Patents by Inventor In Seok Jeong

In Seok Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • On die thermal sensor of semiconductor memory device and method thereof
    Patent number: 7451053
    Abstract: An on die thermal sensor (ODTS) includes a thermal sensor for outputting a first comparing voltage by detecting a temperature of the semiconductor memory device; a comparing unit for outputting a trimming code by comparing the first comparing voltage with a second comparing voltage and increasing or decreasing a preset digital code in response to the comparing result; and a voltage level adjusting unit for adjusting a voltage level of the second comparing voltage by determining a maximum variation voltage and a minimum variation voltage based on the trimming code and a temperature control code.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: November 11, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventor: Chun-Seok Jeong
  • DEVICE AND METHOD FOR MANAGING TIME INFORMATION
    Publication number: 20080247276
    Abstract: Disclosed is a device and method for managing time information in a mobile communication terminal. To this end, the present invention provides a plan in which time information of a terminal can be automatically set with the local time of a corresponding time zone as a reference in accordance with a user's selection in a communication network, and a schedule can be exchanged with the universal time as a reference when it is necessary to share the schedule containing time information between terminals in different time zones.
    Type: Application
    Filed: June 17, 2008
    Publication date: October 9, 2008
    Applicant: SAMSUNG ELECTRONICS, INC.
    Inventors: Yang-Seok JEONG, Ki-Tae Lee, Ok-Hyeon Kim
  • EASY-TO-INSTALL DOOR LOCK STRUCTURE
    Publication number: 20080216526
    Abstract: The present invention relates to a door lock structure including: an inner fixing plate having a protruding ring adapted to rotatably receive one end of the inner lever; an inner mounting plate adapted to abut against one surface of the inner fixing plate; an outer fixing plate having a center hole adapted to rotatably receive one end of the outer lever and a plurality of protruding portions extending circumferentially from the center hole; an outer mounting plate adapted to abut against one side of the outer fixing plate and having a plurality of through-holes formed along the circumferential direction thereof; and elastic means adapted to provide a given elastic force so as to allow the inner lever and the outer lever to be returned to their original positions.
    Type: Application
    Filed: March 7, 2008
    Publication date: September 11, 2008
    Applicant: SEWANG TECH CO., LTD
    Inventor: Joo Seok JEONG
  • METHOD FOR DRIVING PLASMA DISPLAY PANEL
    Publication number: 20080218442
    Abstract: A method for driving a plasma display panel including a plurality of pixels, a plurality of first electrode lines, a plurality second electrode lines, and a plurality of third electrode lines crossing the first electrode lines and the second electrode lines, and being driven by dividing a frame into a plurality of subfields, each subfield including a reset period, an address period and a sustain discharge period, the method including: applying a first pre-address signal to a first group of third electrode lines among the plurality of third electrode lines in a pre-address period, the pre-address period being between the reset period and the address period in at least one of the subfields; and applying a second pre-address signal to at least a second group of third electrode lines among the plurality of third electrode lines in the pre-address period.
    Type: Application
    Filed: March 5, 2008
    Publication date: September 11, 2008
    Inventors: Jae-Seok Jeong, Myoung-Kwan Kim
  • IMPEDANCE MATCHING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME
    Publication number: 20080211534
    Abstract: An impedance matching circuit of a semiconductor memory device performs a ZQ calibration with initial values that reflect an offset error according to variations in a manufacturing process. The impedance matching circuit includes a first pull-down resistance unit, a first pull-up resistance unit, and a code generation unit. The first pull-down resistance unit supplies a ground voltage to a first node, thereby determining an initial pull-down code. The first pull-up resistance unit supplies a supply voltage to the first node, thereby determining an initial pull-up code or a voltage level on the first node. The code generation unit generates pull-down and pull-up calibration codes using the initial pull-down and pull-up codes as respective initial values.
    Type: Application
    Filed: December 31, 2007
    Publication date: September 4, 2008
    Applicant: Hynix Semiconductor Inc.
    Inventors: Chun-Seok JEONG, Jae-Jin Lee
  • IMPEDANCE MATCHING CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE WITH THE SAME
    Publication number: 20080211533
    Abstract: An impedance matching circuit includes a code generating unit for generating a calibration code in response to a reference voltage and a voltage on a node, a calibration resistance unit for supplying a power supply voltage to the node, being calibrated to an external resistor, wherein the calibration resistance unit includes a switching unit for turning on/off a plurality of resistors connected in parallel in response to the calibration code, a termination pull-up resistance unit provided at an output node for receiving the calibration code, wherein the termination pull-up resistance unit has a switching unit which is identical to that of the calibration resistance unit, and a termination pull-down resistance unit at the output node, for receiving the calibration code, wherein the termination pull-down resistance unit has a switching unit which is identical to that of the calibration resistance unit.
    Type: Application
    Filed: December 31, 2007
    Publication date: September 4, 2008
    Applicant: Hynix Semiconductor Inc.
    Inventors: Ki-Ho KIM, Chun-Seok Jeong
  • DATA STORAGE DEVICE AND METHOD OF OPERATING THE SAME
    Publication number: 20080201539
    Abstract: A data storage device and a method of operating the same include firmware recognizing that the data storage device has a smaller than normal capacity or includes a routine in the firmware when the number of bad blocks exceeds the maximum. Therefore, even if the number of bad blocks exceeds the maximum, the data storage device having a capacity smaller than the normal capacity can be used.
    Type: Application
    Filed: February 14, 2008
    Publication date: August 21, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Seok-jeong NAM
  • Analog-digital converter and on-die thermal sensor including the same
    Publication number: 20080180300
    Abstract: An on-die thermal sensor includes an integrating analog-digital converter not requiring a negative reference voltage input. The on die thermal sensor includes a band gap unit, an integrating unit and a counting unit. The band gap unit senses a temperature to output a first voltage corresponding to the sensed temperature. The integrating unit integrates a difference between a reference voltage and a comparing voltage to output a second voltage wherein the comparing voltage has a voltage level higher than that of the reference voltage. The counting unit counts clocks of a clock signal input thereto until the second voltage reaches the first voltage, thereby outputting a thermal code corresponding to the voltage level of the first voltage.
    Type: Application
    Filed: June 29, 2007
    Publication date: July 31, 2008
    Inventors: Chun-Seok Jeong, Jae-Jin Lee, Joong-Sik Kih, Jong-Man Im, Jae-Woong Choi, Myoung-Jun Chai, Kae-Dal Kwack
  • Composition for forming electron emission sources, method of manufacturing the same, and electron emission sources and electron emission device manufactured using the method
    Publication number: 20080174229
    Abstract: An electron emission device includes a base substrate, first electrodes on the base substrate, second electrodes electrically insulated from the first electrodes, a first insulation layer between the first electrodes and the second electrodes, electron emission source holes formed in the first insulation layer and the second electrodes to expose the first electrodes, and electron emission sources in the electron emission source holes, each electron emission source including at least one electron emission material and at least one catalyst metal nano particle.
    Type: Application
    Filed: April 27, 2007
    Publication date: July 24, 2008
    Inventor: Kwang-Seok Jeong
  • Blood Pump Actuator And A Blood Pump System Thereof
    Publication number: 20080161637
    Abstract: A blood pump actuator to generate a driving force for driving a blood pump is disclosed. The blood pump actuator includes: a motor unit having a stator and a rotor, and rotating to generate a rotating force; a cam unit to convert the rotating motion of the motor unit into a rectilinear reciprocating motion; and a bellows unit having a bellows, which is expandable and contractible and contains a fluid therein, and an upper bellows plate and a lower bellows plate respectively attached to the upper and lower ends of the bellows, wherein the lower bellows plate moves upwards and downwards in a vertical direction according to the rectilinear reciprocating motion of the cam unit engaging with the lower bellows plate, and the bellows repeatedly expands and contracts according to the vertical movement of the lower bellows plate.
    Type: Application
    Filed: October 20, 2005
    Publication date: July 3, 2008
    Inventors: Kyung Sun, Kyu Back Lee, Yong Doo Park, Ho Sung Son, Chang Mo Hwang, Gi Seok Jeong
  • Semiconductor memory device and method for driving the same
    Publication number: 20080159038
    Abstract: A semiconductor memory device performs a refresh operation stably even while a temperature continuously changes at near a specific temperature. The semiconductor memory device includes an on die thermal sensor (ODTS) and a control signal generator. The on die thermal sensor (ODTS) outputs a thermal code corresponding to a temperature of the semiconductor memory device. The control signal generator generates a self refresh control signal in response to the thermal code, wherein a state of the self refresh control signal does not change when the temperature variation is less than a predetermined value.
    Type: Application
    Filed: June 29, 2007
    Publication date: July 3, 2008
    Inventors: Chun-Seok Jeong, Kee-Teok Park
  • On die thermal sensor and method for generating thermal code of ODTS
    Publication number: 20080158036
    Abstract: An on die thermal sensor (ODTS) in a memory device includes: a band gap unit for detecting a temperature of the memory device to output a first voltage corresponding to the temperature; and an analog-to-digital converting unit for outputting a digital code having temperature information based on the first voltage, the digital code having varied resolution according to temperature ranges.
    Type: Application
    Filed: December 31, 2007
    Publication date: July 3, 2008
    Inventor: Chun-Seok Jeong
  • Lateral flow quantitative assay method and strip and laser-induced fluorescence detection device therefor
    Patent number: 7371582
    Abstract: Disclosed is a lateral flow quantitative assay method which can measure one or more analyte species at the same time, with high sensitivity. Also, the present invention relates to a strip which can measure one or more analyte species at the same time, with high sensitivity and a package in which the strip is integrated with a laser-induced surface fluorescence detector. The present invention can quantify multiple analytes with a minimum detection limit of pg/ml. Therefore, the present invention provides an advantage capable of quantifying a plurality of analytes at the same time using a simple lateral flow assay strip.
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: May 13, 2008
    Assignee: Boditechmed Inc.
    Inventors: Kie-Bong Nahm, Eui-Yeol Choi, Dong-Seok Jeong, Jin-Ha Jung, Joung-Dae Moon, Young-Min Kim, Keun-Woo Lee, Jae-Soon Ahn, Young-Eui Jeong, Sang-Yeol Park, Hyun-Mi Kim, Byung-Ryong Lee
  • Semiconductor memory device having on die thermal sensor
    Publication number: 20080106321
    Abstract: A semiconductor memory device includes: a temperature information output unit for measuring an internal temperature of the semiconductor memory device, and generating a plurality of flag signals, each voltage level of which varies according to the measured internal temperature; a self-refresh oscillation unit for providing a self-refresh period corresponding to the measured internal temperature in response to the plurality of flag signals; and a temperature information control unit for determining a measuring period of the temperature information output unit in response to a temperature sensing enable signal and the plurality of flag signals.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 8, 2008
    Inventors: Chun-Seok Jeong, Kee-Teok Park
  • On die thermal sensor having analog-to-digital converter for use in semiconductor memory device
    Publication number: 20080106451
    Abstract: An On Die Thermal Sensor (ODTS) of a semiconductor memory device includes: a temperature detector for detecting an internal temperature of the semiconductor memory device to generate a temperature voltage corresponding to the detected internal temperature; a tracking ADC for outputting a digital code by comparing the temperature voltage with a tracking voltage and performing a counting operation to the result of comparison; and an operation controller for controlling operations of the temperature detector and the analog-to-digital converter, wherein the tracking ADC performs the counting operation using a first tracking scheme having a relatively large unit variation width of the digital code value during an initial tracking period and a second tracking scheme having a relatively small unit variation width of the digital code value after the initial tracking period.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 8, 2008
    Inventors: Chun-Seok Jeong, Jae-Jin Lee
  • Plasma display and driving method thereof
    Publication number: 20080106499
    Abstract: A plasma display device (PDP) and method of driving it (during an address period) are provided. Such a PDP has an address electrode for receiving an address pulse and a capacitor. Such an address pulse has states including a first voltage and a smaller second voltage smaller. Such a capacitor stores a third voltage that is between the first and third voltages. Such a method includes: coupling the capacitor to the address electrode via the inductor; firstly energizing, via the inductor, the address electrode with the third voltage stored in the capacitor; secondly energizing the address electrode with the first voltage; thirdly energizing, via the inductor, the capacitor with voltage on the address electrode; and fourthly energizing the address electrode with the second voltage. Real power transfer during the first and third energizations is facilitated via reactive power transfer arising from LC resonance.
    Type: Application
    Filed: October 25, 2007
    Publication date: May 8, 2008
    Inventors: Myoung-Kwan Kim, Jae-Seok Jeong
  • On die thermal sensor in semiconductor memory device
    Publication number: 20080106322
    Abstract: An on die thermal sensor in a semiconductor memory device includes: a reference voltage generating unit for generating a band gap voltage and generating a reference voltage by using the base band gap voltage; a voltage amplifying unit for outputting a temperature voltage by amplifying the band gap voltage; and a temperature information code generating unit for generating a temperature information code corresponding to a voltage level of the temperature voltage, wherein voltage variation of the temperature voltage is amplified as much as a preset amplifying value and a maximum voltage level of the temperature voltage is maintained lower than that of a power supply voltage used in the semiconductor memory device.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 8, 2008
    Inventor: Chun-Seok Jeong
  • Clock data recovery apparatus
    Publication number: 20080101524
    Abstract: A clock data recovery apparatus includes a phase looked loop unit, a voltage control delay line, a phase detection unit, a charge pump unit, and a loop filter unit. The phase looked loop unit outputs a plurality of clock signals which are different from each other in phase and of which frequency is lower than that of data. The voltage control delay line outputs recovered clock signals by delaying the clock signals according to input voltage levels. The phase detection unit outputs recovered data in synchronization with the clock signals, respectively and outputs increment and decrement signals which have wider pulse width than the data by comparing the recovered clock signals with the data. The charge pump unit outputs a corresponding current in response to the increment and decrement signals. The loop filter unit determines an amount of delay in the voltage control delay line by outputting the voltage.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 1, 2008
    Inventors: Chun-Seok Jeong, Jae-Jin Lee, Chang-Sik Yoo, Jung-June Park, Young-Suk Seo
  • Impedance matching circuit of semiconductor memory device
    Publication number: 20080100333
    Abstract: An impedance matching circuit reduces current consumption during ZQ calibration in the present invention. The impedance matching circuit includes a reference voltage generator, a code generator, a first pull-up resistance unit, a second pull-up resistance unit and a pull-down resistance unit. The reference voltage generator generates a reference voltage. The code generator generates a pull-up calibration code by comparing the reference voltage with a voltage at a first node and a pull-down calibration code by comparing the reference voltage with a voltage at a second node. The first pull-up resistance unit calibrates its resistance to be bigger than a reference resistance. The second pull-up resistance unit calibrates its resistance to be bigger than the reference resistance. The pull-down resistance unit calibrates its resistance to the reference resistance.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 1, 2008
    Inventors: Ki-Ho Kim, Chun-Seok Jeong
  • Circuit and method of outputting temperature data of semiconductor memory apparatus
    Publication number: 20080091378
    Abstract: A circuit for outputting temperature data of a semiconductor memory apparatus includes a temperature detecting circuit that generates a temperature voltage corresponding to a change in temperature and outputs the temperature voltage, an A/D converter that converts the temperature voltage into a first temperature code and outputs it, and a temperature data correcting unit that outputs a second temperature code obtained by correcting an error of the first temperature code using a correction code.
    Type: Application
    Filed: June 27, 2007
    Publication date: April 17, 2008
    Applicant: Hynix Semiconductor Inc.
    Inventors: Chun-Seok Jeong, Kang-Seol Lee