Abstract: Provided herein is a method for forming a transparent electrode film, the method comprising forming an electrode pattern by printing an electrode pattern on a release film using a metal ink composition; forming an insulating layer by applying a curable resin on the release film on which the electrode pattern has been formed; forming a substrate layer by laminating a substrate on the insulating layer; removing the release film; and forming a conductive layer by applying a conductive material on the electrode pattern from which the release film has been removed.

Abstract: Provided herein is a method for producing a hybrid transparent electrode, the method including filling grooves of a substrate with a conductive metal ink composition; filling the grooves with residue conductive metal ink composition that remains on a surface of the substrate as the grooves are being filled with the conductive metal ink composition to form an electrode pattern; and forming a conductive layer including a conductive material on the electrode pattern.

Abstract: Provided herein is a method for forming a transparent electrode film, the method comprising forming an electrode pattern by printing an electrode pattern on a release film using a metal ink composition; forming an insulating layer by applying a curable resin on the release film on which the electrode pattern has been formed; forming a substrate layer by laminating a substrate on the insulating layer; removing the release film; and forming a conductive layer by applying a conductive material on the electrode pattern from which the release film has been removed.

Abstract: Provided herein is a method for producing a hybrid transparent electrode, the method including filling grooves of a substrate with a conductive metal ink composition; filling the grooves with residue conductive metal ink composition that remains on a surface of the substrate as the grooves are being filled with the conductive metal ink composition to form an electrode pattern; and forming a conductive layer including a conductive material on the electrode pattern.

Abstract: A ferroelectric memory having a dielectric layer comprised of SiOF, and a method for fabricating the SiOF dielectric layer are provided. Degradation in the ferroelectric properties due to hydrogen atoms can be prevented by depositing a SiOF dielectric layer using SiF4, instead of depositing a SiO2 dielectric layer, which has been conventionally used. The ferroelectric memory device, and the method of making the device, provide a stabilized device having less or no degradation in the ferroelectric properties.