Abstract: The present disclosure provides a data assimilation system of numerical models using atmospheric research aircraft observation data for constructing a data assimilation system for generating improved initial conditions and performing efficient aerial observation work using atmospheric research aircraft observation data, and a method of constructing a weather prediction model with data assimilation applied of the data assimilation system. A data assimilation system of numerical models using atmospheric research aircraft observation data includes an observation error data generation module, a background error covariance generation module, a data assimilation module and a lateral boundary field generation module.

Abstract: Disclosed are a memory device and a manufacturing method thereof. The disclosed memory device may include a first substrate structure including a plurality of sense amplifiers (S/A) and a peripheral circuit unit, a second substrate structure bonded to a first surface side of the first substrate structure and including a first cell block including a plurality of first memory cells and a plurality of first bit lines, and a third substrate structure bonded to a second surface side of the first substrate structure and including a second cell block including a plurality of second memory cells and a plurality of second bit lines, wherein each of the plurality of first bit lines and each of the plurality of second bit lines may be commonly connected to each of the plurality of sense amplifiers (S/A).

Abstract: The present disclosure discloses a capacitorless 3D DRAM device including a write bit line extending in a vertical direction, a write word line extending in a horizontal direction, a write transistor connected to the write bit line and the write word line, and defined to include a first channel material layer, a first gate insulating layer, and a portion of the write word line, a read bit line extending in the vertical direction, a read word line extending in the horizontal direction, and a read transistor connected to the read bit line and the read word line.

Abstract: A walk-in device for a vehicle seat includes a rear link having one end connected to a seat cushion frame by a first hinge shaft, and the other end connected to an upper rail by a second hinge shaft, the rear link being capable of rotating in an unlocking direction about the second hinge shaft, and an unlocking device configured such that at least one bracket, which operates in conjunction with a rotational operation of the rear link, presses a locking pin in a state in which the bracket is elastically supported by an elastic member, such that an unlocked state is implemented.

Abstract: A node for a lower structure of an offshore wind power generator according to an embodiment of the present invention relates to a node for a lower structure of an offshore wind power generator, which is manufactured by a casting method, the node including a body part into which a main pipe is inserted, a support part which is formed to be branched from the body part at a predetermined angle with respect to a height direction and into which a branch pipe is inserted, and a reinforcement part that protrudes from the body part, forms a predetermined radius of curvature, and thus reinforces coupling between the body part and the support part.

Abstract: Various embodiments include systems and methods for continuous speech monitoring artificial intelligence solutions. A low-power always-on listening module (LPALM) may maintain continuous auditory awareness or alertness without consuming an excessive amount of the processing, memory, or battery resources of the user computing system or device. As such, the LPALM may operate on the computing device for an extended period of time without depleting the device's battery resources, rendering the user device non-responsive, or otherwise having a negative or user-perceivable impact on the performance, functionality, or power consumption characteristics of the user device.

Abstract: A apparatus for manufacturing a display device includes: a stage for supporting a display module including a display panel, a cover window, and a flexible printed circuit board; and an adsorption unit disposed at one side of the stage, the adsorption unit configured to be moved in a horizontal direction such that a distance between the stage and the adsorption unit is adjusted, wherein the adsorption unit is configured to adsorb and support the flexible printed circuit board connected to the display panel.

Abstract: A display device is provided. A display device including a plurality of light-output areas through which incident light is emitted and a light-blocking area which blocks the incident light, the display device includes a substrate, a bank layer which is disposed in the light-blocking area on the substrate and defines a plurality of openings, each of which is disposed in one of the plurality of light-output areas, and a color control pattern disposed in the opening of the bank layer, wherein the bank layer includes a first bank area which has a first thickness and defines the plurality of openings and a second bank area which is disposed between the plurality of openings and has a second thickness smaller than the first thickness.

Abstract: The present disclosure discloses a manufacturing method of a memory device including forming a structure including an epitaxial material plug extending in a vertical direction on a substrate, an epitaxial channel material layer extending in a horizontal direction from a side surface of the epitaxial material plug, and a gate insulating material layer formed on at least a surface portion of the epitaxial channel material layer.

Abstract: The present disclosure discloses a manufacturing method including forming a stack including a first insulating layer, and a first sacrificial layer and a second insulating layer which are sequentially stacked on the first insulating layer; forming a patterned stack including at least one pattern portion having a first sacrificial layer obtained from the first sacrificial layer by patterning the stack; forming a structure including the patterned stack and the insulating material by filling empty spaces on both sides of the at least one pattern portion with an insulating material; forming a first vertical hole penetrating through the first sacrificial layer pattern of the pattern portion in the structure; forming a horizontal hole by removing the first sacrificial layer pattern exposed by the first vertical hole; and forming a gate insulating material layer on inner surfaces of the first vertical hole and the horizontal hole.

Abstract: A walk-in device for a vehicle seat includes a rear link having one end connected to a seat cushion frame by a first hinge shaft, and the other end connected to an upper rail by a second hinge shaft, and a pressing bracket configured to be pressed by the rear link.

Abstract: The present disclosure discloses a vertical stack-type memory device may including a word line extending in a horizontal direction and having a vertical through-hole region, a vertical bit line arranged vertically to pass through the through-hole region, a channel layer pattern arranged to surround the vertical bit line inside the through-hole region, a body insulating layer disposed between the vertical bit line and a remaining portion except for the one end of the channel layer pattern, an electrode member arranged to surround an outer peripheral surface of the channel layer pattern at a height higher than the word line, a dielectric layer pattern disposed between the word line and the channel layer pattern and having a structure surrounding the electrode member, and a plate electrode in contact with the dielectric layer pattern above the word line.

Abstract: The present disclosure discloses a manufacturing method of a memory device including forming a structure including an epitaxial material plug extending vertically on a substrate, an epitaxial material layer extending horizontally from a side surface of the epitaxial material plug, and a gate insulating material layer formed at least on a surface of the epitaxial material layer, defining a transistor including a word line by forming the word line in contact with the gate insulating material layer in a transistor formation region around the epitaxial material plug in the structure, removing the epitaxial material layer and the gate insulating material layer from a capacitor formation region adjacent to the transistor formation region of the structure, and forming a capacitor connected to one end of the epitaxial material layer corresponding to a channel of the transistor.

Abstract: Provided are a pixel circuit and a display device having the pixel circuit. The pixel circuit includes an organic light emitting diode, a switching transistor, a storage capacitor, and a driving transistor. The switching transistor is turned off when a scan signal has a first voltage and turned on when the scan signal has a second voltage. The storage capacitor stores a data voltage when the switching transistor is turned on in response to the scan signal. The driving transistor is electrically connected with the organic light emitting diode between a high power supply voltage and a low power supply voltage to provide a driving current to the organic light emitting diode, and includes a first bottom gate electrode that is provided with the first voltage. The driving current corresponds to the data voltage stored in the storage capacitor.

Abstract: The present invention relates to a transparent anode active material having excellent light transmittance and electrical conductivity characteristics and a manufacturing method thereof, and a lithium ion battery and an all-solid-state lithium thin-film battery based on the same and having excellent charge/discharge capacity and charge/discharge rate, wherein the transparent anode active material according to the present invention is characterized by comprising a material of the following Chemical Formula 1: AgxSiOyN wherein x is 0<x?0.8 and y is 0<y?1.

Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

Abstract: A method and a device for detecting the position of an object are disclosed. According to an embodiment of the present disclosure, the method for detecting the position of an object includes: detecting a position of the object in a sensing zone, which is divided into multiple divided sensing zones along one direction, by causing multiple light-emitting elements disposed along the one direction to emit light sequentially along the one direction and measuring an intensity and a reception time point of a reflected signal by using a light-receiving element; and reflecting and displaying the detected position of the object on a display screen.

Abstract: The present invention relates to a transmembrane domain derived from human LRRC24 protein. More specifically, the present invention relates to a transmembrane domain derived from the human LRRC24 protein (LRRC24P transmembrane domain) or a cell-penetrating peptide, and an intracellular delivery system comprising same. The transmembrane domain derived from the human LRRC24 protein of the present invention can be used to deliver cargo materials such as compounds, biomolecules, and various polymer materials into cells. Since the LRRC24P transmembrane domain of the present invention exhibits higher cell penetration efficiency compared to conventional cell-penetrating peptides and is derived from human proteins, thus avoiding side effects and immune responses caused by peptides derived from foreign proteins, it can be usefully used as an effective intracellular delivery method for compounds, biomolecules, and various polymer materials applied to the human body.

Abstract: The present disclosure discloses a capacitorless three-dimensional stacked DRAM device including a plurality of memory cell structures spaced apart from each other in horizontal and vertical directions, each of the plurality of memory cell structures including a horizontal read transistor structure and a horizontal write transistor structure, a plurality of write bit lines connected to the plurality of write transistor structures of the plurality of memory cell structures and extending in the horizontal direction, a plurality of read bit lines connected to the plurality of read transistor structures of the plurality of memory cell structures and extending in the horizontal direction, a plurality of write word lines connected to the plurality of write transistor structures and extending in the vertical direction, and a plurality of read word lines connected to the plurality of read transistor structures and extending in the vertical direction.

Abstract: Disclosed is a crossbar array device applicable to graph data analysis including a plurality of word lines extending in a first direction; a plurality of bit lines extending in a second direction intersecting the plurality of word lines; a plurality of conductor cells disposed in intersection regions corresponding to a diagonal among a plurality of intersection regions defined between the plurality of word lines and the plurality of bit lines; and a plurality of rectifying resistance change cells disposed in remaining intersection regions excluding the diagonal among the plurality of intersection regions, having a rectifying characteristic and storing a changeable resistance state.