickness with a Fe—Al—Si—Mn-based alloy phase on an interface between the base steel sheet and the hot-dip aluminum-coated layer, containing, by weight, 40 to 70% of Al, 2 to 13% of Si, 3 to 9% of Mn, the balance amount of Fe, and inevitable impurities.

Abstract: Provided are a hot press-formed article and a method for manufacturing the same. The article is manufactured by hot press forming a galvanized steel sheet comprising a base steel plate and a zinc-based coat layer formed on a surface of the base steel plate, wherein the zinc-based coat layer contains at least one element selected from the group consisting of Sb, Sn, and Bi in a total amount of 0.05% to 2.0% by weight, and a balanced amount of Zn and inevitable impurities, at least 70% by weight of the at least one element selected from the group consisting of Sb, Sn, Bi being concentrated in a region 3 ?m or less distant from the surface of an alloyed zinc-based coat layer, formed by alloying the zinc-based coat layer, of the hot press-formed article.

Abstract: Disclosed is a method for operating an application providing a group call service using mobile voice over internet protocol (mVoIP). According to one embodiment, a request signal for a group call is received, and regardless of participation in the corresponding the group call, meta information for the group chat room corresponding to the group call can be received from a server. The meta information can comprise at least the group call connection status for each member of the group chat room.

Abstract: Provided are a pressure sensor device and a method of manufacturing the same. The pressure sensor device includes a housing including an air inlet and a fluid inlet provided in different directions, a substrate provided in an inner space of the housing and including a through-hole through which the air passes, and a pressure sensor chip mounted on the substrate to cover the through-hole in such a manner that a pressure of a fluid flowing in from the fluid inlet is applied to a top surface thereof and a bottom surface thereof is exposed to the air through the through-hole, in order to measure the pressure of the fluid relative to a pressure of the air, wherein the inner space is divided into an upper region and a lower region with respect to the substrate, and wherein the upper region is divided into a first inner region in which the pressure sensor chip is provided and a second inner region through which the air passes.

Abstract: Provided is a hot press formed product, which is prepared by means of hot press forming of a Zn—Al—Mg-based plated steel material comprising base iron and a Zn—Al—Mg-based plated layer, and a method for preparing the same, the hot press formed product comprising an oxide layer formed on the surface thereof, wherein the content ratio of Al to Mg (Al/Mg) in the oxide layer is 0.8 or more.

Abstract: Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.

Abstract: A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered with an insulating film in other regions and projected to penetrate the second conductivity type body, and a source electrode including a first region situated on a top of the insulating layer and a second region in contact with the first conductivity type doping layer by penetrating the insulating layer.

Abstract: A membrane welding device guide system according to the present invention comprises: an anchor strip arranged on an insulation wall which configures an insulation system of a liquefied gas storage tank; a stud integrally formed with the anchor strip, the center of the stud deviating from a welding line of the anchor strip; and a guide rail which is coupled to the stud to form a path of an automatic membrane welding device for welding a membrane to be stacked on the insulation wall. Therefore, the present invention allows membrane welding to be easily performed and allows a membrane welding device to be stably guided.

Abstract: Disclosed are a latch circuit receiving a negative output of a next stage latch circuit as a feedback input, a double data rate (DDR) ring counter based on the latch circuit to perform DDR counting of pulse periods and reduce the number of toggles, a hybrid counting device counting lower-bit portion by using the latch-based DDR ring counter and upper-bit portion by using a binary counter, and an analog-to-digital converting device and a CMOS image sensor employing the hybrid counting device. A double data rate ring counter may include a plurality of latches coupled in a ring type. The plurality of latches may include positive-edge-triggered latches and negative-edge-triggered latches arranged alternately. A current stage latch receives an output of a previous latch stage to shift to a next latch stage according to a counter clock, receives an output of the next latch stage to check a data shift to the next latch stage, and falls to a low level if the data shift is checked.

Abstract: A power amplifier includes an amplifying circuit configured to amplify an input signal and comprising transistors, which may be disposed in parallel with one another and divided into a first group of transistors and a second group of transistors. The power amplifier also includes a bias circuit configured to supply bias power to one of the transistors of the first group and the transistors of the second group.

Abstract: A count circuit includes a count block suitable for generating count code signals for a predetermined count period including a first period and a second period; and a storage block suitable for storing first bit signals among a plurality of bit signals included in the count code signals, for the first period, and storing remaining bit signals among the plurality of bit signals for the second period.

Abstract: A secondary battery protection circuit includes a first terminal connected to a power supply path between a secondary battery and a MOS transistor, a second terminal connected to the power supply path between a load and the MOS transistor, a third terminal connected to a gate of the MOS transistor, a fourth terminal connected to a back gate of the MOS transistor, a control circuit that outputs a switch control signal based on a detected abnormal state of the secondary battery, and a switch control circuit including a first switch for connecting the fourth terminal with the first terminal and a second switch for connecting the fourth terminal with the second terminal. At least one of the resistance between the fourth terminal and the first terminal and the resistance between the fourth terminal and the second terminal is greater than the on resistance value of the MOS transistor.

Abstract: An item recommendation method and apparatus are provided. The item recommendation method and apparatus may recognize items preferred before a user uses items, based on items rated by the user, and may recommend an item to the user based on preferences for the recognized items.